Hwa-Mok Kim

Dongguk University

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Tae Won Kang

Kunsan National University

Kwan Soo Chung

Seoul National University

Tae-Won Kang

Dongguk University

Jae-Hyeon Leem

Korea Institute of Science and Technology

Hosang Lee

Pukyong National University

Sung Ryong Ryu

Korea Institute of Radiological and Medical Sciences

Suk Il Kim

Dongguk University

Deuk Young Kim

Dongguk University

Yong‐Hoon Cho

Korea Advanced Institute of Science and Technology

Keun‐Ho Auh

Hanyang University

Cooperative Institutions

Dongguk University

Hanyang University

Government of the Republic of Korea

Chungbuk National University

Seoul National University

Samsung (South Korea)

Korea Advanced Institute of Science and Technology

Seoul Institute

Anyang University

Korea University

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Cathodoluminescence Characterization of GaN Thick Films Grown by Using the HVPE Method

Journal of the Korean Physical Society (2000)

Hwa-Mok Kim Jun-Sung Choi Oh Jae-Eung Yoo Tae-Kyung

Cathodoluminescence

Characterization

10.3938/jkps.37.956

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Citations (5)

Correlation between dielectric properties and strain in Pb0.5 Sr0.5TiO3 thin films prepared by using the sol–gel method

Surface and Coatings Technology (2004)

Kyoung-Tae Kim Chang-Il Kim Sung-Gap Lee Hwa-Mok Kim

Spin Coating

Dielectric loss

Alkoxide

10.1016/j.surfcoat.2004.03.023

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Citations (13)

Growth of Ferromagnetic Semiconducting Si:Mn Film by Vacuum Evaporation Method

Chemistry of Materials (2003)

Hwa-Mok Kim Nam Mee Kim Chang Soo Park Sh. U. Yuldashev Tae Won Kang

Three magnetization curves of Si0.93Mn0.07 film annealed at 973 K were taken at 5, 100, and 200 K after substraction of the diamagnetic contribution of the Si substrate. The coercive field decreases monotonically with increasing temperature. For our samples, the coercive fields, Hc, are 320, 150, and 70 Oe at 5, 100, and 200 K, respectively. Magnetization was measured up to 3 kOe without evidence of an increase of magnetization beyond the value acquired in 3 kOe. In this study, the saturation magnetizations, Ms, are 2.43, 1.78, and 0.67 emu/g at 5, 100, and 200 K, respectively. Hc and Ms were decreased with increasing measurement temperature.

Diamagnetism

Saturation (graph theory)

10.1021/cm034534l

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Citations (27)

Preparation of 30×30 mm² Free-Standing GaN Wafer by Mechanical Liftoff and Optical Properties in The Backside of The Free GaN by Cathodoluminescence

MRS Proceedings (2000)

Hwa-Mok Kim Jae‐Eung Oh Tae-Won Kang

Cathodoluminescence

10.1557/proc-639-g6.51

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Growth of GaN Nanorods on (0001) Sapphire Substrates by Hydride Vapor Phase Epitaxy

MRS Proceedings (2002)

Hwa-Mok Kim Doo Soo Kim Young Wook Chang Deuk Young Kim Tae Won Kang

Nanorod

Vapor phase

Rod

10.1557/proc-727-r8.3

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Growth and applications of HVPE-GaN nanorods

Metals and Materials International (2004)

Tae Won Kang Hwa-Mok Kim

Nanorod

Wide-bandgap semiconductor

Indium gallium nitride

10.1007/bf03185987

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Citations (6)

Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy

Journal of Applied Physics (2003)

Young S. Park H. S. Lee J. H. Na H. J. Kim Sang Man

In order to study the formation of polarization-induced two-dimensional electron gases (2DEGs), GaN/AlGaN/GaN heterostructures with different polarity were grown on sapphire (0001) substrates by plasma-assisted molecular-beam epitaxy. The polarity of GaN layers can be changed from the normal N-polarity to a Ga-polarity surface by inserting a thin Al metal layer prior to the growth of AlN buffer layer. The surface stability of each lattice polarity film was studied by in situ reflection high-energy electron diffraction. The polarity of the films and the location of 2DEGs in the heterostructure have been evaluated by investigating the carrier concentration profiles in the GaN/AlGaN/GaN heterostructures. A simple model to explain the polarity change by a thin Al metal layer is proposed.

Polarity (international relations)

Wide-bandgap semiconductor

10.1063/1.1581375

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Citations (23)

Ga0.97Mn0.03As epitaxial layers grown from Ga–Mn–As–Bi solutions by liquid-phase epitaxy

Materials Letters (2002)

Hwa-Mok Kim Jae-Hyeon Leem Tae-Won Kang

Liquid phase

10.1016/s0167-577x(01)00363-9

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Characteristics of Free-Standing GaN Substrates grown by Hydride Vapor Phase Epitaxy

Journal of the Institute of Electronics Engineers of Korea (2000)

Hwa-Mok Kim Jun-Seong Choe Oh Jae-Eung Tae-Gyeong Yu

Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 , a free-standing GaN with a size of 10 mm 10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.

Cathodoluminescence

Crystal (programming language)

Source

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Field Emission Properties of Needle Shaped GaN Nanorod Arrays

Journal of the Korean Physical Society (2004)

Hwa-Mok Kim Hosang Lee Suk Il Kim Sung Ryong Ryu Tae Won Kang

Nanorod

Source

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Citations (2)