G. Lilienkamp

Clausthal University of Technology

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Winfried Daum

Clausthal University of Technology

E. Bauer

TU Wien

Thomas Schmidt

Fritz Haber Institute of the Max Planck Society

Benjamin Borkenhagen

Clausthal University of Technology

C. Kozioł

Clausthal University of Technology

R. Imbihl

Leibniz University Hannover

A. Waag

Technische Universität Braunschweig

W. Daum

Clausthal University of Technology

Lorenzo Caccamo

Technische Universität Braunschweig

Wei Han

First People's Hospital of Kunshan

Cooperative Institutions

Clausthal University of Technology

Technische Universität Braunschweig

Fritz Haber Institute of the Max Planck Society

Leibniz University Hannover

Max Planck Society

Universitat de Barcelona

Helmholtz-Zentrum Berlin für Materialien und Energie

Institut de Nanociència i Nanotecnologia de la Universitat de Barcelona

Technische Universität Ilmenau

Friedrich-Alexander-Universität Erlangen-Nürnberg

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High-density array of Au nanowires coupled by plasmon modes

Acta Physica Sinica (2012)

Hongdan Yan P. Lemmens Johannes Ahrens Martin Br ring Sven Burger

Au nanowire arrays with high aspect ratios are prepared in anode aluminum oxide templates by electrochemical deposition. The obtained structures are investigated by scanning Auger microscopy. Surface plasmon resonances of Au nanowire arrays induce a transverse mode (T mode) and a longitudinal mode (L mode) in the optical absorption, which indicates the strong anisotropy of the Au nanowires. The L mode intensity is related to the angle and polarization of the incident light. The L mode position shows a shift with the increase of aspect ratio of the nanowires. The plasmon coupling between Au nanowires is compared with the H-aggregation of organic chromophores. The blue shift of the L mode in the arrays compared with a single nanowire is induced by multi-coupling of the electromagnetic field between neighbouring nanowires. A finite element method is used to simulate the electric field distributions of a single Au nanowire and an array of plasmonically coupled wires.

Localized surface plasmon

Transverse mode

10.7498/aps.61.237105

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Citations (7)

Recent Advances in LEEM/PEEM for Structural and Chemical Analysis

Springer eBooks (1997)

E. Bauer Torsten Franz C. Kozioł G. Lilienkamp Thomas Schmidt

10.1007/978-94-011-5724-7_5

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Citations (10)

MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure

Nanotechnology (2018)

Matthias Steidl Klaus Schwarzburg B. Galiana Thomas Kups Oliver Supplie

Dilute nitride III-V nanowires (NWs) possess great potential as building blocks in future optoelectronical and electrochemical devices. Here, we provide evidence for the growth of GaP/GaPN core-shell NWs via metalorganic vapor phase epitaxy, both on GaP(111)B and on GaP/Si(111) hetero-substrates. The NW morphology meets the common needs for use in applications, i.e. they are straight and vertically oriented to the substrate as well as homogeneous in length. Moreover, no parasitical island growth is observed. Nitrogen was found to be incorporated on group V sites as determined from transmission electron microscopy (TEM) and Raman spectroscopy. Together with the incorporation of N, the NWs exhibit strong photoluminescence in the visible range, which we attribute to radiative recombination at N-related deep states. Independently of the N incorporation, a peculiar facet formation was found, with {110} facets at the top and {112} at the bottom of the NWs. TEM reveals that this phenomenon is related to different stacking fault densities within the zinc blende structure, which lead to different effective surface energies for the bottom and the top of the NWs.

Stacking fault

Facet (psychology)

Faceting

10.1088/1361-6528/aaf607

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High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

Journal of Applied Physics (2010)

Henning Döscher G. Lilienkamp P. Iskra W. Daum Gundula Helsch

ZrO 2 films with a sub-10-nm thickness and a roughness of about 0.2 nm have been prepared on Si(001) by a sol-gel process based on zirconium-(IV)-n-propoxide. The topography of the obtained samples has been controlled by atomic force microscopy. Chemical composition and interface reactions of the deposited films have been studied by x-ray photoemission spectroscopy and Auger electron spectroscopy. The ZrO2 films are stable against heating (up to 700 °C) in a moderate oxygen atmosphere (2×10−5 mbar oxygen partial pressure). Minor changes in the surface composition occur after rapid annealing up to 1000 °C.

