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Avinash P. Nayak

The University of Texas at Austin

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V. J. Logeeswaran

University of California, Davis

Nicolas Lafitte

Fluigent (France)

Vladimir Gubala

Cambridge Consultants (United Kingdom)

Pablo Varona

Universidad Autónoma de Madrid

Yabing Qi

Xi'an University of Architecture and Technology

Garry J. Bordonaro

Cornell University

Laurent Jalabert

The University of Tokyo

Thomas Nowotny

University of Sussex

Yann Le Gorrec

Franche-Comté Électronique Mécanique Thermique et Optique - Sciences et Technologies

Christophe Yamahata

École Polytechnique Fédérale de Lausanne

Cooperative Institutions

Meta (United States)

The University of Texas at Austin

Chinese Academy of Sciences

Menlo School

Centre National de la Recherche Scientifique

University of California, Davis

Meta (Israel)

Stanford University

Shanghai Jiao Tong University

University of Chinese Academy of Sciences

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Springer eBooks (2012)

Biana Godin Elka Touítou Rajaram Krishnan Michael J. Heller Nicolas G. Green

10.1007/978-90-481-9751-4_100182

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Dye Sensitized Solar Cells

Springer eBooks (2012)

Biana Godin Elka Touítou Rajaram Krishnan Michael J. Heller Nicolas G. Green

10.1007/978-90-481-9751-4_100196

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Citations (8)

Whispering Gallery Mode Resonator Biosensors

Springer eBooks (2012)

Richard P. Mann Avinash P. Nayak M. Saif Islam V. J. Logeeswaran Edward Bormashenko

Mode (computer interface)

10.1007/978-90-481-9751-4_121

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Citations (3)

DUV Photolithography and Materials

Springer eBooks (2012)

Biana Godin Elka Touítou Rajaram Krishnan Michael J. Heller Nicolas G. Green

10.1007/978-90-481-9751-4_370

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Citations (1)

Dry Etching Processes

Springer eBooks (2016)

Salman B. Inayat Avinash P. Nayak V. J. Logeeswaran M. Saif Islam

Dry etching

10.1007/978-94-017-9780-1_353

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Sonochemical approach for rapid growth of zinc oxide nanowalls

Applied Physics A (2012)

Avinash P. Nayak Aaron M. Katzenmeyer Yasuhiro Gosho Bayram Tekin M. Saif Islam

10.1007/s00339-012-6823-8

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Citations (22)

Doping of Organic Semiconductors

Springer eBooks (2012)

Biana Godin Elka Touítou Rajaram Krishnan Michael J. Heller Nicolas G. Green

Organic semiconductor

10.1007/978-90-481-9751-4_100188

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Pressure‐Induced Charge Transfer Doping of Monolayer Graphene/MoS₂ Heterostructure

Tribhuwan Pandey Avinash P. Nayak Jin Liu Samuel T. Moran Joon‐Seok Kim

A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D/IG measurements. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

10.1002/smll.201600808

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Citations (51)

Springer eBooks (2012)

Biana Godin Elka Touítou Rajaram Krishnan Michael J. Heller Nicolas G. Green

Dry etching

10.1007/978-90-481-9751-4_353

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Citations (1)

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Nature Communications (2014)

Avinash P. Nayak Swastibrata Bhattacharyya Jie Zhu Jin Liu Xiang Xia Wu

Molybdenum disulfide

Nanomaterials

Molecular electronic transition

10.1038/ncomms4731

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Citations (563)

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