Yibin Jiang

Northeast Forestry University

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Hoi Sing Kwok

Hong Kong University of Science and Technology

Ben Zhong Tang

University of Hong Kong

Shuming Chen

Southern University of Science and Technology

Bairong He

Nanfang Hospital

Herman H. Y. Sung

Hong Kong University of Science and Technology

Zujin Zhao

South China University of Technology

Ian D. Williams

Hong Kong University of Science and Technology

Huayu Qiu

Hangzhou Normal University

Ping Lü

Jilin University

Han Nie

Second Affiliated Hospital of Nanchang University

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University of Hong Kong

Hong Kong University of Science and Technology

Chinese Academy of Sciences

South China University of Technology

Xiamen University

Southern University of Science and Technology

Zhejiang University

Peking University

Collaborative Innovation Center of Chemistry for Energy Materials

Zhejiang University of Technology

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P‐144: Organic Light‐Emitting Diodes Fabricated on Nanostructured AZO: A Low‐Cost Way towards Enhanced Light Extraction for Large Area Lighting Application

SID Symposium Digest of Technical Papers (2014)

Yibin Jiang Guijun Li He Li Shuming Chen Hoi Sing Kwok

Abstract Organic light‐emitting diodes (OLEDs) were fabricated on nanostructured aluminum doped zinc oxide (AZO). The nanostructured AZO was formed by selectively etching as‐prepared AZO film. The nanostructured AZO serves not only as low‐cost indium‐free anode but also as internal light extraction structure. OLEDs on it showed a 25.7% efficiency enhancement compared to the conventional ones.

10.1002/j.2168-0159.2014.tb00405.x

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Frontiers in Electrical Engineering Vol. 1: Active-Matrix Organic Light-Emitting Display Technologies

Shuming Chen Jianning Yu Yibin Jiang Rongsheng Chen Tsz Kin Ho

Matrix (chemical analysis)

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Expression of Photoreceptor-Specific Nuclear Receptor NR2E3 in Rod Photoreceptors of Fetal Human Retina

Investigative Ophthalmology & Visual Science (2004)

Keely M. Bumsted O’Brien Hong Cheng Yibin Jiang Dorothea Schulte Anand Swaroop

To study the physiological function of NR2E3 and possible molecular mechanisms underlying enhanced short-wavelength cone syndrome (ESCS) pathogenesis in developing human retina, and to compare its expression to that of Neural Retina Leucine zipper (NRL), a transcription factor essential for rod differentiation.Expression of NR2E3, a photoreceptor-specific orphan nuclear receptor, was examined in human retinas between fetal weeks (Fwk) 9 to 22 by reverse transcription-polymerase chain reaction (RT-PCR) and in situ hybridization. Both NR2E3 and NRL expression patterns were followed by immunocytochemistry. The human retina develops in a central to peripheral pattern, in which a protein may take weeks to be expressed throughout the entire retina. This allowed a detailed temporal analysis of NR2E3 and NRL expression.NR2E3 expression was detected shortly after the appearance of NRL in putative immature rods on the foveal edge at Fwk 11.7. Expression of both markers was maintained in rod opsin expressing fetal photoreceptors. NR2E3 expression was not detected in either long/medium- or short-wavelength cones. Its absence from cones was also supported by the position of labeled nuclei deep in the outer nuclear layer, and by the absence of NR2E3 from the fovea.A role for NR2E3 in the rod developmental pathway is suggested. The closely related expression patterns of NRL and NR2E3 supported an interactive function, where both transcription factors determine the rod fate and suppress immature rods from adopting the S-cone fate.

Outer nuclear layer

10.1167/iovs.03-1317

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39.1: Invited Paper: Organic Color‐Conversion Materials for Full‐Color MicroLED Displays

SID Symposium Digest of Technical Papers (2021)

Shou‐Cheng Dong Yibin Jiang Ching W. Tang

10.1002/sdtp.14454

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34.4: 3‐inch, 3000‐ppi Silicon Nitride Masks for Direct Patterning of OLED Microdisplays

SID Symposium Digest of Technical Papers (2022)

Shou‐Cheng Dong Sunbin Deng Jiye Yang Yibin Jiang Ching W. Tang

3‐inch, 3000‐ppi silicon nitride masks (SiNMs) have been achieved for the direct patterning of ultrahigh‐resolution RGB side‐by‐side OLED microdisplays.

