Wu Lu

The Ohio State University

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Siddharth Rajan

The Ohio State University

Hao Xue

Tohoku University

Hyeongnam Kim

The Ohio State University

Towhidur Razzak

The Ohio State University

I. Adesida

University of Illinois Urbana-Champaign

Shahadat H. Sohel

National Renewable Energy Laboratory

Paul Bertani

The Ohio State University

Hao Yang

Liaoning University

Vishank Talesara

The Ohio State University

Jaesun Lee

Changwon National University

Cooperative Institutions

The Ohio State University

215

Wuhan University of Technology

122

Chinese Academy of Sciences

113

University of Chinese Academy of Sciences

Jilin University

University of California, Santa Barbara

State Key Laboratory of Advanced Technology For Materials Synthesis and Processing

Zhejiang University

Shandong University

Peking University

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High performance 0.25 μm gate-length AlGaN∕GaN HEMTs on sapphire with transconductance of over 400 mS∕mm

Electronics Letters (2002)

V. Kumar Wu Lu Farid Khan R. Schwindt A. Kuliev

Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 µm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency ( fT) of 85 GHz, and maximum frequency of oscillation ( fmax) of 151 GHz. The fT of 85 GHz and fmax of 151 GHz are the highest ever reported values for 0.25 µm gate-length GaN-based HEMTs.

Transconductance

Cutoff frequency

Oscillation (cell signaling)

10.1049/el:20020178

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Citations (16)

Nanoporous graphene materials by low-temperature vacuum-assisted thermal process for electrochemical energy storage

Journal of Power Sources (2015)

Hao Yang Santhakumar Kannappan Amaresh Samuthira Pandian Jae‐Hyung Jang Yun‐Sung Lee

Nanoporous

Graphene foam

10.1016/j.jpowsour.2015.03.015

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Citations (41)

Electronic structures of hydroxylated low index surfaces of rutile and anatase-type titanium dioxide

Physical Chemistry Chemical Physics (2022)

Wu Lu Lin Jin Linyuan Ren Qianni Li Xin Chi

Different surface planes of various types of titanium dioxide (TiO2) crystals have diverse catalysis effects on the splitting of H2O and H2 and the electronic structures of the formed hydroxylated TiO2 vary significantly. A series of sixteen types of hydroxylated TiO2 surfaces containing two types of hydroxyls (OH1 and OH2) on four kinds of low index surfaces [(001), (100), (101), and (110)] of two types of crystals [anatase (A) and rutile (R)] are studied using first-principles density functional theory calculations. The catalyzed splitting of H2O and H2 on the eight low index surfaces is compared using Gibbs free energy. The geometries and electronic structures including the total and partial density of states and the charge density distribution of the sixteen hydroxylated surfaces are systematically described. The electronic structures of R-101, R-001, A-110, A-100, and A-001 surfaces are more significantly influenced by hydroxylation than other surfaces and the effects of OH2 are larger than those of OH1. In particular, the band gap values decrease and a new electronic energy state appears in R-001-OH2 and A-100-OH2. A new electronic state appears in the middle of the bands of R-101 and A-110 surfaces upon hydroxylation. The electron spin balance at the edge of the conduction band minimum of A-001-OH2 is disturbed. This research can provide theoretical guidance for experimental researchers to design surface hydroxylated TiO2 materials with tunable electronic structures and high catalytic performance.

Rutile

Titanium Dioxide

Hydroxylation

10.1039/d1cp04729a

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Citations (10)

TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING

International Journal of High Speed Electronics and Systems (2004)

Hyeongnam Kim Jaesun Lee Wu Lu

Trapping effects are investigated to examine the post-gate annealing effects on AlGaN/GaN high-mobility electron transistors (HEMTs) using pulsed I-V and transient measurements. In the unannealed devices, shallow traps are identified, which have an activation of 38 meV at a drain bias of 7 V. The time constant of these traps is determined to be ~0.5 μs. Devices annealed at 400°C for 10 minutes have a significantly smaller number of traps. However, a small number of traps with a longer time constant of 9.2 μs are created or activated during post-gate annealing. 20-minute annealing at 400°C leads to the increase of the number of traps with emission time constants of 21.6 μs and 1.25 ms. The breakdown voltage improvement by post-gate annealing is attributed to the removal or significant reduction of the shallow level traps.

Time constant

10.1142/s0129156404002818

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Citations (1)

On-Chip Clonal Analysis of Glioma-Stem-Cell Motility and Therapy Resistance

Nano Letters (2016)

Daniel Gallego‐Perez Lingqian Chang Junfeng Shi Junyu Ma Sung-Hak Kim

Enhanced glioma-stem-cell (GSC) motility and therapy resistance are considered to play key roles in tumor cell dissemination and recurrence. As such, a better understanding of the mechanisms by which these cells disseminate and withstand therapy could lead to more efficacious treatments. Here, we introduce a novel micro-/nanotechnology-enabled chip platform for performing live-cell interrogation of patient-derived GSCs with single-clone resolution. On-chip analysis revealed marked intertumoral differences (>10-fold) in single-clone motility profiles between two populations of GSCs, which correlated well with results from tumor-xenograft experiments and gene-expression analyses. Further chip-based examination of the more-aggressive GSC population revealed pronounced interclonal variations in motility capabilities (up to ∼4-fold) as well as gene-expression profiles at the single-cell level. Chip-supported therapy resistance studies with a chemotherapeutic agent (i.e., temozolomide) and an oligo RNA (anti-miR363) revealed a subpopulation of CD44-high GSCs with strong antiapoptotic behavior as well as enhanced motility capabilities. The living-cell-interrogation chip platform described herein enables thorough and large-scale live monitoring of heterogeneous cancer-cell populations with single-cell resolution, which is not achievable by any other existing technology and thus has the potential to provide new insights into the cellular and molecular mechanisms modulating glioma-stem-cell dissemination and therapy resistance.

