C. H. A. Huan

Institute of Materials Research and Engineering

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Andrew T. S. Wee

National University of Singapore

Shijie Wang

Institute of Materials Research and Engineering

Tze Chien Sum

Nanyang Technological University

Jisheng Pan

Agency for Science, Technology and Research

Yuan Ping Feng

North University of China

C. K. Ong

National University of Singapore

Junguang Tao

Hebei University of Technology

J. W. Chai

Southwest Hospital

K.L. Tan

National University of Singapore

Jin‐Cheng Zheng

Xiamen University

Cooperative Institutions

National University of Singapore

248

Nanyang Technological University

161

Institute of Materials Research and Engineering

Agency for Science, Technology and Research

Chinese Academy of Sciences

Zhejiang University

University of Chinese Academy of Sciences

Peking University

Singapore Polytechnic

Institute of Microelectronics

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ARXPS analysis of surface compositional change in ion bombarded GaAs (100)

Journal of Physics D Applied Physics (1997)

Jisheng Pan Andrew T. S. Wee C. H. A. Huan Hao Tan K.L. Tan

Angle-resolved x-ray photoelectron spectroscopy (ARXPS) has been used to study surface compositional changes in GaAs (100) as a consequence of 1 to 5 keV ion bombardment. Prior to ion bombardment, the ARXPS measurements showed that neglecting surface contamination, the composition of the GaAs surface was close to its stoichiometric value of 1:1. After ion bombardment, the oxide layer was efficiently removed. At steady state the altered layers induced by 1 - 5 keV ion bombardment were, on average, Ga-rich up to the sampling depth of the ARXPS technique. The ARXPS measurements also showed that the depth profile of the altered layer was a function of ion energy. The altered layer induced by 1 keV ion bombardment was inhomogeneous as a function of depth and appeared richer in Ga on the surface than in the subsurface region, that by 3 keV ion bombardment was homogeneous and that by 5 keV ion bombardment was less Ga-rich on the surface than in the subsurface region. The results are discussed in the context of preferential sputtering, radiation-enhanced diffusion/segregation, and altered layer thickness dependence on ion energy.

Surface layer

10.1088/0022-3727/30/18/004

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Citations (16)

Effect of ITO Carrier Concentration on the Performance of Organic Light-Emitting Diodes

MRS Proceedings (1999)

Furong Zhu Keran Zhang C. H. A. Huan Andrew T. S. Wee Ewald Guenther

Indium tin oxide

10.1557/proc-598-bb11.11

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Citations (3)

Surface Characterization of C₆₀-Containing Poly(ethyl methacrylate)/Poly(ethyl methacrylate) Blends

Langmuir (2003)

Hai Huang S. H. Goh Jianwei Zheng D. M. Y. Lai C. H. A. Huan

The surface properties of C60-containing poly(ethyl methacrylate)s (PEMA-C60) and their blends with poly(ethyl methacrylate) (PEMA) were investigated by attenuated total reflectance Fourier transform infrared spectroscopy, scanning electron microscopy, time-of-flight secondary ion mass spectrometry, and contact-angle measurements. The polymer surface becomes more hydrophobic with increasing C60 content in the polymer. The PEMA-C60/PEMA blends show the surface enrichment of PEMA-C60. There is a good correlation between the surface hydrophobicity and the surface enrichment of PEMA-C60.

10.1021/la027077g

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Citations (10)

Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperature

Thin Solid Films (2000)

Keran Zhang Furong Zhu C. H. A. Huan Andrew T. S. Wee

Indium tin oxide

Partial pressure

Cavity magnetron

10.1016/s0040-6090(00)01418-8

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Citations (130)

SIMS study of the formic acid adsorption on polycrystalline copper and CuCl(111) surfaces

Surface Science (1993)

Lin Jianyi Andrew T. S. Wee C. H. A. Huan K. L. Tan

Overlayer

10.1016/0039-6028(93)90911-3

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Citations (5)

THE ORIGIN OF ROOM TEMPERATURE FERROMAGNETISM IN Co-TiO₂ SYSTEM

International Journal of Modern Physics B (2008)

Jisheng Pan J. W. Chai Shijie Wang Junguang Tao C. H. A. Huan

The annealing effects on the composition, structure and magnetism for Co overlayer deposited onto rutile TiO 2 (100) surfaces at room temperature has been investigated. Room temperature ferromagnetic behaviour is exhibited for all samples, but saturation magnetic moment per Co atom decreases with increasing annealing temperature until 530°C. In-situ photoemission studies show that the reduction of the saturation magnetic moment is due to Co oxidation at high annealing temperature. However, the saturation magnetic moment increases after annealing the sample up to 700°C. The formation of a Co - Ti - O phase rather than Co metallic clusters observed by high-resolution transmission electron microscopy is suggested to be responsible for the increase of the saturation magnetic moment.

Overlayer

Magnetism

Rutile

Saturation (graph theory)

10.1142/s0217979208046050

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Citations (2)

Synergism between Cu and Zn sites in Cu/Zn catalysts for methanol synthesis

Applied Surface Science (1999)

H.Y. Chen Sharon Lau Luwei Chen Jianyi Lin C. H. A. Huan

10.1016/s0169-4332(99)00317-7

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Citations (96)

Phase transformation and enhanced nuclear resonance in acoustics

C. H. A. Huan

Source

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Citations (0)

Ultrathin single-crystal ZnO nanobelts: Ag-catalyzed growth and field emission property

Nanotechnology (2010)

Guozhong Xing Xiaosheng Fang Z Zhang Daichao Wang Xiaopeng Huang

We report the growth of ultrathin single-crystal ZnO nanobelts by using a Ag-catalyzed vapor transport method. Extensive transmission electron microscopy and atomic force microscopy measurements reveal that the thickness of the ultrathin ZnO nanobelts is ∼ 2 nm. Scanning electron microscopy and post-growth annealing studies suggest a '1D branching and 2D filling' growth process. Our results demonstrate the critical role of catalyst in the deterministic synthesis of nanomaterials with the desired morphology. In addition, these ultrafine nanobelts exhibit stable field emission with unprecedented high emission current density of 40.17 mA cm − 2. These bottom-up building blocks of ultrathin ZnO nanobelts may facilitate the construction of advanced electronic and photonic nanodevices.

Nanomaterials

10.1088/0957-4484/21/25/255701

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Citations (80)

AES analysis of silicon nitride formation by 10 keV N+ and N2+ ion implantation

Vacuum (1996)

Jisheng Pan Andrew T. S. Wee C. H. A. Huan Hao Tan K.L. Tan

Auger electron spectroscopy

Saturation (graph theory)

Stoichiometry

10.1016/s0042-207x(96)00220-5

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Citations (10)