P. M. Mooney

Columbia University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

J. O. Chu

Ewha Womans University

J. A. Ott

IBM Research - Thomas J. Watson Research Center

A. F. Basile

University of Bologna

F. K. LeGoues

IBM Research - Thomas J. Watson Research Center

Jean Jordan-Sweet

Brookhaven National Laboratory

Steven J. Koester

University of Minnesota

S. N. Coppersmith

University of Wisconsin–Madison

Keith Slinker

Universal Technical Institute

Levente J. Klein

IBM (United States)

Sarit Dhar

Auburn University

Cooperative Institutions

IBM (United States)

130

IBM Research - Thomas J. Watson Research Center

109

University of Wisconsin–Madison

Stanford University

Centre National de la Recherche Scientifique

Simon Fraser University

Argonne National Laboratory

University of Illinois Urbana-Champaign

University at Albany, State University of New York

Massachusetts Institute of Technology

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

Applied Physics Letters (2001)

Steven J. Koester K. Rim J. O. Chu P. M. Mooney J. A. Ott

The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si0.8Ge0.2 where the top Si thickness was 20–30 nm. Micro-Raman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100 °C for 30 s. However, the intensity of the Si peak was systematically reduced with increasing thermal processing, a result which is attributed to interdiffusion at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer.

Rapid thermal processing

Silicon-germanium

10.1063/1.1405151

Cite

Citations (55)

High Resolution X-Ray Diffraction Measurements of Strain Relaxed Sige/Si Structures

Advances in X-ray Analysis (1995)

P. M. Mooney Jean Jordan-Sweet G. B. Stephenson F. K. LeGoues J. O. Chu

Both double-crystal and triple-axis x-ray diffraction techniques have been used to study complex SiGe/Si structures. A novel method for measuring the nucleation activation energy of dislocation in strain relaxed SiGe/Si structures is presented to illustrate the usefulness of these techniques. 16 refs., 10 figs.

Strain (injury)

Silicon-germanium

Germanium compounds

10.1007/978-1-4615-1797-9_20

Cite

Citations (7)

Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction

Applied Physics Letters (1999)

G. M. Cohen P. M. Mooney E.C. Jones K. Chan P. M. Solomon

High resolution x-ray diffraction (HRXRD) is proposed as a nondestructive tool for the characterization of the silicon on insulator (SOI) film in bonded wafers. Although the bonded stack may consist of many amorphous layers, the measured diffraction spectra only show the crystalline SOI layer, thus providing a direct measurement of the film. We have demonstrated that HRXRD is capable of accurately measuring the film thickness, the tilt of the film planes with respect to the substrate planes, and the rotation misalignment of the bonded film with respect to the carrier substrate. SOI films with thicknesses down to 30 nm were readily measured with accuracy better than 1%. It is shown that an angular separation between the layer and the substrate diffraction peaks is maintained due to an unintentional miscut which usually exists in the starting wafers used for bonding. This angular separation is unique to bonded wafers as opposed to separation by implanted oxygen (SIMOX) wafers where the layer and substrate peaks are nonseparable. Calculated diffraction spectra based on the kinematic approach showed excellent agreement with the measured diffraction.

Wafer Bonding

10.1063/1.124513

Cite

Citations (36)

Thermal Stability of Strained Si on Relaxed Si1−xGex Buffer Layers

MRS Proceedings (2001)

P. M. Mooney Steven J. Koester J. A. Ott Jean Jordan‐Sweet J. O. Chu

Thermal Stability

10.1557/proc-686-a1.2

Cite

Citations (2)

Improved CMOS performance via enhanced carrier mobility

Materials Science and Engineering B (2006)

P. M. Mooney

Electron Mobility

10.1016/j.mseb.2006.06.048

Cite

Citations (3)

Bonding of Elastically Strain-Relaxed GaAs/InGaAs/GaAs Heterostructures to GaAs(001)

ECS Transactions (2008)