Temozolomide

clone (Java method)

10.1021/acs.nanolett.6b00902

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Citations (45)

Trap behavior in AlGaN/GaN HEMTs by post-gateannealing

Hyeongnam Kim Jaesun Lee Wu Lu

Trapping effects are investigated to examine the post-gate annealing effects on AlGaN/GaN high-mobility electron transistors (HEMTs) using pulsed I-V and transient measurements. In the unannealed devices, shallow traps are identified, which have an activation of 38 meV at a drain bias of 7 V. The time constant of these traps is determined to be -0.5 /spl mu/s. Devices annealed at 400 /spl deg/C for 10 minutes have a significantly smaller number of traps. However, a small number of traps with a longer time constant of 9.2 /spl mu/s are created or activated during post-gate annealing. 20-minute annealing at 400 /spl deg/C leads to the increase of the number of traps with emission time constants of 21.6 /spl mu/s and 1.25 ms. The breakdown voltage improvement by post-gate annealing is attributed to the removal or significant reduction of the shallow level traps.

Time constant

Wide-bandgap semiconductor

10.1109/lechpd.2004.1549686

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Citations (0)

Dielectrophoresis-assisted 3D nanoelectroporation for non-viral cell transfection in adoptive immunotherapy

Lab on a Chip (2015)

Lingqian Chang Daniel Gallego‐Perez Xi Zhao Paul Bertani Zhaogang Yang

Current transfection technologies lead to significant inter-clonal variations. Previously we introduced a unique electrotransfection technology, Nanochannel-Electroporation (NEP), which can precisely and benignly transfect small cell populations (~100-200 cells) with single-cell resolution. Here we report on the development of a novel 3D NEP system for large scale transfection. A properly-engineered array of nanochannels, capable of handling/transfecting ~60 000 cells cm(-2), was fabricated using cleanroom technologies. Positive dielectrophoresis was used to selectively position cells on the nanochannels, thus allowing highly efficient transfection. Single-cell dosage control was demonstrated using both small and large molecules, and different cell types. The potential clinical relevance of this system was tested with difficult-to-transfect natural killer cell suspensions, and plasmids encoding for the chimeric antigen receptor (CAR), a model of high relevance for adoptive immunotherapy. Our results show significantly higher CAR transfection efficiencies for the DEP-NEP system (>70% vs. <30%), as well as enhanced cell viabilities.

Dielectrophoresis

10.1039/c5lc00553a

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Citations (97)

Influence of channel length and layout on TID for 0.18 mu m NMOS transistors

《核技术》(英文版) (2013)

Xue Wu Wu Lu Xin Wang Qi Guo Chengfa He

Different channel lengths and layouts on 0.18 mu n NMOS transistors are designed for investigating the dependence of short channel effects (SCEs) on the width of shallow trench isolation (STI) devices and designing in radiation hardness. Results show that, prior to irradiation, the devices exhibited near-ideal I-V characteristics, with no significant SCEs. Following irradiation, no noticeable shift of threshold voltage is observed, radiation-induced edge-leakage current, however, exhibits significant sensitivity on TID. Moreover, radiation-enhanced drain induced barrier lowering (DIBL) and channel length modulation (CLM) effects are observed on short-channel NMOS transistors. Comparing to stripe-gate layout, enclosed gate layout has excellent radiation tolerance.

Shallow trench isolation

Channel length modulation

Radiation hardening

Drain-induced barrier lowering

10.13538/j.1001-8042/nst.2013.06.019

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Citations (2)

Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate

Solid-State Electronics (2003)

Jaesun Lee Dongmin Liu Zhaojun Lin Wu Lu J.S. Flynn

Transconductance

Cutoff frequency

Oscillation (cell signaling)

10.1016/s0038-1101(03)00245-4

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Citations (5)

Etching of Pyrex glass substrates by inductively coupled plasma reactive ion etching for micro/nanofluidic devices

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (2006)

Hyun Chul Jung Wu Lu Shengnian Wang L. James Lee Xin Hu

The inductively coupled plasma (ICP) reactive ion etching of Pyrex glass was carried out using SF6∕Ar plasmas. The etch rate and surface and sidewall smoothnesses were investigated systematically through their dependence on bias voltage, ICP power, pressure, flow rate, and cathode temperature. Near vertical sidewalls and smooth etched surfaces were obtained by optimized etching parameters. The maximum etch rate, 0.65μm∕min, was achieved at a pressure of 5mTorr, a bias of 720V, and an ICP power of 2500W. Microfluidic devices with various sizes on Pyrex glass have been designed and fabricated. Two types of electrokinetic flow patterns, which are extensional and rotational flows under different biases, have been successfully demonstrated with five cross microfluidic devices.

Plasma Etching

Borosilicate glass

10.1116/1.2388959

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Citations (13)