10.1002/sdtp.15950

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Naphthalene-substituted 2,3,4,5-tetraphenylsiloles: synthesis, structure, aggregation-induced emission and efficient electroluminescence

Journal of Materials Chemistry (2012)

Tao Jiang Yibin Jiang Wei Qin Shuming Chen Yahong Lu

Two thermally stable naphthalene-substituted 2,3,4,5-tetraphenylsiloles, 1,1-dimethyl-2,5-bis[4-(naphthalen-1-yl)phenyl]-3,4-diphenylsilole (D-1-NpTPS) and 1,1-dimethyl-2,5-bis[4-(naphthalen-2-yl)phenyl]-3,4-diphenylsilole (D-2-NpTPS), have been synthesized and fully characterized. D-2-NpTPS shows redder absorption and emission than D-1-NpTPS due to the better conjugation between naphthalen-2-yl groups and phenyl rings at the 2,5-positions of the silole core. While they are weakly fluorescent in solutions, strong luminescence is induced when aggregated in poor solvents or fabricated into solid films, with high fluorescence quantum yields up to 99%, demonstrating their aggregation-induced emission (AIE) feature. Efficient non-doped organic light-emitting diodes utilizing D-1-NpTPS and D-2-NpTPS as light-emitting layers are fabricated. Remarkably high electroluminescence efficiencies of 10.5 cd A−1, 7.3 lm W−1, and 3.2% are acheived by the D-2-NpTPS device.

Quantum Efficiency

10.1039/c2jm34621d

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A Low‐Cost Nano‐modified Substrate Integrating both Internal and External Light Extractors for Enhancing Light Out‐Coupling in Organic Light‐Emitting Diodes

Advanced Optical Materials (2014)

Yibin Jiang Shuming Chen Guijun Li He Li Hoi Sing Kwok

Quantum Efficiency

10.1002/adom.201400012

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Fabrication of highly efficient quantum-dots light-emitting diodes (QLEDs) : materials and device structure

Yibin Jiang

Over the past years, QLEDs technology has experienced a huge development in aspects of fabrication process, device structure, QDs and CTLs materials, and patterning method. With the EQEs of RGB QLEDs based on cadmium compound II-VI QDs all exceeding 10 % and even approaching that of state-of-the-art phosphorescent OLEDs, QLEDs technology becomes a competitive rival to OLEDs technology for future thin, flexible and vivid displays. However, there still exist a few challenges needed to be overcome so that efficient QLEDs can be really applied in commercial displays. The first challenge is to maintain balanced carrier injection into QDs since Cd-based QDs’ intrinsic deep conduction band and valence band give rise to easy electron injection but relatively hard hole injection, which...[ Read more ]

10.14711/thesis-991012530269103412

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Creation of Bifunctional Materials: Improve Electron‐Transporting Ability of Light Emitters Based on AIE‐Active 2,3,4,5‐Tetraphenylsiloles

Advanced Functional Materials (2014)

Long Chen Yibin Jiang Han Nie Ping Lü Herman Ho Yung Sung

2,3,4,5‐Tetraphenylsiloles are excellent solid‐state light emitters featured aggregation‐induced emission (AIE) characteristics, but those that can efficiently function as both light‐emitting and electron‐transporting layers in one organic light‐emitting diode (OLED) are much rare. To address this issue, herein, three tailored n‐type light emitters comprised of 2,3,4,5‐tetraphenylsilole and dimesitylboryl functional groups are designed and synthesized. The new siloles are fully characterized by standard spectroscopic and crystallographic methods with satisfactory results. Their thermal stabilities, electronic structures, photophysical properties, electrochemical behaviors and applications in OLEDs are investigated. These new siloles exhibit AIE characteristics with high emission efficiencies in solid films, and possess lower LUMO energy levels than their parents, 2,3,4,5‐tetraphenylsiloles. The double‐layer OLEDs [ITO/NPB (60 nm)/silole (60 nm)/LiF (1 nm)/Al (100 nm)] fabricated by adopting the new siloles as both light emitter and electron transporter afford excellent performances, with high electroluminescence efficiencies up to 13.9 cd A –1 , 4.35% and 11.6 lm W –1 , which are increased greatly relative to those attained from the triple‐layer devices with an additional electron‐transporting layer. These results demonstrate effective access to n‐type solid‐state emissive materials with practical utility.

HOMO/LUMO

10.1002/adfm.201303867

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61‐2: 2‐inch, 2,000‐ppi Silicon Nitride Mask for Patterning Ultra‐High‐Resolution OLED Displays

SID Symposium Digest of Technical Papers (2020)

Yibin Jiang Bryan Siu Ting Tam Shou‐Cheng Dong Ching W. Tang

We developed a 2‐inch, 2000 ppi shadow mask based on micronthin, free‐standing silicon nitride (SiN x ) membrane for patterning OLED displays. Its layer composition and fabrication process were optimized to yield an ultra‐flat, self‐tensioned silicon nitride mask (SNM) that can achieve a submicron shadow distance limited only by the thickness of the membrane in line‐of‐sight vacuum depositions.

Shadow mask

10.1002/sdtp.14018

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