We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, carrier lifetime and strain effects on the bandgap energy.

Wide-bandgap semiconductor

Vapor–liquid–solid method

10.1109/ico-ip.2011.5953760

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Intermixing induced resonance shift in GaAs/Al/sub x/O/sub y/ DBR resonators

M.I. Cohen Hark Hoe Tan C. Jagadish

The effect of ion induced interdiffusion on the resonant wavelength of GaAs/Al/sub x/O/sub y/ DBRs is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to red-shift. Resonance shifts of greater than 30 nm were observed. A model is proposed to explain this behaviour. This model agrees well with previous lateral oxidation studies.

Blueshift

10.1109/commad.1998.791664

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Axial vs. Radial Junction Nanowire Solar Cell

arXiv (Cornell University) (2021)

Vidur Raj Hark Hoe Tan C. Jagadish

Both axial and radial junction nanowire solar cells have their challenges and advantages. However, so far, there is no review that explicitly provides a detailed comparative analysis of both axial and radial junction solar cells. This article reviews some of the recent results on axial and radial junction nanowire solar cells with an attempt to perform a comparative study between the optical and device behavior of these cells. In particular, we start by reviewing different results on how the absorption can be tuned in axial and radial junction solar cells. We also discuss results on some of the critical device concepts that are required to achieve high efficiency in axial and radial junction solar cells. We include a section on new device concepts that can be realized in nanowire structures. Finally, we conclude this review by discussing a few of the standing challenges of nanowire solar cells.

10.48550/arxiv.2103.13190

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Electrical isolation of n-type and p-type InP layers by proton bombardment

Journal of Applied Physics (2001)

H. Boudinov Hark Hoe Tan C. Jagadish

The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of ≅Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C.

Metastability

Thermal Stability

Resistive touchscreen

10.1063/1.1365063

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Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

Kial Douglas Stewart M. Buda J. Wong‐Leung Lan Fu C. Jagadish

In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared detector (QDIP) device is studied. Temperatures in the range of 700 - 900/spl deg/C for 60 s, typical of ion implantation induced interdiffusion, are used. Double crystal X-ray diffraction (DCXRD), photoluminescence (PL), cross sectional transmission electron microscopy (XTEM) and device electrical characteristics were used to monitor changes due to RTA. The QDIP devices had good PL signal which improved upon annealing. However the device performance after RTA was poor and DCXRD and XTEM results clearly indicate that strain relaxation is occurring. The role of strain relaxation on optical and electrical properties has been discussed.

10.1109/commad.2002.1237293

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TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells

Jin Zou D. Q. Cai D. J. H. Cockayne Sheng Yuan C. Jagadish

In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure.

10.1109/commad.1998.791662

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Advances in Materials Science: A special issue in honour of Prof CNR Rao

Journal of Solid State Chemistry (2021)

D. D. Sarma B. V. R. Chowdari Sean Hearne Mike Fitzsimmons C. Jagadish

Honour

10.1016/j.jssc.2021.122068

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A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon

M.D.H. Lay J. C. McCallum G. de M. Azevedo Prakash N. K. Deenapanray C. Jagadish

The effect of implantation angle on the profile of vacancy-related defects, represented by the divacancy and vacancy-phosphorus centres, in n-type <100> Cz-Si implanted with 450 keV P or 600 keV Si ions to a dose of 2 /spl times/ 10/sup -9/ ions/spl middot/cm/sup -2/ , has been examined using deep level transient spectroscopy depth profiling. Implants were performed with samples aligned with 10/spl deg/ twists from the [110] planar direction and various tilts from the <100> axis. The peak depth of the VP/V/sub 2/ profile exhibits a systematic variation with the implantation angle: shifting towards the surface, narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. For well-channeled 450 keV P ions, the peak in the defect profile is approximately 0.9 microns deeper than the peak in the vacancy profile predicted using the binary collision codes MARLOWE and Crystal-TCAS. The effect of the surface proximity on defect concentrations has been considered by comparing those profiles obtained for 450 keV P implanted samples with those of 600 keV Si implanted samples.

Deep-level transient spectroscopy

10.1109/commad.2002.1237284

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Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures

Conference on Optoelectronic and Microelectronic Materials and Devices (2010)

Dawei Liu Haroldo T. Hattori Lan Fu Hark Hoe Tan C. Jagadish

In this article, we show that the introduction of a spiral waveguide to a GaAs microdisk that works both as a waveguide and circular Bragg reflector can improve coupling efficiency to almost 90%. The same structure with the addition of a taper can couple up to 80% of the generated power into a slot waveguide.

Waveguide

Reflector (photography)

10.1109/commad.2010.5699784

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OPL volume 1408 Cover and Front matter

MRS Proceedings (2012)

Houssem Kallel A. Chehaidar Arnaud Arbouet T. Baron A. Potié

Front cover

10.1557/opl.2012.994

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