Y. Tabuki

Research Field

Defects in reactive ion-etched Si have been investigated by means of a slow positron beam. A thin carbon-containing film (<30 Å) was formed on the Si surface after reactive ion etching (RIE). Vacancy-type defects, which were estimated to distribute over 1200 Å in depth by numerical fitting using the positron trapping model, were observed in the damaged subsurface region of Si. Aside from ion bombardment, ultraviolet radiation is also presumed to affect the formation of vacancies, interstitials in oxide and the formation of vacancies in Si substrate. The ionization-enhanced diffusion (IED) mechanism is expected to promote the diffusion of vacancies and interstitials into Si substrate.

10.1143/jjap.32.7

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Citations (6)

Evaluation of Vacancy-Type Defects in Simox Substrates by a Slow Positron Beam and a Pulsed Positron Beam

MRS Proceedings (1992)

H. Kametani Hajime Akiyama Yasuo Yamaguchi M. Koumaru Long Wei

Positron annihilation spectroscopy

Positron Lifetime Spectroscopy

10.1557/proc-262-235

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Citations (0)

The Interfacial Reactions in Ti/Si and Ni/Si Systems Observed by a Monoenergetic Positron Beam

MRS Proceedings (1992)

Shoichiro Tanigawa Long Wei Y. Tabuki

Annihilation

10.1557/proc-262-319

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Monoenergetic Positron Beam Studies of Oxygen in Single Crystal Silicon - Stress Induced Clustering of Oxygen Atoms in Silicon

MRS Proceedings (1992)

R. Nagai Eiji Takeda Y. Tabuki Long Wei Shoichiro Tanigawa

Nanocrystalline silicon

10.1557/proc-262-283

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Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation

Materials science forum (1992)

Akira Uedono Long Wei Y. Tabuki Hitoshi Kondo Shoichiro Tanigawa

10.4028/www.scientific.net/msf.105-110.1483

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Citations (1)

Effects of the Fermi Level on Defects in Be⁺-Implanted GaAs Studied by a Monoenergetic Positron Beam

Japanese Journal of Applied Physics (1991)

Akira Uedono Long Wei Y. Tabuki Hitoshi Kondo Shoichiro Tanigawa

Vacancy-type defects in 60-keV Be + -implanted GaAs(100) were studied by a monoenergetic positron beam. The depth distribution of vacancy-type defects in an n-type specimen (Si, 1×10 16 Si/cm 3 ) was obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The dominant defect species was identified as a divacancy from the characteristic value of the line-shape parameter S . These defects, however, could not be observed in the p-type specimen (Zn, 3×10 18 Zn/cm 3 ). This fact can be attributed to the recombination of vacancy-type defects and interstitial Ga atoms introduced by the Fermi level effect.

Annihilation

Line (geometry)

10.1143/jjap.30.l2002

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Citations (10)

Study of Interfacial Reactions in W/Si Systems by a Monoenergetic Positron Beam

Materials science forum (1992)

Y. Tabuki Long Wei Shoichiro Tanigawa K. Hinode Nobuhiko Kobayashi

10.4028/www.scientific.net/msf.105-110.1463

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Citations (2)

Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions

Materials science forum (1992)

Akira Uedono Long Wei Chisei Dosho Y. Tabuki Hitoshi Kondo

10.4028/www.scientific.net/msf.105-110.1471

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Citations (2)

Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam

MRS Proceedings (1992)

Yuzuru Ohji Akira Uedono Long Wei Y. Tabuki Shoichiro Tanigawa

Annihilation

Characterization

Metal gate

10.1557/proc-262-313

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Citations (1)

Stress-induced rearrangement of oxygen atoms in Si investigated by a monoenergetic positron beam

Journal of Applied Physics (1991)

Long Wei Y. Tabuki Hitoshi Kondo Shoichiro Tanigawa R. Nagai

A monoenergetic positron beam has been used to investigate the state of interstitial oxygen in Czochralski-grown Si with coverage of SiO2 (100 nm) and poly-Si (200 nm)/SiO2 (100 nm), respectively. It was found that (i) the growth of SiO2 gives rise to a strong Doppler broadening of positrons in the bulk of Si and (ii) such a broadening can be recovered to the original level by annealing at 450 °C, by the removal of overlayers using chemical etching and by long-term aging at room temperature. This broadening was assigned to arise from the positron trapping by oxygen interstitial clusters. It was concluded that film stress is responsible for the rearrangement of oxygen atoms in Czochralski-grown Si.

Isotropic etching

10.1063/1.349707

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Citations (11)

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