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Wei-xi Chen

Chinese Academy of Sciences

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Shumin Wang

Henan Polytechnic University

Peng-fei Jiao

Peking University

Jiaoqing Pan

Institute of Semiconductors

Yinghua Zou

Peking University

Ying Ding

The University of Texas at Austin

Zongju Xia

Peking University

Zhou Fan

National Astronomical Observatories

Wei Wang

Yangzhou University

Bei Zhang

Tongji University

Hong-Du Liu

Peking University

Cooperative Institutions

Peking University

Chinese Academy of Sciences

University of Chinese Academy of Sciences

State Key Laboratory on Integrated Optoelectronics

Academia Sinica

Zhejiang University

Tongji University

Tsinghua University

Institute of Semiconductors

Fudan University

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Subpicosecond dynamics spectra in strained-layer and strained quantum well

Solid State Communications (1995)

Wei-xi Chen Yu-guang Hong Xiaozhong Dang Peng-fei Jiao Shumin Wang

10.1016/0038-1098(95)00508-0

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Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE

Journal of Luminescence (2006)

Ying Ding Zhou Fan Wei-xi Chen Wei Wang

Superluminescent diode

10.1016/j.jlumin.2006.01.077

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Broad-band semiconductor optical amplifiers

Journal of Luminescence (2006)

Ying Ding Qiang Kan Junling Wang Jiaoqing Pan Zhou Fan

Amplified spontaneous emission

Ranging

Saturation (graph theory)

10.1016/j.jlumin.2006.01.094

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Citations (1)

Research on Listed Companies Clarification Announcements’ Stock Prices Reaction and its Influencing Factors

Wei Zhang Wei-xi Chen LI Jun-feng Huimin Cao

Stock (firearms)

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Subpicosecond carrier lifetime in InP

Solid State Communications (1994)

Wei-xi Chen Peng-fei Jiao Shumin Wang Yinghua Zou Zongju Xia

Carrier lifetime

Indium phosphide

10.1016/0038-1098(94)90429-4

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Citations (1)

Widely frequency tunable amplified feedback laser as 20 GHz optical microwave source

The Journal of China Universities of Posts and Telecommunications (2009)

Yu Sun Jiaoqing Pan Lingjuan Zhao Wei-xi Chen Wei Wang

Laser linewidth

SIGNAL (programming language)

10.1016/s1005-8885(08)60358-1

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Masked and selective thermal oxidation of GaAs-Ga1−xAlxAs multilayer structures

Applied Physics Letters (1981)

Hong-Du Liu Bei Zhang Wang Dehuang Wei-xi Chen

The masked thermal oxidation of GaAs was carried out successfully with stripe Cr-Au metal film as a mask. The oxidation rate of Ga1−xAlxAs was found to be much smaller than that of GaAs; this fact means that the thermal oxidation process is selective for the GaAs-Ga1−xAlxAs multilayer structure. By means of this masked and selective thermal oxidation (MSTO) technique, the stripe optical waveguides of GaAs and stripe GaAs-Ga1−xAlxAs double-heterostructure (DH) lasers were fabricated. A demonstration of the stripe guide and some performance of stripe DH lasers are presented.

Thermal oxidation

Oxidation process

10.1063/1.92411

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Citations (9)

The reflectance of solid-phase epitaxial Pd/Ge film on GaAs and its application for VCSELs array

Solid State Communications (1993)

Wei-xi Chen Peng-fei Jiao Jihui Zhao Shumin Wang Shou-chang Guan

Ohmic contact

10.1016/0038-1098(93)90614-s

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Citations (7)