G. A. Shepelskiĭ

V.E. Lashkaryov Institute of Semiconductor Physics

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S. G. Gasan-Zade

V.E. Lashkaryov Institute of Semiconductor Physics

МВ

М. В. Стріха

V.E. Lashkaryov Institute of Semiconductor Physics

N. I. Tarbaev

Institute of Semiconductor Physics

E. A. Salkov

National Academy of Sciences of Ukraine

S. V. Staryi

V.E. Lashkaryov Institute of Semiconductor Physics

F. T. Vasko

Quick Reaction Corporation (United States)

S. G. Gassan-zade

V.E. Lashkaryov Institute of Semiconductor Physics

ВМ

В. М. Бондар

ETH Zurich

D. S. Lepsveridze

J. Schreiber

Cooperative Institutions

V.E. Lashkaryov Institute of Semiconductor Physics

National Academy of Sciences of Ukraine

Institute of Semiconductors

Institute of Semiconductor Physics

Charles University

Institute of Physics

Czech Academy of Sciences, Institute of Physics

Moscow Engineering Physics Institute

Russian Academy of Sciences

Lviv Polytechnic National University

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One-dimensional structures formed by low-temperature slip of dislocations that act as sources of dislocation absorption and emission in II–VI semiconductor crystals

Semiconductors (1998)

N. I. Tarbaev G. A. Shepelskiĭ

Cadmium sulfide

10.1134/1.1187442

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Citations (8)

Point and nanoscale defects in Cd(S, Se, Te) crystals induced by plastic deformation

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2010)

V. Babentsov Vitalii Boiko R. Grill J. Franc G. A. Shepelskiĭ

The effect of uniaxial plastic deformation, indentation, and scribing along the selected axes on the excitonic and deep level photoluminescence (PL) of CdS, CdSe, CdTe, and ternary CdSeTe compounds has been studied. Dislocations movement produces new near band-gap narrow PL lines, and changes initial wide PL bands (the deep level emission), in particular, a relative intensity increase or appearing of the near midgap 0.8 eV, 1.1 and 1.45 eV bands in CdTe, and corresponding PL bands in other II-VI compounds (CdS, CdSe, and CdSeTe) (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Cadmium telluride photovoltaics

Indentation

10.1002/pssc.200983213

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Citations (4)

Experimental evidence for the third level (А+) of Hg vacancy in Hg1−xCdxTe

Infrared Physics & Technology (2012)

G. A. Shepelskiĭ М. В. Стріха S. G. Gassan-zade

Acceptor

Mercury

Shallow donor

10.1016/j.infrared.2012.07.009

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Citations (0)

<title>Piezo-optic diagnostic of elastic tension and identification of defect types in CdTe by examination of exciton-defect complexes</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1994)

B. E. Pesetsky G. A. Shepelskiĭ М. В. Стріха N. I. Tarbaev

It has been shown the evidence for the energy location of low-temperature photoluminescence (PL) of bound exciton complexes lines can be used as a technique of internal stress diagnostic in high quality bulk CdTe the substrates material for epitaxial growth photosensitive HgCdTe layers. The obtained deformation dependencies of the energy location and PL lines intensities allow us to estimate the value and sign of elastic stresses as well as defects type.

Cadmium telluride photovoltaics

Tension (geology)

Elastic energy

10.1117/12.191980

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Physical Properties of A_IIB_VI Semiconductor Crystals after Plastic Deformation at Low Temperature

De Gruyter eBooks (1988)

N. I. Tarbaev J. Schreiber G. A. Shepelskiĭ

10.1515/9783112495667-010

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Physical Properties of A_nB_VI Semiconductor Crystals after Plastic Deformation at Low Temperature

De Gruyter eBooks (1988)

N. I. Takbaev J. Schreiber G. A. Shepelskiĭ

10.1515/9783112472880-009

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Polarization-dependent photoconductivity in uniaxially deformed narrow-gap semiconductors

Semic (1995)

F. T. Vasko S. G. Gasan-Zade М. В. Стріха G. A. Shepelskiĭ

Photoconductivity

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Enhancement of quantum efficiency of narrow-gap semiconductors infrared emission

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2001)

S. G. Gasan-Zade A. G. Kollyukh L. F. Linnik G. A. Shepelskiĭ S. V. Staryj

It was shown, that the uniaxial compression leads to the increase of Auger lifetimes in the narrow gap semi-conductors, and to the decrease of the radiative band to band lifetimes. The quantum efficiency can be increased up to 1 on the base of this effect. Experimental results are obtained for InSb an HgCdTe.

Quantum Efficiency

Auger effect

Narrow-gap semiconductor

10.1117/12.417776

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Electrical activity of dislocations and point defects of deformation origin in CdxHg1−x Te crystals

Semiconductors (2003)

S. G. Gasan-Zade S. V. Staryi М. В. Стріха G. A. Shepelskiĭ

Crystal (programming language)

Atmospheric temperature range

10.1134/1.1538531