David Owen David Lackner O. J. Pitts S. P. Watkins P. M. Mooney

Bonding of elastically strain-relaxed GaAs/InGaAs/GaAs heterostructures has been achieved on GaAs(001) substrates by the method of in-place bonding. Pseudomorphic heterostructures were patterned and a sacrificial AlAs layer was removed by selective etching. As etching proceeds and the GaAs/InGaAs/GaAs structure is released from the substrate, elastic strain relaxation occurs and the strain-relaxed structures are weakly bonded in-place to the substrate. The bond between the strain-relaxed structure and the substrate was then strengthened by annealing under conditions similar to those used for whole wafer bonding of GaAs. The degree of strain relaxation of the InGaAs layer is determined by the relative thickness of the GaAs and InGaAs layers. The increase in the in-plane lattice parameter of these bonded GaAs/InGaAs/GaAs structures is 0.3-0.4%.

Wafer Bonding

Stress relaxation

Etch pit density

Strain (injury)

10.1149/1.2982878

Cite

Citations (3)

Comment on “Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses” [J. Appl. Phys. 110, 114115 (2011)]

Journal of Applied Physics (2012)

A. F. Basile P. M. Mooney

Low-temperature capacitance-voltage (C-V) characteristics of n-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors, presented by Paterson et al. [J. Appl. Phys. 110, 114115 (2011)], are modeled by analytical and numerical calculations of the capacitance taking into account the slow response of neutral donors and interface traps to the measurement test signal. This model provides an explanation for the absence of the dip near flat band in the high frequency C-V characteristics, contrary to the prediction based on the ideal MOS capacitance. These calculations also show that a broad energy distribution of interface-traps can explain the broadening of the C-V curve.

Admittance

10.1063/1.4756042

Cite

Citations (2)

Electron capture and emission at interface states in As-oxidized and NO-annealed SiO<inf>2</inf>/4H-SiC

International Semiconductor Device Research Symposium (2007)

Xu‐Dong Chen Sarit Dhar Tamara Isaacs‐Smith John R. Williams L. C. Feldman

The electrical and physical properties of silicon carbide (SiC) and its ability to form insulating SiO ₂ layers by thermal oxidation make it a promising material for high power, high-temperature, and high-frequency metal-oxide-semiconductor field effect transistors (MOSFETs). However, the development of 4H-SiC MOSFETs has been hindered by the high-density of interface states (D _it ) at the SiO ₂ /4H-SiC interface and a reduced electron mobility of <10cm ² /Vs in n-channel inversion layers. Interfacial nitridation via post-oxidation annealing in NO results in the incorporation of about a monolayer of N (~10 ¹⁵ cm ^-2 ) at or near the interface and reduces D _it near the conduction band-edge of 4H-SiC by almost an order of magnitude, leading to a significantly improved effective channel mobility in n-channel 4H-SiC MOSFETs. While nitridation has been established as the most efficient oxide processing scheme for SiC devices, the N related trap passivation mechanism and the electronic nature of residual traps at nitrided SiO ₂ /4H-SiC interfaces remains unclear. Here we present new insights on the capture and emission properties of interface traps from constant capacitance deep level spectroscopy (CCDLTS) measurements.

10.1109/isdrs.2007.4422264

Cite

Citations (0)

Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures

Journal of Applied Physics (2004)

Jiahui Cai P. M. Mooney Silke Christiansen H. Chen J. O. Chu

Strain relaxation and threading dislocation densities in Si1−xGex (0.15<x<0.30) produced by He implantation and annealing have been investigated using x-ray diffraction and transmission electron microscopy. The degree of strain relaxation is very sensitive to the SiGe layer thickness; only small differences in strain relaxation are obtained when the helium dose and energy are varied over a relatively wide range. In contrast, the threading dislocation density is strongly influenced by the implantation dose and depth. A composite parameter, the He dose in the SiGe layer (He(SiGe)), calculated from He profiles simulated using the program Stopping and Range of Ions in Matter (SRIM2000), correlates well with the threading dislocation density. We have found that to achieve a low threading dislocation density, <5×107 cm−2, He(SiGe) must be less than 1×1015 cm−2.

10.1063/1.1699488

Cite

Citations (38)

Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

Applied Surface Science (2014)

Gang Liu Yi Xu Can Xu A. F. Basile Feng Wang

10.1016/j.apsusc.2014.10.113

Cite

Citations (13)