Lixing Fu

The Ohio State University

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Jin Wang

The Ohio State University

Chengcheng Yao

Beijing Friendship Hospital

Xuan Zhang

Affiliated Zhongshan Hospital of Dalian University

He Li

Hebei University of Science and Technology

Feng Guo

Southwest University of Science and Technology

Cong Li

Xidian University

Mark J. Scott

Miami University

Yafeng Wang

Northwestern Polytechnical University

Xuan Zhang

Chinese Academy of Sciences

Xintong Lu

Ningbo University

Cooperative Institutions

Oak Ridge National Laboratory

University of Tennessee at Knoxville

United States Naval Research Laboratory

The Ohio State University

Arkansas Power Electronics International

University of California, Berkeley

Naval Postgraduate School

Chinese Academy of Sciences

State Grid Corporation of China (China)

National Transportation Research Center

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A high boost ratio bidirectional isolated DC-DC converter for wide range low voltage high current applications

Cong Li Luis Herrera Jizhou Jia Lixing Fu Yi Huang

This paper introduces a high boost ratio, bidirectional, isolated, dc/dc converter designed as an interface between low voltage, high current dc sources and 24 V dc systems. This converter realizes bidirectional power flow with two main switches and operates under a wide input voltage range, from 1.5 V to 12 V, with an input current as high as 300 A. An active snubber circuit is utilized to recycle the energy stored in the leakage inductor of transformer and realize zero voltage switching (ZVS) off for one main switch. The zero current switching (ZCS) on of this switch is achieved by using transformer leakage inductor, thus no additional components are needed. Furthermore, the power loss of another main switch is minimized by operating it in the Synchronous Rectification mode. Complete circuit description and operation principles are provided in this paper. A 1.2 kW lab prototype has been built and tested with full power rating. Both simulation results and experimental results are presented to verify proposed functions.

Snubber

10.1109/apec.2012.6165872

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Citations (10)

Design considerations for wide bandgap based motor drive systems

Mark J. Scott Lixing Fu Chengcheng Yao Xuan Zhang Longya Xu

The backbone of traction drive systems for electrified vehicles is based on the insulated gate bipolar junction transistors (IGBT) created from silicon (Si). Over the last several years, switching devices made from silicon carbide (SiC) and gallium nitride (GaN) have become available. This has resulted in the construction of power electronic systems with greater power densities and better efficiency over similarly rated Si based versions. Yet some hurdles still remain prior to wide spread adoption of these components in automotive power electronics. The following paper reviews the current state-of-art for SiC and GaN based power devices. Challenges in their implementation and barriers to commercialization are presented. This information is supplemented with test results from a thermal investigation. The impact of high speed wide bandgap power devices on the reflected wave phenomenon is also explored.

Insulated-gate bipolar transistor

Power Electronics

Wide-bandgap semiconductor

Automotive electronics

Power module

Gate driver

10.1109/ievc.2014.7056214

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Citations (8)

Electromagnetic noise coupling and mitigation for fast response on-die temperature sensing in high power modules

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) (2016)

Chengcheng Yao Pengzhi Yang Mingzhi Leng He Li Lixing Fu

A heavy low pass filter is usually applied to an on-die temperature sensor's output to filter out the strong noises during switching transients. Aiming at high bandwidth junction temperature sensing, this paper evaluates the electromagnetic noise coupling of an on-die temperature sensing diode in a high power module. Challenges of fast response on-die temperature sensing are reviewed first. Noise coupling mechanisms are analyzed under different grounding configurations and operating conditions. Based on the analysis, a method is proposed to estimate the parasitic capacitance between the sensor and the power device. Special attention has been paid to achieve a high bandwidth and noise immunity test setup. With that, the sensor coupled noises are evaluated in experiments and compared with the model. Noise propagation impedance compensation is applied and verified by experiment. Considerations of sensing circuit design are also discussed. A 100 kHz low pass filter is used to deal with the residual noises during switching transients. With the designed sensing circuitry, short circuit tests are conducted to demonstrate sensor's dynamic response.

