J. Chen

Digital Research Alliance of Canada

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J. Z. Sun

IBM (United States)

J. Nowak

IBM (United States)

Tom Zhong

Nanjing Medical University

Masood Qazi

Massachusetts Institute of Technology

Aihua Zhong

Shenzhen University

G. Liu

Digital Research Alliance of Canada

Phillip Sherman

International Rectifier (United Kingdom)

Jiahui Yuan

China University of Mining and Technology

R. Tong

IBM (United States)

Run Xiao

Pennsylvania State University

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Digital Research Alliance of Canada

IBM (United States)

IBM Research - Thomas J. Watson Research Center

Micron (United States)

Massachusetts Institute of Technology

Chinese Academy of Sciences

Nanjing University

Infineon Technologies (United States)

Seagate (United States)

IBM Research - Almaden

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A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

R. S. Beach Tai Min C. Horng Q. Chen Phillip Sherman

We have demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 Ω—μm ² that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR ≫ 15σ(R p ), write threshold spread σ(Vw)/≪Vw≫ ≪7.1%, breakdown-to-write voltage margin over 0.5V, read-induced disturbance rate below 10 ⁻⁹ , and sufficient write endurance, and is free of unwanted write-induced magnetic reversal. The statistics suggest that a 64Mb chip at the 90-nm node is feasible.

Tunnel magnetoresistance

Magnetoresistive random-access memory

Spin-transfer torque

10.1109/iedm.2008.4796679

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Citations (48)