Jan Grym

Czech Academy of Sciences, Institute of Photonics and Electronics

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Roman Yatskiv

Czech Academy of Sciences, Institute of Photonics and Electronics

J. Vaniš

Czech Academy of Sciences, Institute of Photonics and Electronics

KŽ

K. Žďánský

Czech Academy of Sciences, Institute of Photonics and Electronics

Stanislav Tiagulskyi

Czech Academy of Sciences, Institute of Photonics and Electronics

OČ

Ondřej Černohorský

Czech Academy of Sciences, Institute of Photonics and Electronics

J. Zavadil

Czech Academy of Sciences, Institute of Rock Structure and Mechanics

O. Procházková

Czech Academy of Sciences

P. Gladkov

Czech Academy of Sciences, Institute of Photonics and Electronics

Nikola Bašinová

Czech Academy of Sciences, Institute of Photonics and Electronics

D. Nohavica

Czech Academy of Sciences, Institute of Photonics and Electronics

Cooperative Institutions

Czech Academy of Sciences

Czech Academy of Sciences, Institute of Photonics and Electronics

National Academy of Sciences of Ukraine

V.E. Lashkaryov Institute of Semiconductor Physics

Czech Academy of Sciences, Institute of Physics

Charles University

University of Chemistry and Technology, Prague

Czech Technical University in Prague

Czech Academy of Sciences, Institute of Analytical Chemistry

Institute of Semiconductor Physics

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Defect-mediated energy transfer in ZnO thin films doped with rare-earth ions

Journal of Luminescence (2022)

Roman Yatskiv Jan Grym Nikola Bašinová Šárka Kučerová J. Vaniš

10.1016/j.jlumin.2022.119462

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Citations (12)

Impact of Pr on the properties of InP based layers for light sources and detectors

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2009)

O. Procházková Jan Grym J. Zavadil K. Žďánský Roman Yatskiv

Abstract We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 10 14 cm –3 . Three types of p‐n junction based radiation detection structures were prepared and their detection performance was assessed by using α‐particles emitted from the 241 Am radioactive source. The type III structure, utilizing the p‐n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. Pr admixture was also exploited in the preparation of quaternary GaInAsP(Pr) active region in the double heterostructure GaInAsP/InP emitting at 1200 nm. Purification effect of Pr addition is demonstrated by measuring impurity concentrations deduced from C‐V curves and by low temperature PL spectra. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

10.1002/pssc.200982567

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Citations (1)

Room temperature particle detectors based on indium phosphide

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (2009)

Roman Yatskiv Jan Grym K. Žďánský L. Pekárek

Indium phosphide

Particle (ecology)

Alpha particle

Particle detector

10.1016/j.nima.2009.10.172

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InP based semiconductor structures for radiation detection

Journal of Materials Science Materials in Electronics (2007)

O. Procházková Jan Grym L. Pekárek J. Zavadil K. Žďánský

10.1007/s10854-007-9407-1

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Growth of InP crystals with rare-earth elements

Roman Yatskiv Jan Grym K. Žďánský L. Pekárek J. Zavadil

We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low-temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP.

Getter

10.1109/iciprm.2009.5012450

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Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods

physica status solidi (a) (2017)

Roman Yatskiv Stanislav Tiagulskyi Jan Grym Ondřej Černohorský

Rectifying ZnO homojunctions are fabricated by simple wet chemistry methods. The p–n junction is formed between a p‐type nanostructured seed layer deposited by sol–gel method on phosphorus doped Si substrates and an array of n‐type nanorods grown by chemical bath deposition. The p‐type conductivity in the nanostructured layer is achieved by thermal diffusion of phosphorus from the Si substrate. The diffusion of phosphorus is supported by the observation of optical transitions related to neutral acceptor bound exciton in low‐temperature photoluminescence spectra. The p–n junction shows a high value of rectification ratio. Charge transport through the p‐n junction is discussed in terms of non‐ideal interface.

Nanorod

Acceptor

10.1002/pssa.201700592

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Spectroscopic properties of nanostructured molybdenum oxysulfide deposits fabricated by MoO3 evaporation in H2S

Materials Letters (2020)

Vladislav Dřı́nek Roman Yatskiv Mariana Klementová Radek Fajgаr Věra Jandová

10.1016/j.matlet.2020.128075

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Lattice-Mismatched Epitaxial Growth On Porous III-V Substrates

ECS Transactions (2013)

Jan Grym P. Gladkov J. Vaniš E. Hulicius J. Pangrác

We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with lattice mismatched In(x)Ga(1-x)As layers.

Lattice (music)

Vapor phase

10.1149/05808.0053ecst

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Separation of carboxylic acids in human serum by isotachophoresis using a commercial field-deployable analytical platform combined with in-house glass microfluidic chips

Analytica Chimica Acta (2012)

Petr Šmejkal Michael C. Breadmore Rosanne M. Guijt Jan Grym František Foret

Isotachophoresis

Microfluidic chip

Lab-on-a-Chip

10.1016/j.aca.2012.10.022

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Citations (17)

HYDROGEN SENSING AND PHOTOELECTRIC PROPERTIES OF GRAPHITE/ZNO NANORODS JUNCTION

Roman Yatskiv M. Verde Jan Grym

Hydrogen sensing and photoelectric properties of a graphite/ZnO nanorods (NRs) junction were investigated. The graphite/ZnO NRs junction was prepared by low temperature hydrothermal growth and deposition of colloidal graphite. The proposed hydrogen sensor showed response to 1000ppm hydrogen in nitrogen even at room temperature.

Nanorod

Photoelectric effect

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