R.A. Bardos

UNSW Sydney

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Thorsten Trupke

UNSW Sydney

Malcolm Abbott

UNSW Sydney

G. N. Taylor

University of Melbourne

S.N. Tovey

University of Melbourne

G. F. Moorhead

University of Melbourne

R. Bonino

Istituto Nazionale di Fisica Nucleare, Sezione di Torino

D.J. Munday

University of Cambridge

P. Jarron

European Organization for Nuclear Research

E. Fretwurst

Universität Hamburg

A. Clark

University of Edinburgh

Cooperative Institutions

European Organization for Nuclear Research

UNSW Sydney

Fraunhofer Institute for Solar Energy Systems

University of Melbourne

Fraunhofer Society

ARC Centre of Excellence in Advanced Molecular Imaging

University of Adelaide

TU Dortmund University

Australian National University

Centre National de la Recherche Scientifique

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Calibration of the WCT‐100 photoconductance instrument at low conductance

Progress in Photovoltaics Research and Applications (2008)

Keith R. McIntosh Jiun‐Hua Guo Malcolm Abbott R.A. Bardos

Abstract The WCT‐100 photoconductance instrument is used throughout the photovoltaic industry providing a relatively simple and inexpensive means to assess recombination parameters. This paper presents a method to determine its output voltage V WCT over the conductance range, S = 0·002–20 mS, a range not easily attained by the conventional calibration method. The relationship between V WCT and S is found to transition from being non‐linear to linear at S ∼ 1 mS, which equates to the conductance of a 300 µ m thick 30 Ω‐cm silicon wafer. For samples whose dark conductance is lower than the transition conductance, the non‐linear relationship between V WCT and S must be taken into account to prevent a gross underestimation of recombination rate. The method we describe can equally well be used to investigate the calibration of other photoconductance instruments. It involves the simultaneous measurement of a device's electrical conductance and the instrument's output voltage under a range of steady‐state illumination intensities. Copyright © 2008 John Wiley & Sons, Ltd.

Linear relationship

10.1002/pip.810

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Citations (18)

ELECTRONICS AND READOUT OF A LARGE-AREA SILICON DETECTOR FOR LHC

K. Borer D.J. Munday M.R. Parker F. Anghinolfi P. Aspell

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Photoconductance Measurements on Thin-Film Crystalline Silicon p–n Diodes

World Conference on Photovoltaic Energy Conversion (2010)

Keith R. McIntosh Malcolm Abbott R.A. Bardos Per I. Widenborg Armin G. Aberle

10.4229/25theupvsec2010-3co.15.4

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Citations (1)

On the detection of shunts in silicon solar cells by photo‐ and electroluminescence imaging

Progress in Photovoltaics Research and Applications (2007)

Otwin Breitenstein Jan Bauer Thorsten Trupke R.A. Bardos

Abstract Recently electroluminescence (EL) and photoluminescence (PL) imaging were reported to allow detection of strong ohmic shunts in silicon solar cells. Comparing lock‐in thermography (LIT) images with luminescence images of various shunted cells, measured under different conditions, the ability of luminescence techniques for shunt detection is investigated. Luminescence imaging allows identifying ohmic shunts only if they reach a certain strength. The detection limit for PL measurements of linear shunts was estimated to be in the order of 15 mA at 0·5 V bias for a point‐like shunt in multicrystalline (mc) cells. Pre‐breakdown sites can also be detected by electroluminescence under reverse bias. Copyright © 2007 John Wiley & Sons, Ltd.

Ohmic contact

10.1002/pip.803

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Citations (124)

Optimised gettering and hydrogenation of multi-crystalline silicon wafers for use in solar cells

Jason Tan Andrés Cuevas Daniel Macdonald Neil Bennett I.G. Romijn

In this paper, two types of phosphorus gettering have been compared. In addition, two annealing conditions for high density PECVD silicon nitride films are investigated. Our results show that optimised gettering and SiN induced hydrogenation can reduce and maintain interstitial iron concentrations ≤10Atoms/cm, as well as reducing the recombination strength of lattice dislocations. However, non ideal SiN annealing conditions can dissolve metal precipitates, resulting in high interstitial Fe concentrations as well as allowing passivated lattice dislocations to regain recombination strength.

Getter

Carrier lifetime

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光致发光技术PL（PhotoLuminescence）分析结晶硅片及电池片

中国建设动态：阳光能源 (2010)

Thorsten Trupke R.A. Bardos J. Nyhus 鲁永强

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Developments towards a large-area silicon tracker at LHC

Prepared for (1993)

K. Borer K. Benslama P. Scampoli F. Anghinolfi Duncan Campbell

Silicon valley

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Impedance analysis: A powerful method for the determination of the doping concentration and built-in potential of nonideal semiconductor p-n diodes

Journal of Applied Physics (2005)

A. Straub R. Gebs H. Habenicht S. Trunk R.A. Bardos

An impedance analysis method is introduced that enables the reliable determination of the doping concentration and the built-in potential of nonideal semiconductor p-n diodes featuring poor values for the shunt resistance, the series resistance, and∕or the diode saturation current. The sample doping concentration on the lightly doped side of the p-n junction and the built-in potential are determined using the classic 1∕C2 vs V representation. The small-signal capacitance C for each reverse bias voltage V is directly extracted from the measured frequency dependence of the sample’s impedance Z. A crucial feature of the method is the determination of the diode’s series resistance and shunt resistance for each reverse bias voltage used. The method is verified using high-quality p-n junction diodes fabricated in silicon wafer substrates and its capabilities are demonstrated on nonideal p-n junction diodes fabricated in polycrystalline silicon thin films on glass substrates.

Equivalent series resistance

Saturation current

p–n junction

Contact resistance

Spreading resistance profiling

Step recovery diode

Polycrystalline silicon

Depletion region

Electrical junction

Diffusion capacitance

10.1063/1.1868079

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Citations (42)

Neutron damage of silicon detectors at 20 deg C

R.A. Bardos G. Gorfine L. Guy G. F. Moorhead G. N. Taylor

Neutron Detection

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Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging

Applied Physics Letters (2007)

Thorsten Trupke E. Pink R.A. Bardos Malcolm Abbott

The fast determination of the spatially resolved series resistance of silicon solar cells from luminescence images is demonstrated. Strong lateral variation of the series resistance determined from luminescence images taken on an industrial screen printed silicon solar cell is confirmed qualitatively by a Corescan measurement and quantitatively by comparison with the total series resistance obtained from the terminal characteristics of the cell. Compared to existing techniques that measure the spatially resolved series resistance, luminescence imaging has the advantage that it is nondestructive and orders of magnitude faster.

Equivalent series resistance

Spreading resistance profiling

10.1063/1.2709630

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Citations (233)