Dawson B. Bonneville

University of Twente

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Jonathan D. B. Bradley

McMaster University

Henry C. Frankis

McMaster University

Hamidu M. Mbonde

McMaster University

Andrew P. Knights

McMaster University

Khadijeh Miarabbas Kiani

McMaster University

Sonia M. García‐Blanco

University of Twente

Batoul Hashemi

McMaster University

Meindert Dijkstra

University of Twente

Pooya Torab Ahmadi

McMaster University

Peter Mascher

McMaster University

Cooperative Institutions

McMaster University

University of Twente

Deutsches Elektronen-Synchrotron DESY

Fonctions Optiques pour les Technologies de l’information

Center for Free-Electron Laser Science

Universität Hamburg

LioniX (Netherlands)

Massachusetts Institute of Technology

École Polytechnique Fédérale de Lausanne

Centre National de la Recherche Scientifique

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A thulium-silicon hybrid microdisk laser

arXiv (Cornell University) (2021)

Khadijeh Miarabbas Kiani Henry C. Frankis Cameron M. Naraine Dawson B. Bonneville Andrew P. Knights

Silicon photonics technology enables compact, low-power and cost-effective optical microsystems on a chip by leveraging the materials and advanced fabrication methods developed over decades for integrated silicon electronics. Silicon foundries now provide many standard building blocks required for high-performance optical circuits, including passive components such as optical waveguides, filters and (de-)multiplexors and active optoelectronic components such as high-speed modulators, switches and photodetectors. However, because silicon is a poor light emitting material, on-chip light sources are still a significant challenge for foundry offerings. Current light-source integration methods are viewed as complex, requiring incompatible and/or expensive materials and processing steps. Here we report on an ultra-compact silicon photonic laser consisting of a thulium-silicon hybrid microdisk resonator. The microdisk design is straightforward and compatible with the fabrication steps and device dimensions available in all silicon photonics foundries, whereas the gain medium is added in a backend (final step), room temperature sputter deposition. This approach allows for low-cost and high-volume wafer-scale manufacturing and co-integration of light sources with silicon passive and active devices with no adjustment to standard process flows. The hybrid laser is pumped at standard telecom wavelengths around 1.6 {\mu}m and emits around 1.9 {\mu}m, which is within an emerging spectral region of significant interest for communications, nonlinear and quantum optics, and sensing on silicon.

Hybrid silicon laser

Microsystem

10.48550/arxiv.2104.10665

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Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2

arXiv (Cornell University) (2023)

Hamidu M. Mbonde Neetesh Singh Bruno L. Segat Frare Milan Sinobad Pooya Torab Ahmadi

Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si3N4 waveguide layer used is typically thick (>~700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave spanning SCG in a thinner moderate-confinement 400-nm Si3N4 platform using a highly nonlinear tellurium oxide (TeO2) coating. An octave-spanning supercontinuum is achieved at a low peak power of 258 W using a 100-fs laser centered at 1565 nm. Our numerical simulations agree well with the experimental results showing an increase of waveguide's nonlinear parameter by a factor of 2.5 when coating the Si3N4 waveguide with TeO2 film. This work demonstrates highly efficient SCG via effective dispersion engineering and an enhanced nonlinearity in a CMOS-compatible hybrid TeO2-Si3N4 waveguides and a promising route to monolithically integrated nonlinear, linear, and active functionalities on a single silicon photonic chip.

Supercontinuum

Waveguide

10.48550/arxiv.2309.08318

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High-Q-factor tellurium oxide clad silicon microring resonators

Khadijeh Miarabbas Kiani Dawson B. Bonneville Andrew P. Knights Jonathan D. B. Bradley

We present the design and experimental measurement of high-Q-factor on-chip tellurium-oxide-coated silicon microring resonators with internal Q factors of up to 1.5 × 10 ⁶ , corresponding to 0.4 dB/cm waveguide loss, at wavelengths around 1550 nm.

