W.H. Lan

Guangdong Ocean University

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Henry S. White

University of Utah

Shoou‐Jinn Chang

National Central University

Y.K. Su

Ashikaga University

Lu‐Yin Lin

National Taipei University of Technology

Y. T. Cherng

Simon Fraser University

S. L. Tu

Guangdong University of Technology

Bin Fu

Shanghai Institute of Technology

R. C. Tu

Industrial Technology Research Institute

Deric A. Holden

University of Utah

Ta‐Ming Kuan

Taiwan Semiconductor Manufacturing Company (Taiwan)

Cooperative Institutions

National Cheng Kung University

National Yang Ming Chiao Tung University

National Chung Shan Institute of Science and Technology

National Taiwan University

Institute of Microelectronics

Harvard University

Chung Yuan Christian University

National Central University

University of Utah

National Sun Yat-sen University

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Nitride-based 2DEG photodetectors with a large AC responsivity

Solid-State Electronics (2003)

S.J. Chang Ta‐Ming Kuan C.H. Ko Y.K. Su J. B. Webb

10.1016/s0038-1101(03)00246-6

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Citations (16)

CCDC 1941671: Experimental Crystal Structure Determination

The Cambridge Structural Database (2020)

Xuan Yu W.H. Lan Jiaqi Li Hui Bai Zhaohai Qin

10.5517/ccdc.csd.cc235gkb

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Citations (0)

The influence of vicinal sapphire substrate on GaN epilayers and LED structures grown by metalorganic chemical vapor deposition

Materials Science and Engineering B (2005)

Jian-Cheng Lin Y.K. Su W.H. Lan Ta‐Ming Kuan W.R. Chen

Vicinal

10.1016/j.mseb.2005.11.018

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Citations (3)

Carl Wagner Memorial Award Presentation: Electrochemistry in Synthetic and Biological Nanopores

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2009)

Anna E. P. Schibel Thomas H. Edwards Ryuji Kawano W.H. Lan Deric A. Holden

Abstract not Available.

Presentation (obstetrics)

Nanopore

10.1149/ma2009-02/4/3242

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Citations (0)

Pressure-Driven Nanoparticle Transport across Glass Membranes Containing a Conical-Shaped Nanopore

The Journal of Physical Chemistry C (2011)

W.H. Lan Deric A. Holden Jin Liu Henry S. White

Experimental, theoretical, and finite-element simulation investigations of the pressure-driven translocation of nanoparticles across a conical-shaped glass nanopore membrane (GNM) are presented. The translocation of the particles is experimentally analyzed by measuring the shape of transient pulses when current flowing between two Ag/AgCl electrodes, located on opposite sides of the GNM, is momentarily interrupted as a particle passes through the nanopore. Asymmetric triangular-shaped resistive pulses are observed for the translocation of 120 nm radius particles through a 210 nm radius GNM at a transmembrane pressure between −2 and −160 mmHg. A linear dependence is observed between the particle translocation frequency and the applied pressure. Analytical theory and finite-element simulation for pressure-driven flow through a conical-shaped pore were developed to compute the volumetric flow rate, the position-dependent particle velocity, and the particle translocation frequency. The translocation frequencies computed from theory and simulation as a function of pressure were found to be in agreement with experimental observations. The particle translocation pulse shape was also computed by a combination of finite-element simulation with a dynamic nanoparticle trajectory calculation. Surprisingly, the simulations demonstrate that pulse widths are nearly independent of the nanopore radius. The independence of pulse width on nanopore size is a consequence of both the solution velocity and the width of the electrical sensing zone increasing in proportion to the orifice radius for conical-shaped pores.

Nanopore

Particle (ecology)

Bend radius

10.1021/jp204839j

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Citations (101)

Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

Materials Science and Engineering B (2004)

Y.K. Su S.J. Chang Ta‐Ming Kuan C.H. Ko J. B. Webb

Dry etching

Isotropic etching

10.1016/j.mseb.2004.02.006

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Citations (1)

Low Dark Current GaN p-i-n Photodetectors With a Low-Temperature AlN Interlayer

IEEE Photonics Technology Letters (2008)

Jian-Cheng Lin Yifan Su S.J. Chang W.H. Lan W.R. Chen

GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AlN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AlN interlayer could be achieved under high reverse biases due to its very low dark current. The rejection ratio of the PD with the LT-AlN interlayer is as large as 735 at the reverse bias of 40 V.