Auger electron spectroscopy

Electron spectroscopy

10.1063/1.3340830

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Citations (14)

Concept and Design of the SMART Spectromicroscope at BESSY II

Springer eBooks (1998)

W. Engel Ralf Degenhardt A.M. Bradshaw Wolfgang Erlebach K. Ihmann

Monochromator

Undulator

Photoelectric effect

Monochromatic color

10.1007/978-3-642-72106-9_28

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Citations (0)

Single-Particle Spectroscopy of Supported Silver Clusters on Silicon: Substrate Effects on Localized Surface Plasmons

Plasmonics (2019)

Klaus Stallberg G. Lilienkamp W. Daum

Nanoclusters

Localized surface plasmon

Nanophotonics

10.1007/s11468-019-00944-7

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Citations (2)

SMART: An Aberration-Corrected XPEEM/LEEM with Energy Filter

Surface Review and Letters (1998)

R. Wichtendahl R. Fink H. Kuhlenbeck D. Preikszas H. Rose

A new UHV spectroscopic X-ray photoelectron emission and low energy electron microscope is presently under construction for the installation at the PM-6 soft X-ray undulator beamline at BESSY II. Using a combination of a sophisticated magnetic beam splitter and an electrostatic tetrode mirror, the spherical and chromatic aberrations of the objective lens are corrected and thus the lateral resolution and sensitivity of the instrument improved. In addition a corrected imaging energy filter (a so-called omega filter) allows high spectral resolution (ΔE=0.1 eV ) in the photoemission modes and back-ground suppression in LEEM and small-spot LEED modes. The theoretical prediction for the lateral resolution is 5 Å; a realistic goal is about 2 nm. Thus, a variety of electron spectroscopies (XAS, XPS, UPS, XAES) and electron diffraction (LEED, LEEM) or reflection techniques (MEM) will be available with spatial resolution unreached so far.

Chromatic aberration

Undulator

Photoemission electron microscopy

10.1142/s0218625x98001584

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Citations (83)

Lithium Transport through Nanosized Amorphous Silicon Layers

Nano Letters (2013)

Erwin Hüger Lars Dörrer Johanna Rahn Tobias Panzner Jochen Stahn

Lithium migration in nanostructured electrode materials is important for an understanding and improvement of high energy density lithium batteries. An approach to measure lithium transport through nanometer thin layers of relevant electrochemical materials is presented using amorphous silicon as a model system. A multilayer consisting of a repetition of five [6LiNbO3(15 nm)/Si (10 nm)/natLiNbO3 (15 nm)/Si (10 nm)] units is used for analysis, where LiNbO3 is a Li tracer reservoir. It is shown that the change of the relative 6Li/7Li isotope fraction in the LiNbO3 layers by lithium diffusion through the nanosized silicon layers can be monitored nondestructively by neutron reflectometry. The results can be used to calculate transport parameters.

Nanometre

10.1021/nl304736t

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Citations (48)

Novel Approaches Towards Highly Selective Self-Powered Gas Sensors

Procedia Engineering (2015)

Martin Hoffmann Olga Casals Alaaeldin Gad Leonhard Mayrhofer Cristian Fàbrega

The prevailing design approaches of semiconductor gas sensors struggle to overcome most of their current limitations such as poor selectivity, and high power consumption. Herein, a new sensing concept based on devices that are capable of detecting gases without the need of any external power sources required to activate interaction of gases with sensor or to generate the sensor read out signal. Based on the integration of complementary functionalities (namely; powering and sensing) in a singular nanostructure, self-sustained gas sensors will be demonstrated. Moreover, a rational methodology to design organic surface functionalization that provide high selectivity towards single gas species will also be discussed. Specifically, theoretical results, confirmed experimentally, indicate that precisely tuning of the sterical and electronic structure of sensor material/organic interfaces can lead to unprecedented selectivity values, comparable to those typical of bioselective processes. Finally, an integrated gas sensor that combine both the self-powering and selective detection strategies in one single device will also be presented.

Rational design

SIGNAL (programming language)

Surface Modification

10.1016/j.proeng.2015.08.752

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Citations (5)

Non-Destructive, Large-Scale Imaging of Anti-Phase Disorder in GaP Epilayers on Si(001) Using Low-Energy Electron Microscopy

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2012)

Benjamin Borkenhagen G. Lilienkamp Winfried Daum Henning Döscher Thomas Hannappel

Abstract not Available.

Low-energy electron microscopy

10.1149/ma2012-01/17/786

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Citations (0)