J.I.B. Wilson

Alagappa University

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P. John

University of Reading

M. J. Tricker

Heriot-Watt University

Robert Rhodes Mather

Heriot-Watt University

Michael Thomas

Savannah River National Laboratory

J. McGill

Oak Ridge National Laboratory

I. M. Odeh

Jordan University of Science and Technology

Fiona Riddoch

Global Public Policy Institute

МV

М. Vasundhara

Academy of Scientific and Innovative Research

A. G. Fitzgerald

University of Dundee

J. L. DAVIDSON

Heriot-Watt University

Cooperative Institutions

Heriot-Watt University

University of Glasgow

University of Cambridge

Scottish Universities Physics Alliance

National Renewable Energy Laboratory

Heriot-Watt University Malaysia

University of Edinburgh

Office of Scientific and Technical Information

University of Birmingham

Cavendish Hospital

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Laser writing of high-purity gold lines

Applied Physics Letters (1989)

M.G. Jubber J.I.B. Wilson J. L. DAVIDSON P. A. Fernie P. John

Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 μΩ cm, comparable with bulk gold, were attained at a writing speed of 35 μm s−1 . The track profiles suggest that deposition is more rapid on the gold surface than on the SiO2 substrate.

10.1063/1.101585

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Citations (20)

Silicon CVD by Twin-Beam Processing

MRS Proceedings (1983)

T.D. Binnie M. J. Colles J.I.B. Wilson J. Hunter West

10.1557/proc-29-9

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Polypyrrole and enzyme free cholesterol flakes based composite: Selective determination of theophylline

Journal of Pharmaceutical and Biomedical Analysis (2021)

R. Ramya P. Thivya D. Nathiya J.I.B. Wilson

Polypyrrole

Differential pulse voltammetry

10.1016/j.jpba.2021.114065

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Citations (3)

Amorphous-silicon m.i.s. solar cells

IEE Journal on SolidState and Electron Devices (1978)

J.I.B. Wilson J. McGill

M.I.S. solar cells of amorphous silicon on stainless steel, with a top barrier contact of Ni/TiOx, have given 4.8% power conversion efficiency without an antireflection coating. The insulating layer, with an optimum thickness of ≈ 2nm, compensates for the low work function of nickel compared with platinum, and enables similar high open-circuit voltages (up to 680 mV) to be obtained. The fill factor is not appreciably degraded by the addition of an insulating layer, unless this is thicker than = 3 nm. Under illumination, the diode characteristics change compared with their behaviour in the dark; the diode factor, the barrier height, and the series resistance are all dependent on light intensity.

Equivalent series resistance

Open-circuit voltage

Barrier layer

10.1049/ij-ssed.1978.0027

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Citations (13)

Optics and Lasers in Engineering (2008)

J.I.B. Wilson

10.1016/j.optlaseng.2008.02.003

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Physical degradation of a-Si films on thermal treatment: a scanning electron microscope study

Journal of Materials Science (1981)

P. John I. M. Odeh Michael Thomas M. J. Tricker J.I.B. Wilson

Glow discharge

Nanocrystalline silicon

10.1007/bf01033846

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Citations (8)

Is amorphous silicon played out?

Nature (1982)

J.I.B. Wilson

10.1038/295458a0

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Laser recrystallization for efficient multi-crystalline silicon solar cell

Journal of Physics D Applied Physics (2016)

Lihui Song J.I.B. Wilson James Lee

A multi-crystalline silicon wafer contains dislocations and grain boundaries, which are detrimental to the performance of the multi-crystalline silicon solar cell. The dislocations and grain boundaries extend across the junction and dramatically degrade the ideality and fill factor of the cell. In this paper, a laser is used to recrystallize the emitter region of a multi-crystalline silicon wafer to remove crystallographic defects present in the junction. It was demonstrated that, with an appropriate laser power and scan speed, laser recrystallized patterns can have an enhanced photoluminescence response and internal quantum efficiency. Backscattered electron image and x-ray diffraction analyses also revealed that the laser recrystallized layer resembles a single crystalline like layer. Introducing a full area laser recrystallized layer may improve the open circuit voltage and fill factor of the cell, which significantly improved cell efficiency. External quantum efficiency and dark I–V measurements consistently supported this result.

Recrystallization (geology)

10.1088/0022-3727/49/31/315601

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Citations (5)

Potential of energies neglected

Physics World (1991)

J.I.B. Wilson Randy Harrison

The article by Robert Hill on photovoltaic cells (August, p30) opens the debate afresh on whether there should be a concerted British effort in developing cells for use in the UK. Although I am pleased to see that the Department of Energy has at last recognised the usefulness of solar cells in this country, I hope that the programme of research referred to in the article will not concentrate on encouraging yet more photovoltaic materials and novel cell structures when we already have sufficient research expertise and specialist knowledge in the country to form the basis of a development programme. Previous enthusiasm for photovoltaics was killed by a lack of support from both the Department of Energy and from the big manufacturing concerns whose equivalents in other countries had the confidence to produce a product which has continued to sell. Research here was world class, but there was no confidence in establishing full-scale production of cells and modules.

World class

10.1088/2058-7058/4/10/18

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Solar Energy

J.I.B. Wilson

Source

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