James C. Petrosky

U.S. Air Force Institute of Technology

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John W. McClory

U.S. Air Force Institute of Technology

P. A. Dowben

University of Nebraska–Lincoln

V.T. Adamiv

Vlokh Institute of Physical Optics

J. Matthew Mann

United States Air Force Research Laboratory

Ya. B. Losovyj

Indiana University

David J. Wooten

LabCorp (United States)

Ihor Ketsman

University of Nebraska–Lincoln

Ya.V. Burak

Lviv University

Christina Dugan

U.S. Air Force Institute of Technology

Stephen R. McHale

United States Naval Academy

Cooperative Institutions

U.S. Air Force Institute of Technology

Wright-Patterson Air Force Base

University of Nebraska–Lincoln

United States Air Force Research Laboratory

Institute of Electrical and Electronics Engineers

Northwestern University

Chinese Academy of Sciences

United States Air Force

Cornell University

Argonne National Laboratory

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Positron annihilation lifetime spectroscopy of dodecaborate cage molecules in aqueous nitrate solutions

C.M. Williams Robert C. Slaughter Larry W. Burggraf Michael R. Ross P. E. Adamson

A fast-fast PALS spectrometer incorporating two BaF 2 scintillation detectors was characterized. The PALS spectrometer was employed to measure a model explosives system having nitrate oxidizing sites and B 12 H 12 ⁻² reducing sites. Positron annihilation lifetimes and intensities were measured for nitrogen-purged aqueous solutions containing various concentrations of potassium dodecahydrododecaborate K 2 B 12 H 12 and potassium nitrate with added carrier-free ²² NaCl. Data analysis was accomplished using the PALSfit software program. The influence of electron scavenging and competition by nitrate ions was measured for various concentrations of potassium nitrate. Suppression of positronium formation by nitrate ions at 5 M concentration was greater for o-Ps than for p-Ps in 0.42 M dodecahydrododecaborate solution. At concentrations above 10 ⁻² M dodecahydrododecaborate only solutions the B 12 H 12 ⁻² anion suppressed p-Ps formation.

10.1109/nssmic.2009.5402266

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The rare earth 4 f hybridization with the GaN valence band

Bulletin of the American Physical Society (2013)

Lu Wang Wai-Ning Mei Steve McHale John W. McClory James C. Petrosky

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Modeling the Radiation Effects in MERCURY(1-X) Cadmium(x) Telluride Diodes.

James C. Petrosky

Mercury

Mercury cadmium telluride

Cadmium telluride photovoltaics

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Real-Time Fault Detection and Diagnostics Using FPGA-based Architectures

Nathan Naber Thomas Getz Yong Yook Kim James C. Petrosky

A new methodology for radiation induced real-time fault detection and diagnosis, utilizing FPGA-based architectures was developed. The methodology includes a full test platform to evaluate a circuit while under radiation and an algorithm to detect and diagnose fault locations within a circuit using Triple Design Triple Modular Redundancy (TDTMR). An analysis of the system was established using a fault injection. Additionally a functional gamma irradiation analysis was performed to assess the effectiveness of the method. The detection and diagnosis algorithm was capable of detecting errors by switching dynamically during the analysis of an FPGA. However, only the injected fault test was able to properly diagnose the location of the fault. The results indicate that FPGA radiation induced fault production is dependent upon radiation dose rate. A fully interchangeable and operational testing platform has been established along with an algorithm that detects and diagnoses errors in real-time.

