Byounghak Lee

ON Semiconductor (United States)

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Lin‐Wang Wang

Institute of Semiconductors

A. H. MacDonald

The University of Texas at Austin

Nandini Trivedi

The Ohio State University

Zhengji Zhao

Lawrence Berkeley National Laboratory

Erich Strohmaier

Lawrence Berkeley National Laboratory

Hongzhang Shan

Huawei Technologies (United States)

David H. Bailey

Harvard University

Juan Meza

University of California, Merced

T. Jungwirth

Czech Academy of Sciences

Xavier Cartoixà

Universitat Autònoma de Barcelona

Cooperative Institutions

Lawrence Berkeley National Laboratory

Texas State University

The University of Texas at Austin

University of California, Santa Barbara

Cornell University

University of Illinois Urbana-Champaign

National Energy Research Scientific Computing Center

Argonne National Laboratory

Lawrence Livermore National Laboratory

Berkeley College

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Hole–hole correlation effects on magnetic properties of Mn III1−V diluted magnetic semiconductors

Physica E Low-dimensional Systems and Nanostructures (2001)

T. Jungwirth Byounghak Lee A. H. MacDonald

Magnetic semiconductor

10.1016/s1386-9477(01)00072-8

Cite

Citations (16)

Theory of ferromagnetism in diluted magnetic semiconductor quantum wells

Physical review. B, Condensed matter (2000)

Byounghak Lee T. Jungwirth A. H. MacDonald

We present a mean field theory of ferromagnetism in diluted magnetic semiconductor quantum wells. When subband mixing due to exchange interactions between quantum well free carriers and magnetic impurities is neglected, analytic result can be obtained for the dependence of the critical temperature and the spontaneous magnetization on the distribution of magnetic impurities and the quantum well width. The validity of this approximate theory has been tested by comparing its predictions with those from numerical self-consistent field calculations. Interactions among free carriers, accounted for using the local-spin-density approximation, substantially enhance the critical temperature. We demonstrate that an external bias potential can tune the critical temperature through a wide range.

Magnetic semiconductor

Spontaneous magnetization

Exchange interaction

10.1103/physrevb.61.15606

Cite

Citations (109)

The Linearly Scaling 3D Fragment Method for Large Scale Electronic Structure Calculations

Zhengji Zhao Juan Meza Byounghak Lee Hongzhang Shan Erich Strohmaier

The Linearly Scaling three-dimensional fragment (LS3DF) method is an O(N) ab initio electronic structure method for large-scale nano material simulations. It is a divide-and-conquer approach with a novel patching scheme that effectively cancels out the artificial boundary effects, which exist in all divide-and-conquer schemes. This method has made ab initio simulations of thousand-atom nanosystems feasible in a couple of hours, while retaining essentially the same accuracy as the direct calculation methods. The LS3DF method won the 2008 ACM Gordon Bell Prize for algorithm innovation. Our code has reached 442 Tflop/s running on 147,456 processors on the Cray XT5 (Jaguar) at OLCF, and has been run on 163,840 processors on the Blue Gene/P (Intrepid) at ALCF, and has been applied to a system containing 36,000 atoms. In this paper, we will present the recent parallel performance results of this code, and will apply the method to asymmetric CdSe/CdS core/shell nanorods, which have potential applications in electronic devices and solar cells.

Fragment (logic)

Linear scale

Code (set theory)

Periodic boundary conditions

10.2172/964376

Cite

Citations (3)

Thermodynamic stability and band alignment at SrTiO3/GaAs(001) interface

Bulletin of the American Physical Society (2015)

Joelson Cott Ravi Droopad Byounghak Lee

Interface (matter)

Source

Cite

Citations (0)

Conductivity and Spin Susceptibility for the Disordered 2D Hubbard Model

arXiv (Cornell University) (2008)

Kohjiro Kobayashi Byounghak Lee Nandini Trivedi

The effect of disorder on a class of transition metal oxides described by a single orbital Hubbard model at half filling is investigated. The phases are characterized by the nature of the electronic and spin excitations. The frequency and temperature-dependent conductivity and spin susceptibility as functions of disorder are calculated. The interplay of disorder and electron-electron interaction produces unusual behavior in this system. For example, the dc conductivity, which is vanishingly small at low disorder in the Mott phase and at high disorder in the localized phase, gets surprisingly enhanced at intermediate disorder in a "metallic" phase. Moreover, the spin susceptibility in this "metallic" phase is not the expected Pauli-behavior but Curie-$1/T$ due to the presence of local moments.

Pauli exclusion principle

10.48550/arxiv.0807.3372

Cite

Citations (1)

Functional materials integrated on III–V semiconductors

Microelectronic Engineering (2015)

Javad R. Gatabi Kevin Lyon Shafiqur Rahman Manuel Caro Juan Salvador Rojas-Ramírez

Spin Coating

10.1016/j.mee.2015.04.050

Cite

Citations (11)

Metal-Insulator and Magnetic Transitions in Strongly Correlated and Disordered Systems

Bulletin of the American Physical Society (2010)

Byounghak Lee Nandini Trivedi

Metal–insulator transition

Source

Cite

Citations (0)

Interplay of disorder and spin-orbit coupling in diluted magnetic semiconductors

Bulletin of the American Physical Society (2007)

Xavier Cartoix `a Byounghak Lee Nandini Trivedi Richard M. Martin

Spin–orbit interaction

Magnetic semiconductor

Orbit (dynamics)

Inductive coupling

Source

Cite

Citations (0)

Quantum Hall Super uids in Topological Insulator Thin Films

Bulletin of the American Physical Society (2012)

Dagim Tilahun Byounghak Lee Ewelina M. Hankiewicz A. H. MacDonald

Topological insulator

Source

Cite

Citations (0)

Effects of d-electrons in pseudopotential screened-exchange density functional calculations

Journal of Applied Physics (2008)

Byounghak Lee Lin‐Wang Wang Andrew Canning

We report a theoretical study on the role of shallow d states in the screened-exchange local density approximation (sX-LDA) band structure of binary semiconductor systems. We found that inaccurate pseudo-wave functions can lead to (1) an overestimation of the screened-exchange interaction between the localized d states and the delocalized higher energy s and p states, and (2) an underestimation of the screened-exchange interaction between the d states. The resulting sX-LDA band structures have substantially smaller band gaps compared with experiments. We correct the pseudo-wave functions of d states by including the semicore s and p states of the same shell in the valence states. The correction of pseudo-wave functions yields band gaps and d-state binding energies in good agreement with experiments and the full potential linearized augmented plane wave sX-LDA calculations. Compared with the quasiparticle GW method, our sX-LDA results shows not only similar quality on the band gaps but also much better d-state binding energies. Combined with its capability of ground-state structure calculation, the sX-LDA is expected to be a valuable theoretical tool for the II-VI and III-V (especially the III-N) bulk semiconductors and nanostructure studies.

Pseudopotential

GW approximation

Valence electron

10.1063/1.2936966

Cite

Citations (5)