Keisuke Ide

Tokyo Institute of Technology

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Toshio Kamiya

Tokyo Institute of Technology

Hideo Hosono

Tokyo Institute of Technology

Hidenori Hiramatsu

Institute of Science Tokyo

Takayoshi Katase

Tokyo Institute of Technology

Shigenori Ueda

National Institute for Materials Science

Xinyi He

Tokyo Institute of Technology

Junghwan Kim

Tokyo Institute of Technology

Naoto Watanabe

Seirei Social Welfare Community

Hideya Kumomi

Tokyo Institute of Technology

Hiroshi Kumigashira

Tohoku University

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Tokyo Institute of Technology

The University of Tokyo

Tokyo University of Science

Tohoku University

Japan Science and Technology Agency

Osaka University

National Institute of Advanced Industrial Science and Technology

National Institute for Materials Science

Nagoya University

High Energy Accelerator Research Organization

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Light irradiation and applied voltage history sensors using amorphous In-Ga-Zn-O thin-film transistors exposed to ozone annealing and fabricated under high oxygen pressure

Mutsumi Kimura Takayuki Hasegawa Tokiyoshi Matsuda Keisuke Ide Kenji Nomura

We have developed light irradiation and applied voltage history sensors using amorphous In-Ga-Zn-O (oc-IGZO) thin-film transistor (TFTs) exposed to ozone annealing and fabricated under high oxygen pressure. These a-IGZO TFTs have an interesting property; the Ids-Vgs characteristic shifts positively and becomes steep when gate voltage is applied whereas it recover the initial one with a small threshold voltage and a large subthreshold swing upon light illumination. Therefore, these a-IGZO TFTs can be used as light irradiation history sensors; first, the gate voltage is applied to initialize the Ids-Vgs characteristic, next, the light is irradiated and finally, the Ids-Vgs characteristic is measured which depends on the light irradiation history. Moreover, these a-IGZO TFTs can be also used as applied voltage history sensors; first, the light is irradiated to initialize the Ids-Vgs characteristic, next, the gate voltage is applied and finally, the Ids-Vgs characteristic is measured which depends on the value or time of the applied voltage.

10.1109/am-fpd.2014.6867208

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Synthesis and electro-optical property of high-purity layered SrTiN 2

Naoto Watanabe Akihiro Shiraishi Xinyi He Takayoshi Katase Keisuke Ide

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Realization and Band Alignment in Ultra-wide Bandgap Amorphous Semiconductors a-Ga-Zn-O

Junghwan Kim Takumi Sekiya Keisuke Ide Hidenori Hiramatsu Hideo Hosono

Realization (probability)

Amorphous semiconductors

Wide-bandgap semiconductor

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[Young Scientist Presentation Award Speech] Control of defects in ultra wide bandgap AOSs and applications for optoelectronic devices

The Japan Society of Applied Physics (2016)

Jung Hwan Kim Takumi Sekiya Keisuke Ide Hidenori Hiramatsu Hideo Hosono

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CSD 2164352: Experimental Crystal Structure Determination

The Cambridge Structural Database (2022)

Akihiro Shiraishi Shigeru Kimura Xinyi He Naoto Watanabe Takayoshi Katase

An entry from the Inorganic Crystal Structure Database, the world’s repository for inorganic crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the joint CCDC and FIZ Karlsruhe Access Structures service and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

10.25505/fiz.icsd.cc2bn5t0

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A New Solution Algorithm of the TSP

BIOSILICO (2009)

Keisuke Ide Satoshi Hasegawa Hajime Anada

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Publisher's Note: Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass [ECS J. Solid State Sci. Technol.,6, P410 (2017)]

ECS Journal of Solid State Science and Technology (2017)

Naoto Watanabe Junghwan Kim Keisuke Ide Hidenori Hiramatsu Hiroshi Kumigashira

Amorphous semiconductors

10.1149/2.0171708jss

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Multiple Roles of Hydrogen Treatments in Amorphous In–Ga–Zn–O Films

ECS Journal of Solid State Science and Technology (2017)

Haochun Tang Yosuke Kishida Keisuke Ide Yoshitake Toda Hidenori Hiramatsu

The roles of hydrogen introduced by post-deposition hydrogen treatments were investigated for amorphous In–Ga–Zn–O (a-IGZO) films using room-temperature hydrogen plasma (H-plasma) and high-temperature H2 annealing. It was found that these treatments cause different effects as confirmed by hard X-ray photoemission spectroscopy and difference spectrum analyses. The H-plasma treatment increased both the near-valence band maximum (near-VBM) states (observed just above VBM) and the –OH bonds (confirmed by O 1s core spectrum) if a-IGZO films were deposited under an optimum condition, leading to the conclusion that the room-temperature H treatment incorporates H to a-IGZO films as –OH bonds, and the increase in the relatively shallow near-VBM states (peaked at ∼1.0 eV, extended to ∼2.4 eV from VBM) is ascribed to the generated –OH bonds. On the other hand, high-temperature H2 annealing did not increase the O 1s –OH signal, and its difference spectrum showed a different peak centered at ∼0.7 eV. This difference spectrum is similar to that of H-less a-IGZO films deposited without O2 supply by ultra-high vacuum sputtering and assigned to oxygen deficiency. These results will contribute to control the operation characteristics and the instability issues of a-IGZO TFTs. Further, the deconvoluted difference spectra will be the standard fingerprints of these defects in a-IGZO.

10.1149/2.0071707jss

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Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors

Japanese Journal of Applied Physics (2017)

Keisuke Ide Mitsuho Kikuchi Masato Ota Masato Sasase Hidenori Hiramatsu

Abstract Microstructures of amorphous In–Ga–Zn–O (a-IGZO) thin films of different densities were analyzed. Device-quality a-IGZO films were deposited under optimum conditions, e.g., the total pressure P tot = 0.55 Pa produced high film densities of ∼6.1 g/cm 3 , while a very high P tot = 5.0 Pa produced low film densities of 5.5 g/cm 3 . Both films formed uniform high-density layers in the vicinity of the glass substrate, 10–20 nm in thickness depending on P tot , while their growth mode changed to a sparse columnar structure in thicker regions. X-ray reflectivity and in situ spectroscopic ellipsometry provided different results on densification by post deposition thermal annealing; i.e., the latter has a higher sensitivity. High- Z -contrast images obtained by high-angle annular dark-field scanning transmission electron microscopy were also useful for detecting nanometer-size non uniformity even in device-quality a-IGZO films.

Nanopore

Ellipsometry

10.7567/jjap.56.03bb03

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Rare Earth– and Transition Metal–Doped Amorphous Oxide Semiconductor Phosphors for Novel Light‐Emitting Diode Displays

Keisuke Ide Junghwan Kim Hideo Hosono Toshio Kamiya

Rare earth–doped amorphous oxide semiconductors (AOSs) enable room-temperature fabrication of inorganic light-emitting phosphors on a glass substrate. These AOS-based inorganic phosphor films possess clear advantages against organic semiconductors for light-emitting device applications, such as high optical transparency, much higher electron mobility, low defect densities, and good compatibility with low-temperature fabrication processes. This chapter compares several AOS host materials and dopants, including rare earth and transition metal elements. Although further improvement of luminance efficiency is necessary, the multicolor light emission realized in amorphous gallium oxide will lead to developing AOS-based self-emitting devices.

10.1002/9781119715641.ch27

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