We carried out cross-sectional transmission electron microscopy to investigate the diffusion at the Ni/SiC interface enhanced by femtosecond-laser-induced modifications. The surface of a 4H-SiC crystal was irradiated with femtosecond laser pulses along lines, and a Ni film was then deposited. A thin modified layer was introduced by densely irradiating the SiC surface with line spacing close to the laser-beam diameter. After annealing, a layered structure was formed at the Ni/SiC interface, composed of a C layer sandwiched between the layers of Ni and Ni–Si alloy. The formation of Ni-silicide, i.e., Ni2Si and NiSi, was detected by micro-Raman spectroscopy. The distribution of C visualized by electron energy loss spectroscopy clearly shows that C atoms were released from the dissolved SiC and subsequently diffused through the Ni-silicide layer towards the Ni film surface.

10.7567/jjap.57.116501

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Pulse to pulse development of femtosecond laser ablation process observed by scanning electron microscopy

The Japan Society of Applied Physics (2019)

Yuki Fuchikami Mayu Yabuuchi Miyu Miyamoto Masaru Nimura Makoto Yamaguchi

Laser Ablation

Femtosecond pulse

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Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface

Applied Physics Express (2017)

Tatsuya Okada Takuro Tomita Tomoyuki Ueki Takuya Hashimoto Hiroki Kawakami

We investigated low-temperature diffusion at the Ni/SiC interface with the assistance of femtosecond laser-induced modifications. Cross sections of the laser-irradiated lines of two different pulse energies — 0.84 and 0.60 J/cm2 in laser fluence — were compared before and after annealing at 673 K. At the laser fluence of 0.60 J/cm2, a single flat Ni-based particle was formed at the interface after annealing. The SiC crystal under the particle was defect-free. The present results suggest the potential application of femtosecond laser-induced modifications to the low-temperature fabrication of contacts at the interface without introducing crystal defects, e.g., dislocations and stacking faults, in SiC.

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10.7567/apex.11.016502

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