J. Stuchlı́k

Research Field

First Page

Microcrystalline silicon

Microcrystalline

10.1063/1.2135206

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Citations (1)

Ultrafast Charge Carrier Recombination in a-Si:H and μc-Si:H

physica status solidi (a) (1999)

G. Juška M. Viliũnas K. Arlauskas J. Stuchlı́k J. Kočka

The ultrafast nonradiative bimolecular recombination of charge carriers was investigated in amorphous and microcrystalline silicon. The photoelectric method based on measurement of extraction time of the charge carrier reservoir in the space-charge-limited photocurrent mode was used. A series of models (Auger, diffusion-controlled, charge-carrier-fluctuation dominated) were experimentally tested but were not able to explain all features of bimolecular recombination in a-Si:H. The model of diffusion limited recombination taking into account the intrinsic random potential seems most suitable for a description of the observed suppressed bimolecular recombination.

Charge carrier

Photocurrent

Auger effect

10.1002/(sici)1521-396x(199902)171:2<539::aid-pssa539>3.0.co;2-8

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Citations (9)

Scattering of terahertz phonons in amorphous silicon and germanium

Journal of Experimental and Theoretical Physics (1991)

А. В. Акимов A. A. Kaplyanskiǐ J. Kočka E. S. Moskalenko J. Stuchlı́k

Solid-state physics

Germanium compounds

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[Determination of iodine in contrast media using radioisotope x-ray fluorescent analysis. Industrial tests].

PubMed (1973)

E Havránek A. Bumbálová Angela Nemčíková J. Stuchlı́k

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Different Social and Economic Strategies Taken in Spring 2020 in Response to the Covid-19 Pandemic and Their Medium-term Economic Consequences across the EU Countries

J. Stuchlı́k

Pandemic

Medium term

2019-20 coronavirus outbreak

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Characterization of mixed phase silicon by Raman spectroscopy

Journal of Non-Crystalline Solids (2006)

Martin Ledinský Ladislav Fekete J. Stuchlı́k T. Mates A. Fejfar

Microcrystalline

10.1016/j.jnoncrysol.2005.10.072

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Citations (48)

Psychiatři a praktičtí lékaři pracují na společném projektu

Psychiatrie pro praxi (2008)

J. Stuchlı́k Barbora Wenigová

Centrum pro rozvoj pece o dusevni zdravi (nestatni neziskova organizace založena v roce 1995, jejimž hlavnim cilem je napomahat procesu změny pece o dusevně nemocne) připravilo projekt „Rozvoj dalsiho vzdělavani praktických lekařů a psychiatrů v problematice komunitni pece o dusevně nemocne“ (CZ.04.3.07/3.2.01.03) financovaný Evropským socialnim fondem, statnim rozpoctem Ceske republiky a rozpoctem hlavniho města Prahy v grantovem schematu JPD 3. Cilem projektu bylo připravit vzdělavaci modul odpovidajici obsahově i formou vzdělavacim potřebam ambulantnich psychiatrů a praktických lekařů v oblasti komunitni pece o dusevně nemocne. Projekt je uzemně omezen na Prahu, ale lze předpokladat, že jeho výstupy budou použitelne v cele Ceske republice.

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Photoluminescence and Electroluminescence of Wide-Gap Amorphous Hydrogenated Silicon Prepared under High Dilution with He

physica status solidi (a) (1998)

I. Pelant K. Luterová K. Luterová P. Knápek J. Kočka

Absorption spectra in the visible and IR regions and photoluminescence (PL) spectra of wide-gap hydrogenated amorphous silicon (a-Si:H) are investigated. The possible origin of the room temperature visible PL is discussed. First electroluminescence results on a p–i–n structure are reported.

Dilution

10.1002/(sici)1521-396x(199801)165:1<25::aid-pssa25>3.0.co;2-c

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Citations (9)

Studies of the Gap States Density in Undoped and Doped Amorphous Hydrogenated Silicon

Springer eBooks (1982)

J. Kočka M. Vaněček J. Stuchlı́k O. Štika E. Šı́pek

Density of states

Dangling bond

Photocurrent

Photoconductivity

10.1007/978-94-009-7898-0_72