Yong Huang

Georgia Institute of Technology

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Russell D. Dupuis

Georgia Institute of Technology

Jae‐Hyun Ryou

University of Houston

Chang‐An Wang

Tsinghua University

Xiujun Hao

Langfang Normal University

Yan Teng

Northwest Institute of Nuclear Technology

Yu Zhao

Chinese Academy of Sciences

Qihua Wu

Missouri State University

Gesheng Li

Wuhan University of Technology

Zunhua Zhang

Wuhan University of Technology

Qian Sun

University of Science and Technology of China

Cooperative Institutions

Chinese Academy of Sciences

181

Tsinghua University

University of Chinese Academy of Sciences

University of Science and Technology of China

Peking University

Suzhou Institute of Nano-tech and Nano-bionics

Shanghai Jiao Tong University

Georgia Institute of Technology

Wuhan University of Technology

Nanjing University

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Effects of concentration and boundary conditions on (E-CE)-C cholesteric phase

Polymer Bulletin (2000)

Linge Wang Yong Huang

Anchoring

Homeotropic alignment

Phase boundary

Cholesteric liquid crystal

Interphase

10.1007/s002890070061

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Citations (1)

Fuel consumption and NO emissions optimization of a marine natural gas engine with lean-burn and reformed exhaust gas recirculation strategies

Fuel (2023)

Wenwen Wei Gesheng Li Zunhua Zhang Yanxiang Long Yong Huang

Lean burn

Thermal efficiency

Gas engine

Mean effective pressure

10.1016/j.fuel.2023.129970

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Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD

Electronics Letters (2020)

Yan Teng Xiujun Hao Yu Zhao Qihua Wu Xin Li

The lateral diffusion length ( L h ) of minority carriers in LWIR InAs/GaSb superlattice detectors grown by metalorganic chemical vapour deposition was evaluated. The deeply‐etched PNn device exhibits a diffusion‐limited behaviour at 80 K, with a dark current density as low as 9.1 × 10 −6 A/cm 2 at −0.1 V and a 50% cut‐off of 10.1 μm. In shallow‐etched pixels with a common absorber, both the photo‐current and the dark current show a size‐dependent behaviour. L h deduced from the two methods are 211 and 251 μm, respectively, which are longer than those in superlattice materials grown by molecular beam epitaxy.

Lateral diffusion

10.1049/el.2020.1076

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High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD

Photonics (2021)

He Zhu Jia-Feng Liu Hong Zhu Yunlong Huai Meng Li

High operating temperature mid-wavelength InAs/GaSb superlattice infrared photodetectors with a single heterojunction structure grown by metal–organic chemical vapor deposition are reported. By inserting a fully-depleted wider-gap barrier layer between the absorber and the p-contact, “diffusion-limited” behavior has been achieved for the heterojunction “PNn” device, in contrast to the conventional pin homojunction device. The PNn device with a 50% cutoff wavelength of 4.5 μm exhibited a dark current of 2.05 × 10−4 A/cm2 and a peak specific detectivity of 1.28 × 1011 cm·Hz·W−1 at 150 K and a reverse bias of −0.1 V.

Homojunction

Photodiode

Specific detectivity

Indium arsenide

10.3390/photonics8120564

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Citations (8)

InAs/GaSb superlattice long-wavelength infrared detectors with InPSb hole barriers

Infrared Physics & Technology (2024)

Xinyi Pan Hong Zhu Z. G. Liu Shuqing Deng Min Xiong

We report high-performance double heterojunction long-wavelength infrared detectors based on InAs/GaSb superlattices grown by metal–organic chemical vapor deposition. A p-type InAs/GaSb superlattice absorber was combined with an InPSb hole barrier to suppress the dark current and facilitate the transport of minority electrons. At 77 K, the device demonstrates a dark current of only 1.4 × 10−5 A/cm2 at − 0.1 V. Spectral measurement indicates the device has a 50 % cut-off wavelength of 9.4 μm, a peak blackbody responsivity of 2.8 A/W and a peak specific detectivity over 1.2 × 1012 cm·Hz/W.

Gallium antimonide

Infrared detector

10.1016/j.infrared.2024.105405

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Device performance of light emitting transistors with C-doped and Zn-doped base layers

Yong Huang Jae‐Hyun Ryou Russell D. Dupuis F. Dixon N. Holonyak

N-InP/p-InAlGaAs/N-InAlAs light emitting transistors (LETs) operating at ~1.55 mum were investigated. Both carbon (C) and zinc (Zn) were used as the p-type dopant of the base layers. It was found that C stays in place while Zn diffuses into the emitter and the base active region, resulting in compromised electrical performance and light output intensity. On the other hand, due to a short minority carrier lifetime, LETs with the C-doped base have a much smaller current gain than LETs with the Zn-doped base.

Base (topology)

Wide-bandgap semiconductor

10.1109/iciprm.2009.5012449

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Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

J Chen Jinfeng Wang Ji‐chun Zhang H Wang Yong Huang

By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction, existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.

Source

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Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition

Materials Letters (2006)

Hongmei Wang Yong Huang Qian Sun J. Chen J.J. Zhu

Deposition

10.1016/j.matlet.2006.05.001

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Citations (4)

Study on Preparation of Spherical Zirconia Powder in Microemulsion System and its Surface Characteristics

Key engineering materials (2007)

Jintao He Tian Ma Yong Huang Jin Yang

In this paper, a W/O microemulsion system composed of cyclohexane / water / TritonX-100 / hexyl alcohol is adopted to prepare ultrafine spherical zirconia powder via the reaction between the precipitant and zirconium salt solved in the nano reactors. Furthermore, the powder’s surface characteristics and aqueous dispersibility that strongly depends on the post-treatment process are investigated thoroughly.

Microemulsion

Zirconium oxide

10.4028/www.scientific.net/kem.280-283.977

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Double-waveguide quantum cascade laser

Applied Physics Letters (2012)

Romain Blanchard Cécile Grèzes Stefan Menzel Christian Pflügl Laurent Diehl

We demonstrate 1.1 W peak power at room-temperature from a double-waveguide quantum cascade laser (QCL) grown by metal-organic chemical vapor deposition. Two full broadband QCL active regions were grown on top of each other separated by thick cladding layers to reduce gain competition. Simultaneous lasing on Fabry-Perot modes separated by as much as 360 cm−1 is obtained. This design paves the way for high-brightness broadband mid-infrared sources, as well as more complex three-terminal devices.

Cladding (metalworking)

Quantum cascade laser

Waveguide

10.1063/1.3678033

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Citations (6)