Parasitic capacitance

10.1109/apec.2016.7468074

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Citations (3)

The evaluation and application of wide bandgap power devices

Lixing Fu Xuan Zhang Mark J. Scott Chengcheng Yao Jin Wang

This paper presents an overview of wide bandgap (WBG) power devices. The development and challenges of silicon carbide (SiC) and gallium nitride (GaN) power devices are summerized. A comprehensive evaluation of the performance of different devices is conducted, including static characterization and dynamic switching related tests. The paper also demonstrates the application of WBG devices in power electronic circuits. The testing results are provided to show the performance of WBG devices in different aspects.

Wide-bandgap semiconductor

Power Electronics

Characterization

10.1109/itec-ap.2014.6941195

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Citations (12)

Overview and evaluation methodologies of high voltage power devices

Lixing Fu He Li Xintong Lu Jin Wang

This paper presents a brief overview, and comprehensive methodologies for evaluating high voltage (HV) power electronic devices. The features of different devices are presented, and the future development trend of power devices is analyzed. To characterize an HV device, a comprehensive methodology including static and switching tests are introduced. The static characterization develops measurement at HV conditions, and the switching characterization focuses on precise measurement and safety considerations in dynamic switching, as well as the design of an HV, high frequency inductor.

High Voltage

Characterization

10.1109/ipmhvc.2014.7287333

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Citations (3)

LLC共振回路と2準二重アクティブブリッジ回路の比較研究【Powered by NICT】

IEEE Conference Proceedings (2016)

Hu Boxue Zhang Xuan Lixing Fu Li He Yao Chengcheng

Source

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An isolated hybrid switched C-L DC-DC circuit with high step-up ratio and reduced switch voltage stress

2022 IEEE Energy Conversion Congress and Exposition (ECCE) (2014)

Cong Li Rachid Darbali Zamora Chengcheng Yao Lixing Fu He Li

10.1109/ecce.2014.6954138

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Device loss comparison of GaN device based LLC, dual active bridge and phase shift quasi switched capacitor circuit

2022 IEEE Energy Conversion Congress and Exposition (ECCE) (2016)

Boxue Hu Xuan Zhang Lixing Fu He Li Yousef Abdullah

Gallium Nitride (GaN) power devices become commercially available in recent years and they have demonstrated great potential in DC power supply applications. In this paper, the device loss of three GaN device based isolated DC/DC circuits, LLC circuit, dual active bridge (DAB) circuit and phase shift quasi switched capacitor (QSC) circuit, is investigated and compared using telecom power supply application as an example. The device loss of the three circuits at various load and operation frequency conditions is calculated and compared for a 1 kW, 400 to 48V application case. The comparison results show that phase shift QSC circuit is a promising circuit candidate for DC power supply applications. A 1 kW, 0.5 MHz, 400-48 V GaN device based phase shift QSC converter prototype is built to verify the analysis results.

10.1109/ecce.2016.7855043

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Citations (8)

Evaluations and applications of GaN HEMTs for power electronics

He Li Chengcheng Yao Lixing Fu Xuan Zhang Jin Wang

This paper presents an overview of the latest Gallium Nitride High Electron Mobility Transistor (GaN HEMT) technology. The latest development and challenges of 30 V to 650 V GaN HEMTs are summarized. The evaluation methodology of the GaN HEMT is presented, including static characterization and dynamic characterization. The paper also demonstrates the application of GaN HEMTs developed by Center for High Performance Power Electronics (CHPPE). Various high efficiency high power density circuit prototypes based on GaN HEMTs are presented.

Power Electronics

Wide-bandgap semiconductor

Characterization

Power density

10.1109/ipemc.2016.7512348

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Citations (34)

Application reliability validation of GaN power devices

2021 IEEE International Electron Devices Meeting (IEDM) (2016)

S.R. Bahl Jungwoo Joh Lixing Fu A. Sasikumar Tathagata Chatterjee

Standard qualification methodology or "qual" does not specify product-level testing due to the diverse range of products and use conditions, a limited ability for system-level acceleration, and complication from system-level failures. This is a concern for emerging power-management technologies, since the fundamental switching transitions are not covered. We show that hard-switching with the well-known double-pulse tester is predictive of device performance under system-level testing. It simplifies the problem of product reliability testing to one of a device and a tester. It enables us to detect devices that pass qual but perform poorly in application. As a result, our devices pass qual and perform well in application.

10.1109/iedm.2016.7838461

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Citations (39)