Triple modular redundancy

Fault injection

10.1109/fpl.2010.75

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Citations (7)

Surface charging at the (100) surface of Cu doped and undoped Li2B4O7

Applied Surface Science (2010)

Jie Xiao N. Lozova Ya. B. Losovyj David J. Wooten Ihor Ketsman

Surface Photovoltage

Surface States

10.1016/j.apsusc.2010.11.033

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Citations (12)

Oxygen-Atom Defects In 6H Silicon Carbide Implanted Using 24- MeV O[sup 3+] Ions Measured Using Three-Dimensional Positron Annihilation Spectroscopy System (3DPASS)

AIP conference proceedings (2011)

Christopher S. Williams Xiaofeng Duan James C. Petrosky Larry W. Burggraf Floyd D. McDaniel

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Christopher S. Williams, Xiaofeng F. Duan, James C. Petrosky, Larry W. Burggraf; Oxygen‐Atom Defects In 6H Silicon Carbide Implanted Using 24‐ MeV O3+ Ions Measured Using Three‐Dimensional Positron Annihilation Spectroscopy System (3DPASS). AIP Conference Proceedings 1 June 2011; 1336 (1): 458–462. https://doi.org/10.1063/1.3586141 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search

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10.1063/1.3586141

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Effects of ionospheric scintillation on V and W band signals

David A. Smith Bertus Shelters Derek Hesser Peter J. Collins James Fee

Crowded frequency bands are forcing Earth to space applications to investigate frequency bands that are higher than those currently used. While natural ionosphere effects will be negligible on frequencies above 30 GHz, amplitude scintillation caused by a high altitude nuclear explosion (HANE) could degrade communication links for a period of time. Amplitude scintillation is modeled using the multiple phase screen method. The results show that for a short duration of a few minutes after a HANE that amplitude scintillation will have an impact on signal frequencies below 60 GHz.

Interplanetary scintillation

Forcing (mathematics)

L band

SIGNAL (programming language)

10.1109/apusncursinrsm.2017.8072442

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Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

Christopher Allen James C. Petrosky P. Orlando

This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10 ^-3 bit ^-1 yr ^-1 ; at 2000 km altitude, the rate increases to 1.9×10 ¹ bit ^-1 yr ^-1 . Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.

10.1109/naecon.2014.7045835

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The Electronic Structure and Secondary Pyroelectric Properties of Lithium Tetraborate

Materials (2010)

V.T. Adamiv Yaroslav Burak David J. Wooten John W. McClory James C. Petrosky

We review the pyroelectric properties and electronic structure of Li₂B₄O₇(110) and Li₂B₄O₇(100) surfaces. There is evidence for a pyroelectric current along the [110] direction of stoichiometric Li₂B₄O₇ so that the pyroelectric coefficient is nonzero but roughly 10³ smaller than along the [001] direction of spontaneous polarization. Abrupt decreases in the pyroelectric coefficient along the [110] direction can be correlated with anomalies in the elastic stiffness contributing to the concept that the pyroelectric coefficient is not simply a vector but has qualities of a tensor, as expected. The time dependent surface photovoltaic charging suggests that surface charging is dependent on crystal orientation and doping, as well as temperature.

Pyroelectric crystal

Stoichiometry

10.3390/ma3094550

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Citations (29)

Gamma-radiation-induced degradation of actively pumped single-mode ytterbium-doped optical fibers

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2014)

Briana J. Singleton James C. Petrosky M. Pochet Nicholas G. Usechak Sarah A. Francis

The integration of optical components into the digital processing units of satellite subsystems has the potential to remove interconnect bottlenecks inherent to the volume, mass, complexity, reliability and crosstalk issues of copper-based interconnects. Assuming on-board high-bandwidth communications will utilize passive optical fibers as a communication channel, this work investigates the impact of gamma irradiation from a Co-60 source on both passive optical fibers and ytterbium-doped single-mode fibers operated as amplifiers for a 1060-nm light source. Standard optical patch cables were evaluated along with active Yb-doped double-clad fibers. Varied exposure times and signal transmission wavelengths were used to investigate the degradation of the fibers exposed to total doses above 100 krad (Si). The effect on the amplified signal gain was studied for the Yb-doped fibers. The increased attenuation in the fibers across a broad wavelength range in response to multiple levels of gamma radiation exposure along with the effect that the increased attenuation has on the actively pumped Yb-doped fiber amplifier performance, is discussed.

Ytterbium

10.1117/12.2039613

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Citations (1)