Pierpaolo Palestri

University of Udine

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

L. Selmi

University of Modena and Reggio Emilia

254

David Esseni

University of Udine

173

F. Driussi

University of Udine

C. Fiegna

University of Bologna

Enrico Caruso

Infineon Technologies (Austria)

E. Sangiorgi

University of Bologna

Daniel Lizzit

University of Udine

A. Pilotto

Centre de Nanosciences et de Nanotechnologies

Roberto Nonis

Infineon Technologies (Austria)

R. Clerc

Centre National de la Recherche Scientifique

Cooperative Institutions

University of Udine

111

KU Leuven

Centre National de la Recherche Scientifique

IMEC

Institut polytechnique de Grenoble

University of California, Berkeley

Université Grenoble Alpes

European Organization for Nuclear Research

University of Adelaide

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Small-Signal Analysis of Decananometer Bulk and SOI MOSFETs for Analog/Mixed-Signal and RF Applications Using the Time-Dependent Monte Carlo Approach

IEEE Transactions on Electron Devices (2007)

S. Eminente N. Barin Pierpaolo Palestri C. Fiegna E. Sangiorgi

A state-of-the-art Monte Carlo simulator is applied to the investigation of the radio-frequency performance of bulk and ultrathin-body single-gate SOI MOSFETs that are designed according to the prescriptions of the 2005 ITRS for analog and mixed-signal applications. We provide an analysis of the signal-delay buildup along the channel and an investigation of the scaling properties of the parameters of the ac equivalent circuit, the transition frequency, and the 3-dB bandwidth of the voltage gain in common-source configuration. A comparison with a standard drift-diffusion approach is presented in order to discuss the main differences between the two transport models in terms of high-frequency ac analysis.

SIGNAL (programming language)

10.1109/ted.2007.902860

Cite

Citations (7)

Assessment of the impact of technology scaling on the performance of LC-VCOs

Proceedings of ESSCIRC (2009)

Davide Ponton G. Knoblinger A. Roithmeier Marc Tiebout M. Fulde

This paper analyzes the scaling of LC Voltage Controlled Oscillator (LC-VCO) implemented in advanced Planar CMOS technologies. An LC-VCO for GSM applications, has been designed in state-of-the-art 45/40 nm and 32 nm CMOS technologies, exploiting different Front- and Back-End Of Line (FEOL/BEOL) options. The designs are compared with each other and with recent literature in terms of power and phase-noise performance.

Electronic oscillator

10.1109/esscirc.2009.5325944

Cite

Citations (12)

Device simulations of ion-sensitive FETs with arbitrary surface chemical reactions

Leandro Julian Mele Pierpaolo Palestri L. Selmi

In this work, we exploit the general-purpose solver COMSOL, equipped with electrolyte and semiconductor physics modules, to implement a versatile model of potentiometric chemical sensors including arbitrarily complex surface reactions at the oxide/electrolyte interface with examples on 2D devicelevel simulations of an ISFET. Firstly, Multiphysics simulations of V TH sensitivity to pH sensing are compared with analyses based on semiconductor TCAD. Then, more complex Na ⁺ sensing experiments are examined and numerical simulations are compared against 1D electrochemical models.

ISFET

Multiphysics

Solver

Interface (matter)

10.1109/eurosoi-ulis53016.2021.9560696

Cite

Citations (2)

Full Band and Approximated Solutions of the Schrödinger Equation in Silicon Inversion layers

David Esseni Pierpaolo Palestri

Maxima and minima

Energy transport

10.1007/978-3-7091-0624-2_4

Cite

Citations (1)

Graphene for Radio Frequency Applications: the GRADE project

Gianluca Fiori S. Frégonèse Cristell Maneux Thomas Zimmer Valerio Di Lecce

Source

Cite

Citations (0)

Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method

Stefano Venica F. Driussi Amit Gahoi Satender Kataria Pierpaolo Palestri

The transfer length method is a well-established experimental technique to characterize the contact resistance of semiconductor devices. However, its dependability is questionable for metal-graphene contacts. We investigate in-depth the statistical error of the extracted contact resistance values and we devise strategies to limit such error and to obtain reliable results. The method has been successfully applied to samples with different contact metals.

Contact resistance

10.1109/icmts.2018.8383765

Cite

Citations (7)

Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET

Cem Alper José Luis Padilla Pierpaolo Palestri Adrian M. Ionescu

We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries. Through quantum simulations based on the effective mass approximation (EMA), it is found that the fin EHBTFET is affected by the corner effects at the substrate-fin interface, due to reduced electrostatic control that causes a dramatic reduction of the ON current. Three different solutions; corner smoothing, corner doping and trapezoidal fins; are proposed and their efficiency are assessed. The corner smoothing turns out to be ineffective whereas trapezoidal fins entail a device performance trade-off. Utilizing corner doping is the most viable choice to achieve a large ON current.

Smoothing

Fin

10.1109/essderc.2016.7599647

Cite

Citations (11)

Physical Description of the Mixed-Mode Degradation Mechanism for High Performance Bipolar Transistors

Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting (2006)

T. Vanhoucke G.A.M. Hurkx Danielle Panko Rafael Espino A. Piontek

The authors study the mixed-mode stress regime for bipolar transistors. From Monte Carlo simulations it was found that high-energy avalanche generated holes dominate the degradation and the energy dependence of the hot carriers on the device degradation was experimentally investigated including the pinch-in effect

Degradation

Mode (computer interface)

10.1109/bipol.2006.311150

Cite

Citations (21)

Device simulation for decananometer MOSFETs

Materials Science in Semiconductor Processing (2003)

E. Sangiorgi Pierpaolo Palestri David Esseni C. Fiegna A. Abramo

10.1016/s1369-8001(03)00076-3

Cite

Citations (3)

Comparative analysis of basic transport properties in the inversion layer of bulk and SOI MOSFETs: a Monte-Carlo study

L. Lucci David Esseni Pierpaolo Palestri L. Selmi

A Monte-Carlo simulator for the quasi-2D electron gas in the inversion layer of bulk and SOI MOSFETs has been developed. The code has been used to validate the momentum-relaxation-time technique, commonly used to evaluate the low field mobility, pointing out the importance of inter-subband transitions in SOI devices. The high field transport properties in thin SOI MOSFETs have been investigated, showing for the first time that surface roughness scattering could have a strong impact on the saturation velocity whose value is significantly lower than the value reported for bulk silicon and bulk MOSFETs. On the other hand, the high energy carrier distribution is only weakly influenced by carrier quantization.

Electron Mobility

Saturation velocity

10.1109/essder.2004.1356554

Cite

Citations (6)