P. Perfetti

Research Field

Carbon fibers

Inverse photoemission spectroscopy

10.4028/www.scientific.net/msf.457-460.1325

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Photoemission spectromicroscopy of neurons

Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics (1993)

Gelsomina De Stasió S. Hardcastle S. F. Koranda B. P. Tonner Delio Mercanti

We present photoemission spectromicroscopy results on biological specimens. The data, obtained with x-ray secondary (photoelectron) emission microscopy, study individual elements in micrometer-size portions of neuron networks.

10.1103/physreve.47.2117

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Citations (38)

Morphological variations as nonstandard test parameters for the response to pollutant gas concentration: An application to Ruthenium Phthalocyanine sensing films

Applied Physics Letters (2006)

Amanda Generosi Barbara Paci V. Rossi Albertini P. Perfetti A. Paoletti

A systematic time-resolved energy dispersive x-ray reflectometry study was performed in situ on Ruthenium Phthalocyanine thin fims to estimate the morphological detection limits of this material as NO2 transducer and the influence of the gas concentration on the gas-film interaction mechanisms. The work validates the use of this unconventional method—based on the observation of the morphological parameters change—for evaluating the response of novel sensing materials in alternative to more standard procedures. Indeed, the morphological monitoring is shown to be sensitive to the gas concentration in a range comparable to the usual electroresistive measurements. Moreover, while the latter is only able to give the information on whether the gas is interacting with the sensor, the former is also able to discriminate among interaction processes of a different nature (in the present case the interaction limited to the film surface and the one involving the material bulk).

Reflectometry

Characterization

10.1063/1.2183817

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Citations (10)

Organotin films deposited by laser-induced CVD as active layers in chemical gas sensors

Thin Solid Films (1998)

R. Larciprete E. Borsella Paola De Padova P. Perfetti G. Faglia

Active layer

Volatile organic compound

10.1016/s0040-6090(97)01201-7

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Citations (43)

Low energy electron loss spectroscopy of Si–Ge interfaces

Journal of Vacuum Science and Technology (1981)

P. Perfetti S. Nannarone F. Patella C. Quaresima F. Cerrina

We present energy loss spectra of Si–Ge heterojunctions. The early stage of formation of the interface has been studied by successive evaporations of small amounts of germanium on a silicon substrate heated at 350 °C. The results, compared with theoretical calculations, show that the interface is abrupt on a microscope scale and that germanium induces extrinsic interface states in the main and partial gaps of the projected bulk band structure of silicon on the (111) surface.

Silicon-germanium

10.1116/1.571056

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Citations (20)

Magnetic and structural properties of Mn/InSb(001)

Journal de Physique IV (Proceedings) (2006)

M. Zerrouki Paola De Padova C. Quaresima P. Perfetti Manuel Richter

10.1051/jp4:2006132030

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Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions

Acta Physica Polonica A (1995)

B. Adamowicz C. Ottaviani C. Quaresima P. Perfetti

We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n-and p-doped InP substrates.The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.

Surface Photovoltage

10.12693/aphyspola.88.663

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Conceptual design of a high-brightness linac for soft X-ray SASE-FEL source

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (2003)

D. Alesini S. Bertolucci M.E. Biagini C. Biscari R. Boni

Conceptual design

10.1016/s0168-9002(03)00905-7

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Citations (14)

1D electronic properties in temperature-induced c(4×2) to 2×1 transition on the β-SiC(100) surface