Herbert S. Bennett

National Institute of Standards and Technology

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Jeremiah R. Lowney

National Institute of Standards and Technology

Richard A. Forman

SRI International

C.E. Weitzel

Motorola (United States)

A.A. Immorlica

BAE Systems (United States)

John J. Pekarik

GlobalFoundries (United States)

Júlio Costa

Intel (United Kingdom)

M. Racanelli

University of Wisconsin–Madison

Margaret Huang

Intel (United States)

Jan-Erik Mueller

Intel (Germany)

Bin Zhao

Dalian Maritime University

Cooperative Institutions

National Institute of Standards and Technology

National Institute of Standards

Material Measurement Laboratory

United States Department of Commerce

Physical Measurement Laboratory

Texas Instruments (United States)

Information Technology Laboratory

University of Maryland, College Park

Massachusetts Institute of Technology

National Technical Information Service

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Medical Applications of Nano-electrotechnologies: Challenges and Concerns for Technology Roadmaps, International Standards and Measurements | NIST

Herbert S. Bennett

NIST

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ITRS Chapter: RF and A/MS Technologies | NIST

Herbert S. Bennett John J. Pekarik

NIST

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Improved physics for simulating submicron bipolar devices

IEEE Transactions on Electron Devices (1985)

Herbert S. Bennett Dennis Fuoss

The conventional device physics in most numerical simulations of bipolar transistors may not predict the measured electrical performance of shallow heavily doped emitters and bases. This paper summarizes improved device physics for numerical simulations of solid-state devices with dopant densities up to about 3 × 10 ²⁰ cm ^-3 and with junction depths as small as 0.1 µm. This improved device physics pertains to bandgap narrowing, effective intrinsic carrier concentrations, carrier mobilities, and lifetimes. When this improved physics is incorporated into device analysis codes such as SEDAN and then used to compute the electrical performance of n-p-n transistors, the predicted values agree very well with the measured values of the current-voltage characteristics and dc common emitter gains for devices with emitter-base junction depths between 10-0.16µm.

10.1109/t-ed.1985.22240

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Heavy doping effects on bandgaps, effective intrinsic carrier concentrations and carrier mobilities and lifetimes

Solid-State Electronics (1985)

Herbert S. Bennett

Mobilities

Charge carrier

Carrier lifetime

Electron Mobility

Free carrier

Charge-carrier density

10.1016/0038-1101(85)90230-8

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Citations (36)

Effect of donor impurities on the density of states near the band edge in silicon

Journal of Applied Physics (1981)

Herbert S. Bennett Jeremiah R. Lowney

Using the effective mass approximation and assuming that the scatteirng events for the electrons and holes by the assembly of donors are independent, we have calculated the effects of heavy doping on the conduction and valence states in silicon. When no bound-electron states asocated with donors exist, the results show that: (1) the electron-donor interaction lowers the energy of the conduction and valence states, (2) band distortions occur, and (3) approeciable band-gap narrowing occurs. Our numerical results tend to support the band-gap estimates interpreted from optical measurements.

Quasi Fermi level

Density of states

10.1063/1.329497

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Citations (24)

Barothermal theory of two devices for measuring absorption coefficients

Journal of Research of the National Bureau of Standards Section A Physics and Chemistry (1975)

Herbert S. Bennett

Two devices are proposed for measuring absorption coefficients in weakly absorbing materials. The first device measures cylindrical samples and the second device measures flat plate or disk samples. This paper reports on the derivations for the steady-state and transient solutions to the heat diffusion equations which describe the barothermal behavior of the two proposed devices. In addition, Green's function techniques are used to describe the cyclic heating and cooling of the cylinders and plates.

Transient (computer programming)

Diffusion theory

10.6028/jres.079a.025

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A systematic approach for multidimensional, closed-form analytic modeling: Minority electron mobilities in Ga1-xAlxAs heterostructures

Journal of Research of the National Institute of Standards and Technology (2000)

Herbert S. Bennett James J. Filliben

A significant, practical challenge, which arises in developing computationally efficient physical models for use in computer simulations of microelectronic and optoelectronic devices (for example, transistors in digital cellular phones and lasers in optical networks, respectively), is to represent vast amounts of numerical data for transport properties in two or more dimensions in terms of closed form analytic expressions. In this paper, we present a general methodology to achieve the above goal for a class of numerical data in a bounded two-dimensional space. We then apply this methodology to obtain a closed-form analytic expression for the minority electron mobilities at 300 K in p-type Ga1- x Al x As as functions of the acceptor density N A between 10(16) cm(-3) and 10(20) cm(-3) and the mole fraction of AlAs x between 0.0 and 0.3. This methodology and its associated principles, strategies, regression analyses, and graphics are expected to be applicable to other problems beyond the specific case of minority mobilities addressed in this paper.

Mobilities

Microelectronics

Acceptor

10.6028/jres.105.037

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Citations (12)

Comparison of theoretical and empirical lifetimes for minority carriers in heavily doped silicon

Solid-State Electronics (1984)

Herbert S. Bennett

Carrier lifetime

10.1016/0038-1101(84)90008-x

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Future Perspective of RF and Analog/Mixed-Signal Integrated Circuit Technologies for Mobile Communications

Bin Zhao Herbert S. Bennett Júlio Costa P.E. Cottrell A.A. Immorlica

Radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) are key enabling components for mobile and wireless communications and their advancements continue to drive the growth of the related semiconductor market. The circuit and technology requirements for RF and AMS ICs in mobile and wireless communications are quite different in comparison to that for digital logic and memory applications. Many tradeoffs and unique considerations have to be applied for RF and analog/mixed-signal technology development and circuit implementations. This paper reviews the critical circuit and technology requirements for RF and analog/mixed-signal ICs for mobile and wireless communications and highlights future challenges and opportunities

Mixed-signal integrated circuit

10.1109/icsict.2006.306276

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Calculated majority- and minority-carrier mobilities in heavily doped silicon and comparisons with experiment

Journal of Applied Physics (1992)

Herbert S. Bennett Jeremiah R. Lowney

As silicon devices approach 0.1 μm in size, it will be essential to have accurate values of the majority and minority mobilities of electrons and holes. These mobilities have been calculated in silicon for donor and acceptor densities between 1017 and 1020 cm−3. All the important scattering mechanisms have been included. The ionized impurity scattering has been treated with a quantum-mechanical phase-shift analysis. The results are in good agreement with experiment, but predict that the change of minority electron mobility with increasing dopant density should decrease slightly at high dopant densities for a small range of densities. This effect occurs mainly because of the reduction of plasmon scattering. Some recent experiments support these findings. In addition, the ionized impurity scattering rates calculated from the quantum-mechanical phase shifts and those rates calculated from the Born approximation are shown to differ by more than factors of 3. The Born approximation is not valid for low-energy carriers near band extrema. Carrier scattering rates are key input quantities for Monte Carlo calculations of carrier-velocity versus electric-field relations and of simulations of device behavior. Our calculations do not treat the density-of-states modifications due to heavy doping, which should have only a small effect on the mobility at room temperature.

Electron Mobility

Acceptor

Ionized impurity scattering

10.1063/1.351128

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Citations (29)