J. P. Long

Chinese Academy of Sciences

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M. N. Kabler

United States Naval Research Laboratory

R. T. Williams

Las Vegas Institute

J. C. Rife

National Institute of Standards and Technology

V. M. Bermudez

United States Naval Research Laboratory

S. S. Goldenberg

Fraunhofer Institute for Solar Energy Systems

B. S. Itchkawitz

Fritz Haber Institute of the Max Planck Society

T. R. Royt

United States Naval Research Laboratory

Pehr E. Pehrsson

United States Naval Research Laboratory

S. J. Chase

United States Naval Research Laboratory

Richard A. Flynn

Optics Technology (United States)

Cooperative Institutions

United States Naval Research Laboratory

Optical Sciences (United States)

Northwestern University

United States Navy

K Lab (United States)

National Institute of Standards and Technology

Sandia National Laboratories

Fritz Haber Institute of the Max Planck Society

Naval Research Laboratory Optical Sciences Division

Naval Research Laboratory Chemistry Division

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Transverse-microcavity modulation of photoluminescence from GaN nanowires

Applied Physics Letters (2010)

J. P. Long Richard A. Flynn I. Vurgaftman Blake S. Simpkins Antti Mäkinen

Spatially resolved photoluminescence (PL) spectra from tapered GaN nanowires (NWs) with triangular cross section exhibit marked intensity modulations along the NW length. The modulation periodicity is attributed to previously unrecognized, leaky transverse standing-waves that occur when the PL wavelength matches path length criteria. These Fabry–Perot modes can affect optical measurements in transparent nanostructures even for dimensions less than ∼λ/2n, where λ is the free-space wavelength and n is the index of refraction.

Modulation (music)

10.1063/1.3488018

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Citations (3)

Surface space-charge dynamics and surface recombination on silicon (111) surfaces measured with combined laser and synchrotron radiation

Physical Review Letters (1990)

J. P. Long Hassan R. Sadeghi J. C. Rife M. N. Kabler

The results of a new experiment, which records transient, pulsed-laser-induced surface photovoltages by following photoemission shifts measured with synchrotron radiation, are reported. Comparison of the surface photovoltage decays with numerical simulations reveals large surface recombination rates for a variety of Si(111) surface preparations. The space-charge layer near the surface is found to govern the surface and bulk carrier concentrations to a remarkable extent, particularly when band bending is large.

Dynamics

10.1103/physrevlett.64.1158

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Citations (113)

Photoemission Study of Low-Fluence, Non-Thermal Laser Damage of UHV-Cleaved Gallium Arsenide (110)

MRS Proceedings (1990)

S. S. Goldenberg J. P. Long M. N. Kabler

10.1557/proc-201-519

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Citations (1)

Electron Energy Distributions During Pulsed Laser Annealing and Damage of Silicon

MRS Proceedings (1981)

R. T. Williams M. N. Kabler J. P. Long J. C. Rife T. R. Royt

Photoelectric effect

10.1557/proc-4-97

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Citations (1)

Characterization of reconstructed SiC(100) surfaces using soft-x-ray photoemission spectroscopy

Applied Physics Letters (1995)

V. M. Bermudez J. P. Long

The surface quality of βSiC films grown on Si(100) by chemical vapor deposition has been assessed through synchrotron photoemission measurements of the valence band and of the linewidths and surface-induced structure in Si 2p core-level spectra. For these n-type samples, band bending is small on the c(2×2) and (3×2) surfaces but larger on the (2×1), which also exhibits an increased Si 2p linewidth and evidence of elemental Si patches. All three reconstructions show emission from gap states extending from the valence band maximum to the Fermi level.

Band bending

Laser linewidth

Inverse photoemission spectroscopy

Wide-bandgap semiconductor

10.1063/1.114061

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Citations (79)

Photoelectron Spectroscopy of Conduction-Electron Energy Distributions in Laser-Excited Silicon

MRS Proceedings (1984)

J. P. Long R. T. Williams J. C. Rife M. N. Kabler

10.1557/proc-35-81

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Citations (4)

Electronic dispersion in two overlapping graphene sheets: Impacts of long-range atomic ordering and periodic potentials.

Taisuke Ohta Peter J. Feibelman Cristian B Diaconescu Thomas Edwin Beechem Jeremy T. Robinson

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Surface passivation of InAs(001) with thioacetamide

Applied Physics Letters (2005)

Dmitri Y. Petrovykh J. P. Long L. J. Whitman

We describe the passivation of InAs(001) surfaces with thioacetamide (CH3CSNH2 or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide (NH4)2Sx. Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.

Passivation

Thioacetamide

10.1063/1.1946182

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Citations (35)

Excited-state photoelectron spectroscopy of excitons inC60and photopolymerizedC60

Physical review. B, Condensed matter (2001)

J. P. Long S. J. Chase M. N. Kabler

Laser-excited states in films of pristine ${\mathrm{C}}_{60}$ and photopolymerized ${\mathrm{C}}_{60}$ $(pp\ensuremath{-}{\mathrm{C}}_{60})$ prepared in ultrahigh vacuum have been characterized in situ with pump-probe photoelectron spectroscopy using both synchrotron radiation and picosecond laser sources. Photoelectron spectra of singlet ${(S}_{1})$ and triplet ${(T}_{1})$ excitons overlap because of vibrational broadening in the photoemission final state. The spectra have been individually isolated in $pp\ensuremath{-}{\mathrm{C}}_{60}$ with time-resolved methods and are split by 0.33 eV. Signals from pristine ${\mathrm{C}}_{60}$ are weaker but are spectroscopically similar. The origin for exciton transitions for both ${\mathrm{C}}_{60}$ and $pp\ensuremath{-}{\mathrm{C}}_{60}$ is found to be properly located near the maximum of the highest occupied molecular orbital. Increasing excitation density favors ${T}_{1}$ production over ${S}_{1}$ such that, at high exciton concentrations, ${T}_{1}$ states predominate, even at times much shorter than the unimolecular intersystem crossing time, measured to be \ensuremath{\sim}2.5 ns for $pp\ensuremath{-}{\mathrm{C}}_{60}$ at 81 K. A weaker photoemission band located \ensuremath{\sim}0.5 eV above ${S}_{1}$ is also observed and is attributed to charge carriers and/or charge-transfer excitons.

Intersystem crossing

Picosecond

10.1103/physrevb.64.205415

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Citations (16)

Photoemission and C 1s near-edge absorption from photopolymerized C60 films

Chemical Physics Letters (1995)

B. S. Itchkawitz J. P. Long Thomas Schedel‐Niedrig M. N. Kabler A.M. Bradshaw

Inverse photoemission spectroscopy

Photon energy

XANES

Absorption edge

10.1016/0009-2614(95)00788-6

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Citations (34)