Binghai Liu

Huazhong University of Science and Technology

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Hua Younan

Singapore Science Park

Xiaohan Chen

Shandong University

Jeffrey Lam

University of California, San Diego

Wenwen Guo

Jiangnan University

Qing Fang

Huazhong University of Science and Technology

Jun Ding

National University of Singapore

Lianyan Yan

Huazhong University of Science and Technology

Zhiqiang Mo

GlobalFoundries (Singapore)

Jianing Bi

Huazhong University of Science and Technology

Heng Li

University of Macau

Cooperative Institutions

National University of Singapore

GlobalFoundries (Singapore)

Chinese Academy of Sciences

Huazhong University of Science and Technology

Nanyang Technological University

GlobalFoundries (United States)

University of Science and Technology of China

Agency for Science, Technology and Research

Shandong University

University of Chinese Academy of Sciences

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Au nanocages/SiO₂ as saturable absorbers for passively Q-switched all-solid-state laser

Materials Research Express (2018)

Lili Wang Xiaohan Chen Jinxi Bai Binghai Liu Qiongyu Hu

Based on Au nanocages/SiO2 (Au-NCs/SiO2) as saturable absorber (SA), passively Q-switched Nd:YVO4 lasers with the output couplers (OCs) with the transmittance (T) of 4% and 10.8% were demonstrated, respectively. Q-switched pulse with the shortest pulse duration of 154.2 ns was achieved at T = 4% under the pump power of 2.11 W with the corresponding repetition rate of 280.0 kHz and average output power of 140.6 mW. While the maximum average output power of 150.2 mW was obtained at T = 10.8% under the pump power of 2.42 W, corresponding to the pulse width and repetition rate of 222.0 ns and 279.1 kHz.

Nanocages

Saturable absorption

Q-switching

Pulse duration

Output coupler

10.1088/2053-1591/aabe11

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Citations (1)

Electron beam radiation and its impacts to failure analysis in semiconductor industry

Elsevier eBooks (2019)

Binghai Liu Xiaoming Li Hua Younan Nan Cho Zhili Dong

Semiconductor Industry

radiation damage

10.1016/b978-0-08-101937-5.00002-6

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Two-dimensional Chemical Delineation of Junction Profile with High Spatial Resolution and Application in Failure Analysis in 65nm Technology Node

ECS Transactions (2009)

Binghai Liu Hua Younan Zhiqiang Mo Ng Adrian

In this work, we reported a new FIB-assisted polishing technique and a new chemical junction-staining recipe for the chemical delineation of junction profile of a 65nm device. With the new polishing technique and recipe, two-dimensional junction profile was successfully delineated with a clear LDD (lightly doped drain) profile. The delineation of the LDD profile indicates the high chemical selectivity of the staining recipe. The as-developed new polishing technique and new junction-staining recipe were successfully applied to a real failure analysis case in which defects related to the inhomogeneous implantation process were successfully identified

Recipe

Chemical Mechanical Planarization

10.1149/1.3204407

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Study on the impact of barrier metal deposition processes on W Via/CA ET high resistance by TEM failure analysis

Binghai Liu Irene Tee Seah Soo Sien Chen Ye Elizabeth

In this work we reported ET (electrical testing) failure case studies related to the process drift of barrier metal deposition (BM) during W via/CA process loops. We presented detailed TEM failure analysis in order to understand the failure mechanism and root cause behind the high via/CA resistance. We demonstrated the importance of TEM characterization and identification of key physical failure signatures for the root-cause understanding of via/CA-level ET failure, and the correlation between physical failure signatures and inline investigation results is the ley for the root cause understanding.

Failure mechanism

Root Cause Analysis

Deposition

10.1109/ipfa.2015.7224340

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Gold nano-triangles as saturable absorbers for a dual-wavelength passively Q-switched Nd:GYSGG laser

Laser Physics (2018)

Baomin Ma Ping Li Xiaohan Chen Lili Wang Binghai Liu

In this paper, gold nano-triangles (GNTs) were used as saturable absorbers (SAs) in a dual-wavelength Nd:GYSGG laser for the first time, to our best knowledge. The maximum average output power was 75 mW with the shortest pulse width of 374 ns at pulse repetition rates of 250 kHz, corresponding to a single pulse energy of 300 nJ. The laser operated at dual wavelengths of 1059.6 and 1062.4 nm under a pump power of 8.5 W. Our work demonstrated that GNTs are promising SAs for Q-switching dual-wavelength solid state lasers.

