Takahisa Okuda

National Defence Academy

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

n-InSb Point Contact Warm Carrier Infrared Laser Detectors

Japanese Journal of Applied Physics (1988)

Yoshizumi Yasuoka Takahisa Okuda Narumi Inoue

Point-contact warm carrier devices were fabricated using n-type InSb instead of p-type Ge. The incident angle dependence of the detected voltage was measured at 10.6 µm and 118 µm laser radiations. It was confirmed that the detected signal of the fabricated devices was due to the induced current by antennae and not due to the photon-drag effects.

SIGNAL (programming language)

Infrared detector

10.1143/jjap.27.l886

Cite

Citations (12)

Magnetic and Magnetooptical Properties of Bi3Fe5O12 (100) Thin Film Prepared By Pulsed Laser Deposition

Materials science forum (2001)

N. Adachi Vasyl Denysenkov S. I. Khartsev А. М. Гришин Takahisa Okuda

10.4028/www.scientific.net/msf.373-376.493

Cite

Citations (0)

Harmonic Mixing at 28THz CO2 Laser Frequency with Point-Contact Warm Carrier Devices.

The Review of Laser Engineering (1992)

Yoshizumi Yasuoka Takahisa Okuda

Properties of point-contact warm carrier devices, when used as harmonic mixers in the CO2 laser frequency region, were investigated. Harmonic mixing experiments were carried out by using the 8.93GHz microwave source and the two CO2 lasers operating at different frequencies. The results showed that the point-contact warm carrier device works as a detector and mixer at CO2 laser frequency as does the W-Ni point-contact MOM diode.

Harmonic

10.2184/lsj.20.12_963

Cite

Citations (5)

n-InSb Point Contact Warm Carrier Infrared Laser Detectors : Waves, Optics and Quantum Electronics

Japanese Journal of Applied Physics (1988)

Yoshizumi Yasuoka Takahisa Okuda Narumi Inoue

Source

Cite

Citations (0)

Isolator-free 2.5 Gb/s, 45 km Transmission Characteristics in PC-LD-s from -40℃ to +80℃ under -14 dB External Optical Feedback

Proceedings of the IEICE General Conference (1999)