Wei Li

Nankai University

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Yonggang Lin

Zhejiang Ocean University

Xiuxing Yin

Wuhan University

Sheng De-ren

Zhejiang University

Hongwei Liu

Zhejiang University

Jianhong Chen

Central South University

Yadong Jiang

University of Electronic Science and Technology of China

Yajing Gu

Zhejiang University

Jingjun Xu

Nankai University

Bo Jin

Zhejiang University

Yadong Jiang

University of Electronic Science and Technology of China

Cooperative Institutions

Zhejiang University

108

University of Electronic Science and Technology of China

Chinese Academy of Sciences

University of Sydney

Friedrich-Alexander-Universität Erlangen-Nürnberg

Technology Innovation Institute

Nankai University

University of Chinese Academy of Sciences

National Engineering Research Center of Electromagnetic Radiation Control Materials

Huazhong University of Science and Technology

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Research on Functional Safety-Oriented Supercapacitor Vehicle-Mounted Low-Voltage Power Supply System for New Energy Vehicles

Lecture notes in computer science (2025)

Rong Yan Wei Li Bin Guo Guanqiang Ruan Xing Hu

10.1007/978-981-96-0774-7_22

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Application Analysis of Vacuum Switch Based on 2/3-Turn Coil-Type Longitudinal Magnetic Contact in the Field of Breaking High-Frequency Current

Lecture notes in electrical engineering (2025)

Wei Li Kai Liu Bin Xie Zhi‐Qing Li Wengang Xie

Turn (biochemistry)

10.1007/978-981-96-0897-3_23

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A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35 μm CMOS

Journal of Semiconductors (2011)

Hui Xu Feng Jun Q Liu Wei Li

A 3.125-Gb/s transimpedance amplifier (TIA) for an optical communication system is realized in 0.35 μm CMOS technology. The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-cancellation techniques to stabilize the DC operating point. In addition, noise optimization is processed. The on-wafer measurement results show the transimpedance gain of 54.2 dBΩ and −3 dB bandwidth of 2.31 GHz. The measured average input referred noise current spectral density is about . The measured eye diagram is clear and symmetrical for 2.5-Gb/s and 3.125-Gb/s PRBS. Under a single 3.3-V supply voltage, the TIA consumes only 58.08 mW, including 20 mW from the output buffer. The whole die area is 465 × 435 μm2.

Transimpedance amplifier

Cascode

10.1088/1674-4926/32/10/105003

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Citations (7)

V(z) measurement of multiple leaky wave velocities for elastic constant determination

The Journal of the Acoustical Society of America (1996)

Wei Li J. D. Achenbach

A multiple leaky acoustic wave method to determine elastic constants from a single V(z) measurement is presented. The V(z) curves which include contributions from different leaky acoustic waves, measured using the line-focus acoustic microscope at 225 MHz, have been compared with theoretical results predicted by a V(z) measurement model. The determination of elastic constants has been achieved numerically by seeking a set of elastic constants that leads to the best fit, in the least square sense, of the theoretical results to the experimental ones. The method has been applied to isotropic materials in bulk, and plate and thin-film configurations. Elastic constants for each of these cases have been determined. The consistency, convergence, sensitivity, and accuracy of the procedure have been investigated.

Constant (computer programming)

10.1121/1.416033

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Citations (18)

Research on the methods of detecting and removing slide valve failure

Journal of Zhejiang University Science (2000)

Wei Li Weibo Li Wu Gen-mao Jianhua Wei

Various ways for detecting slide valve failure are discussed in the paper. Specifically, a new method for detecting slide valve sticking state is first presented. The method does not depend on any special sensor and is only based on the detection of oscillation current wave within a valve coil. Results of theoretical analysis and experimental research are given for comparison. In order to remove a slide valve sticking online, a concept and method of “electrical hammer” is introduced. At last, an application example of the methods is discussed. In fact, it is an electro-hydraulic turbine system with failure diagnosis, fault-tolerant and trouble removal functions.