Saturable absorption

Q-switching

Pulse duration

10.1088/1555-6611/aabf71

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A developed wedge fixtures assisted high precision TEM samples pre-thinning method: Towards the batch lamella preparation

AIP Advances (2017)

Dandan Wang Yamin Huang Binghai Liu Lei Zhu Jeffrey Lam

Ion milling, wedge cutting or polishing, and focused ion beam (FIB) milling are widely-used techniques for the transmission electron microscope (TEM) sample preparation. Especially, the FIB milling provides a site-specific analysis, deposition, and ablation of materials in the micrometer and nanometer scale. However, the cost of FIB tools has been always a significant concern. Since it is inevitable to use the FIB technique, the improvement of efficiency is a key point. Traditional TEM sample preparation with FIB was routinely implemented on a single sample each time. Aiming at cost efficiency, a new pre-thinning technique for batch sample preparation was developed in this paper. The present proposal combines the sample preparation techniques with multi-samples thinning, cross-section scanning electron microscopy (SEM), wedge cutting, FIB and other sample pre-thinning techniques. The new pre-thinning technique is to prepare an edge TEM sample on a grinding and polishing fixture with a slant surface. The thickness of the wedges sample can be measured to 1∼2 μm under optical microscope. Therefore, this fixture is superior to the traditional optical method of estimating the membrane thickness. Moreover, by utilizing a multi-sample holding fixture, more samples can be pre-thinned simultaneously, which significantly improved the productivity of TEM sample preparation.

Sample Preparation

Wedge (geometry)

Ion milling machine

Fixture

10.1063/1.4980022

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Citations (2)

Reproductive factors and biological aging: the association with all-cause and cause-specific premature mortality

Human Reproduction (2024)

Gaojie Fan Qing Liu Jianing Bi Qing Fang Fei Luo

Are reproductive factors associated with biological aging, and does biological aging mediate the associations of reproductive factors with premature mortality?

Premature aging

Biological age

10.1093/humrep/deae250

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Arsenic Segregation Induced Gate Leakage by TEM Failure Analysis

Proceedings - International Symposium for Testing and Failure Analysis (2013)

Binghai Liu Si Ping Zhao E. Er Chang Chen Ghim Boon Ang

Abstract High gate to source/drain (S/D) leakage was observed at both failed pins and ET structures with random failure signatures. Detailed TEM failure analysis revealed an abnormal thin Nitrogen-rich nitride layer along the poly gate which extended to the S/D regions. Along the abnormal nitride layer, appreciable Arsenic (As) segregation occurred. The segregated As dopants at these interfaces may form a continuous conducting path, accounting for the gate to S/D leakage mechanism. The preferable As segregation at the Silicon nitride interface may be related to a vacancy-assisted As diffusion process.

Leakage (economics)

10.31399/asm.cp.istfa2013p0434

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17.4: Invited Paper: Characterization and Failure Analysis of OLED devices by FIB/TEM Techniques

SID Symposium Digest of Technical Papers (2021)

Binghai Liu Andrew Tan Younan Hua Mingshen Qiao Xiaomin Li

In this paper, we reported the application of TEM‐based techniques for the physical characterization and failure analysis of OLED devices. By using our new FIB‐TEM techniques, we successfully identified nanoscale multilayered organic film stacks in OLED devices, enabling the failure root understanding of the dark emission of R pixels in an OLD device. Other two case studies presented in this work demonstrated the importance of the combination of plane‐view FIB‐TEM with cross‐section FIB‐TEM techniques, and the grain size analysis techniques by TEM for the failure analysis of the OLED devices.

Characterization

Failure mechanism

10.1002/sdtp.15076

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Study on the relation between structural parameters and fracture strength of WC-Co cemented carbides

Materials Chemistry and Physics (2000)

Binghai Liu Yue Zhang Shixi Ouyang

Cemented carbide

Transgranular fracture

10.1016/s0254-0584(99)00152-2

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Citations (35)