Tellurium

Q factor

Waveguide

Silicon oxide

10.1109/gfp51802.2021.9673831

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UV Laser Resist-Mask Writing for Low-Cost Prototyping of Integrated Optical Devices

Conference on Lasers and Electro-Optics (2019)

Dawson B. Bonneville Manuel Arturo Méndez-Rosales Henry C. Frankis Jonathan D. B. Bradley

We report on UV-laser photoresist-mask writing as a tool for fabricating integrated optical waveguides. We investigate feature width and roughness under different write settings and apply the technique to realize integrated Si 3 N 4 waveguides and devices. © 2019 The Author(s)

Photoresist

Rapid Prototyping

Integrated Optics

Feature (linguistics)

10.23919/cleo.2019.8750407

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High gain erbium doped aluminium oxide waveguide amplifiers integrated with silicon nitride circuits in a multi-layer platform

Dawson B. Bonneville Carlos E. Osornio Martínez Ivo Hegeman Meindert Dijkstra Sonia M. García‐Blanco

Reactive sputtering provides a scalable and robust approach to fabricate erbium doped waveguide amplifiers and can be used to integrate devices with other waveguide platforms. In this work, we present recent results on high gain (>25 dB) in Al2O3:Er3+ amplifiers fabricated via reactive sputtering, which are vertically integrated with underlying LioniX TriPleX Si3N4 circuitry.

Erbium

Waveguide

10.1117/12.3004710

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UV Laser Resist-Mask Writing for Low-Cost Prototyping of Integrated Optical Devices

Conference on Lasers and Electro-Optics (2019)

Dawson B. Bonneville Manuel Arturo Méndez-Rosales Henry C. Frankis Jonathan D. B. Bradley

Photoresist

Rapid Prototyping

Integrated Optics

10.1364/cleo_si.2019.sf2o.4

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Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides

Applied Sciences (2021)

Dawson B. Bonneville Jeremy Miller C.C. Smyth Peter Mascher Jonathan D. B. Bradley

We report on low-temperature and low-pressure deposition conditions of 140 °C and 1.5 mTorr, respectively, to achieve high-optical quality silicon nitride thin films. We deposit the silicon nitride films using an electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) chamber with Ar-diluted SiH4, and N2 gas. Variable-angle spectroscopic ellipsometry was used to determine the thickness and refractive index of the silicon nitride films, which ranged from 300 to 650 nm and 1.8 to 2.1 at 638 nm, respectively. We used Rutherford backscattering spectrometry to determine the chemical composition of the films, including oxygen contamination, and elastic recoil detection to characterize the removal of hydrogen after annealing. The as-deposited films are found to have variable relative silicon and nitrogen compositions with significant oxygen content and hydrogen incorporation of 10–20 and 17–21%, respectively. Atomic force microscopy measurements show a decrease in root mean square roughness after annealing for a variety of films. Prism coupling measurements show losses as low as 1.3, 0.3 and 1.5 ± 0.1 dB/cm at 638, 980 and 1550 nm, respectively, without the need for post-process annealing. Based on this study, we find that the as-deposited ECR-PECVD SiOxNy:Hz films have a suitable thickness, refractive index and optical loss for their use in visible and near-infrared integrated photonic devices.

Elastic recoil detection

Silicon oxynitride

Rutherford backscattering spectrometry

Ellipsometry

10.3390/app11052110

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The Broadband Aluminum Oxide Integrated Photonics Platform: Applications in Spectroscopy

Dawson B. Bonneville Ward A. P. M. Hendriks Nadia Chahir Meindert Dijkstra Sonia M. García‐Blanco

The Al<sub>2</sub>O<sub>3</sub> waveguide platform demonstrates broadband operation with low loss, enabling UV enhanced Raman spectroscopy that is spectrally separated from autofluorescence. Material fabrication, recent results, and future work towards sensing and integration will be discussed. Full-text article not available; see video presentation

Aluminum Oxide

10.1364/ais.2024.atu1a.1

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Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer

Quentin Coulaud Erwan Cadiou Marco Romanelli Mehdi Alouini Dawson B. Bonneville

Characterization

Erbium

Waveguide

10.1109/mwp62612.2024.10736307

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Lasing in a Hybrid Rare‐Earth Silicon Microdisk (Laser Photonics Rev. 16(1)/2022)

Laser & Photonics Review (2022)

Khadijeh Miarabbas Kiani Henry C. Frankis Cameron M. Naraine Dawson B. Bonneville Andrew P. Knights

Silicon Lasers In article number 2100348, Khadijeh Miarabbas Kiani and co-workers show that optical gain and lasing in an ultra-compact hybrid rare-earth silicon microdisk resonator emits at 1.9 µm, with an internal slope efficiency of 60% and >1 mW on-chip output power. The thulium laser is fabricated using low-temperature, and straightforward wafer-scale post-processing steps, which opens the potential for large-scale integration of monolithic 2-µm-band amplifiers and light sources within advanced silicon photonic microsystems.

Hybrid silicon laser

Nanophotonics

10.1002/lpor.202270005

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Citations (1)