Reverse bias

Ultraviolet

10.1109/lpt.2008.926021

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Citations (14)

Designed Post-Self-Assembly Structural and Functional Modifications of a Truncated Tetrahedron

Journal of the American Chemical Society (2011)

Yao‐Rong Zheng W.H. Lan Ming Wang Timothy R. Cook Peter J. Stang

Post-self-assembly modifications of a discrete metal–organic supramolecular structure have been developed. Such modifications allow the properties of the self-assembled supramolecular species to be changed in a simple and efficient manner (>90% yield). Initiated by the application of chemical stimuli, the post-self-assembly modifications described herein result in three distinct changes to the supramolecular system: an individual building-block component change, an overall structural modification, and a functional evolution of a [6+4] metal–organic supramolecular structure. The three modifications have been carefully examined by a range of characterization methods, including NMR and UV–vis spectroscopy, electrospray ionization mass spectrometry, pulsed field gradient spin echo NMR measurements, electrochemical analysis, and computational simulations.

Characterization

Tetrahedron

Supramolecular assembly

10.1021/ja207217t

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Citations (120)

Wavelength Shift of Gallium Nitride Light Emitting Diode With p-Down Structure

IEEE Transactions on Electron Devices (2005)

W.H. Lan

Both the p-gallium nitride (GaN) on an n-light-emitting diode (LED) structure and the n-GaN on p-LED structure were fabricated by metal-organic vapor phase epitaxy on c axis sapphire substrate. The output spectra with different applied bias voltages were studied on these structures. The small amount of the wavelength shift under a forward bias condition in the proposed p-down LED structure was observed but not in the n-down LED structure. This phenomenon was characterized by the effective electric field in the well created from the built-in electric field and the applied electric field. This proposed p-down LED shows an opportunity in the application of wavelength shift-free optoelectronic devices.

Wide-bandgap semiconductor

Biasing

Indium gallium nitride

10.1109/ted.2005.848114

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Citations (27)

Nanoparticle Transport in Conical-Shaped Nanopores

Analytical Chemistry (2011)

W.H. Lan Deric A. Holden Bo Zhang Henry S. White

This report presents a fundamental study of nanoparticle transport phenomena in conical-shaped pores contained within glass membranes. The electrophoretic translocation of charged polystyrene (PS) nanoparticles (80- and 160-nm-radius) was investigated using the Coulter counter principle (or "resistive-pulse" method) in which the time-dependent nanopore current is recorded as the nanoparticle is driven across the membrane. Particle translocation through the conical-shaped nanopore results in a direction-dependent and asymmetric triangular-shaped resistive pulse. Because the sensing zone of conical-shaped nanopores is localized at the orifice, the translocation of nanoparticles through this zone is very rapid, resulting in pulse widths of ~200 μs for the nanopores used in this study. A linear dependence between translocation rate and nanoparticle concentration was observed from 10(7) to 10(11) particles/mL for both 80- and 160-nm-radius particles, and the magnitude of the resistive pulse scaled approximately in proportion to the particle volume. A finite-element simulation based on continuum theory to compute ion fluxes was combined with a dynamic electric force-based nanoparticle trajectory calculation to compute the position- and time-dependent nanoparticle velocity as the nanoparticle translocates through the conical-shaped nanopore. The computational results were used to compute the resistive pulse current-time response for conical-shaped pores, allowing comparison between experimental and simulated pulse heights and translocation times. The simulation and experimental results indicate that nanoparticle size can be differentiated based on pulse height, and to a lesser extent based on translocation time.

Nanopore

Resistive touchscreen

Particle (ecology)

10.1021/ac200312n

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Citations (224)