Water hammer

Hammer

10.1007/bf02841050

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Citations (3)

Characterization and Ferroelectric Properties of Electric Poled PVDF Films

Yun Ye Yadong Jiang Zhiming Wu Hongjuan Zeng Yajie Yang

The electric poling behaviors of poly(vinylidene fluoride) (PVDF) thin films prepared by solution-casting method were characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM). The ferroelectric properties of PVDF films were also investigated. The present study gives an immediate evidence of a progressive phase transition taking place in PVDF films during electric poling. The phase transitions are characterized as /spl alpha/ phase to /spl beta/ phase via middle /spl delta/ phase with increment of poled electric field intensity. According to ferroelectric hysteresis performance of PVDF films, it can be found that the trend of remnant polarization P/sub r/ which increases with the poled electric field intensity is coincident with Boltzmann distributing function. And the results indicate that the range of the poled electric field intensity which brings about the maximal remnant polarization P/sub r/ was 105-125 MV/m, the P/sub r/ could be as high as 6 /spl mu/C/cm/sup 2/.

Poling

Hysteresis

10.1109/ise.2005.1612336

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Citations (7)

Modulated free carrier absorption characterization of semiconductor wafers by frequency scans at different pump-to-probe separations

Acta Physica Sinica (2009)

Wei Li Bincheng Li

Based on a three-dimensional modulated free carrier absorption （MFCA） model，simulation was performed to investigate the dependences of MFCA amplitude and phase on the electronic transport properties （the carrier lifetime，the carrier diffusivity，and the front surface recombination velocity） of semiconductor wafers at different pump-to-probe separations and different modulation frequencies. Experiments were performed with a silicon wafer，in which amplitude and phase were recorded as functions of modulation frequencies at several different two-beam separations. The electronic transport properties of semiconductor wafers were determined simultaneously via multi-parameter fitting procedure. These results showed that the method is capable of improving the measurement precision of the simultaneous multi-parameter determination of transport properties.

Free carrier absorption

Carrier lifetime

Modulation (music)

10.7498/aps.58.6506

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Degradation induced by hot carrier and cold carrier in 65‐nm NMOSFETs with enclosed gate and two‐edged gate layouts

Micro & Nano Letters (2018)

Jingyu Shen Ming Zhang Wei Li Xue Fan Jianjun Li

In this work, performance degradation of 65 nm N‐channel metal‐oxide‐semiconductor field effect transistors (NMOSFETs) with enclosed gate and two‐edged gate layouts under hot carrier stress and constant voltage stress is investigated. Compared with the cold carrier, the hot carrier effect (HCE) causes more serious degradation in threshold voltage and transconductance. It is shown that cold carrier contribution is reversible, while HCE damage is permanent, it cannot be reversed by application of the annealing bias. Meanwhile, an enclosed gate NMOSFET is proved to have higher resistance to HCE than two‐edged gate NMOSFET fabricated in the same 65 nm complementary metal‐oxide‐semiconductor (CMOS) technology according to the results of experiments. That is, the enclosed gate NMOSFET not only provides total‐dose radiation tolerance but also improves the hot carrier reliability of advanced CMOS circuits. The contributions of the two types of carriers to the degradation of transistor performance are analysed. The physical mechanism of HCE reliability of different geometry MOSFETs is studied.

Degradation

10.1049/mnl.2017.0850

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HCI in China

Feng Tian Xiangshi Ren Xiangmin Fan Wei Li Haipeng Mi

Human Computer Interaction (HCI) is experiencing explosive growth in both Chinese industry and academia. We propose to organize an international workshop to coordinate and unite the ongoing efforts, and to facilitate collaboration between local community with the global HCI community. This extended abstract describes the background, goals, organizers, themes, and plans of the proposed workshop.

10.1145/3290607.3299005

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Role of shape and periodicity in extraordinary transmission of periodic arrays at THz range

Xiongwei Jun Yao Wei Li Jingling Shen LI Bin-bin

We investigated the transmission enhancement and the suppression in rectangular holes array at terahertz range. Experiments and simulations verified that the metal film perforated with rectangular holes array had the shape resonance and the Wood-Rayleigh anomalies. With the development of previously reported theory, we explored the contribution of the shape of single hole and the periodicity of array. The shape resonance caused by the geometry of structure leaded to the location of the resonance peak. The periodicity of array enhanced the peak and provided the minima in spectrum in the condition of the incident E-field parallel the direction of periodicity. This study contributed a better understanding of fundamental physics behind the extraordinary transmission of periodic arrays at THz range and provided a simple method for the THz devices designing.

Maxima and minima

10.1109/imws2.2012.6338250

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