Y. S. Gui

University of Manitoba

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C.‐M. Hu

University of Manitoba

Junhao Chu

Shanghai Institute of Technical Physics

Jinwei Rao

Shandong University

Bimu Yao

Shanghai Institute of Technical Physics

Xiaolong Fan

Lanzhou University

A. Wirthmann

University of Manitoba

L. W. Molenkamp

University of Würzburg

Lei Fu

China University of Geosciences

H. Buhmann

University of Würzburg

Bo Shen

Peking University

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Chinese Academy of Sciences

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University of Manitoba

Shanghai Institute of Technical Physics

University of Chinese Academy of Sciences

Fudan University

Lanzhou University

University of Würzburg

Nanjing University

Collaborative Innovation Center of Advanced Microstructures

State Key Laboratory of Surface Physics

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<title>Interface electrical characteristics of passivation films on HgCdTe</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1998)

X. C. Zhang Guozhen Zheng Shaoling Guo Y. S. Gui Junhao Chu

A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by capacitance-voltage (CV) characteristics of metal-insulator- semiconductor (MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge approximately -4.0 X 10¹⁰ cm^-2, density of slow state approximately 5.1 X 10¹⁰cm^-2, density of fast interface state approximately 2.7 X 10¹¹cm^-2eV^-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film//HgCdTe interface.

Passivation

Cadmium telluride photovoltaics

10.1117/12.300664

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Citations (0)

Measuring the peak performance of a 6G THz communication testbed

Frontiers in Antennas and Propagation (2024)

James F. Smith Y. S. Gui Irshaad Fatadin

It is expected that 6G communication technology will achieve a peak data rate capability of 1 Tbit/s. One way of reaching this goal is to employ THz frequencies for carrying wireless signals. THz frequencies have large continuous bandwidths which allow for high data rate signals. In order to support the development of THz communications and accompanying technologies, a 6G THz Communications Testbed has been set-up at the National Physical Laboratory. In this paper, the best signal performance for a variety of different baud rates and modulation schemes is explored for both a direct connection between the waveform generator and measuring oscilloscope and for several different Over-The-Air (OTA) path lengths up to 4 m specular Non-Line-of-Sight. For the direct connection, signals of up to 210 Gbit/s were achieved and data rates of up to 150 Gbit/s were achieved for OTA transmission.

Testbed

10.3389/fanpr.2024.1471091

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Large Rashba spin–orbit splitting in gate controlled n-type modulation doped HgTe/Hg0.3Cd0.7−xMnxTe quantum wells

Physica E Low-dimensional Systems and Nanostructures (2002)

Y. S. Gui J. Liu V. Daumer Christine Becker H. Buhmann

Spin–orbit interaction

Rashba effect

Gate voltage

Orbit (dynamics)

Modulation (music)

Energy level splitting

10.1016/s1386-9477(01)00320-4

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Citations (3)

Weak antilocalization and beating pattern in high electron mobility AlxGa1−xN/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling

Journal of Applied Physics (2008)

Wei Zhou Tie Lin Liyan Shang Lei Sun Kuang Gao

The weak antilocalization (WAL) effects of the two-dimensional electron gas (2DEG) in high mobility AlxGa1−xN/GaN heterostructure as well as beating patterns in the Shubnikov–de Haas (SdH) oscillatory magnetoresistance have been investigated by means of magnetotransport measurements before and after illumination. The zero-field spin splitting mainly arising from the Rashba spin-orbit coupling effect is studied using the weak antilocalization and beating patterns analysis, respectively. The Rashba spin-orbit coupling constant α deduced using the weak antilocalization analysis showed a good agreement with that estimated from the analysis of the beating patterns for the sample before and after illumination. For our sample, the electron motion in the high mobility system is in the ballistic regime, the experimental WAL curves were fitted by a simulated quantum conductance correction according to a model proposed by [Golub [Phys. Rev. B 71, 235310 (2005)].

Weak localization

Spin–orbit interaction

Rashba effect

Ballistic conduction

Electron Mobility

10.1063/1.2974091

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Citations (17)

Microwave reflection imaging using a magnetic tunnel junction based spintronic microwave sensor

Applied Physics Letters (2012)

Lei Fu Zhong Cao Simon Hemour Ke Wu D. Houssameddine

A far-field microwave imaging technique has been developed using a spintronic sensor based on a magnetic tunnel junction (MTJ). Such a sensor can directly rectify a microwave field into a dc voltage signal using the Seebeck effect. Thanks to the high conversion efficiency of the microwave rectification in MTJs, the microwave power sensitivity of the spintronic sensor is on the order of 1–10 mV/mW. This high sensitivity allows the sensor to directly measure the coherent spatial scattered microwave field distribution, which gives it the ability to non-destructively detect hidden objects down to a few wavelengths in size.

Microwave Imaging

SIGNAL (programming language)

Tunnel magnetoresistance

10.1063/1.4769837

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Citations (18)

Quantized Spin Excitations in a Ferromagnetic Microstrip from Microwave Photovoltage Measurements

Physical Review Letters (2007)

Y. S. Gui N. Mecking C.‐M. Hu

Quantized spin excitations in a single ferromagnetic microstrip have been measured using the microwave photovoltage technique. Several kinds of spin wave modes due to different contributions of the dipole-dipole and the exchange interactions are observed. Among them are a series of distinct dipole-exchange spin wave modes, which allow us to determine precisely the subtle spin boundary condition. A comprehensive picture for quantized spin excitations in a ferromagnet with finite size is thereby established. The dispersions of the quantized spin wave modes have two different branches separated by the saturation magnetization.

Spin wave

Saturation (graph theory)

10.1103/physrevlett.98.217603

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Citations (71)

Interfacial properties and their impact on magnetic tunnel junction at microwave frequencies

Applied Physics Letters (2015)

Yangping Zhao Simon Hemour D. Houssameddine Lihui Bai Y. S. Gui

An equivalent model for MgO-based magnetic tunnel junction (MTJ) is used to characterize the frequency behavior of MTJs up to 20 GHz in this paper. From the extracted parasitic factor of MTJ, we found that the parasitic components (beside the junction resistance) significantly yield adverse effect, especially at microwave frequencies. Full parametric studies show that the interfacial capacitance, rather than the geometric capacitance, plays a key role in the drop of efficiency in microwave frequency applications of MTJs. Interfacial resistance engineering is proposed as a solution to improve the parasitic factor, as well as the operation frequency of MTJ.

Parasitic capacitance

Tunnel magnetoresistance

Parasitic element

10.1063/1.4919869

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Citations (1)

Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

Journal of Crystal Growth (1999)

Liang He S.L Wang Jing Yang Meifang Yu Yan Wu

Cadmium telluride photovoltaics

Ultra-high vacuum

Vacuum evaporation

10.1016/s0022-0248(98)01395-5

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Citations (21)

Structure investigation on Hg1−xCdxTe liquid phase epitaxial films grown by the meltetch technique

Journal of Electronic Materials (1998)

Biao Li Y. S. Gui Jiangping Zhu Junhao Chu

Liquid phase

Solid-state physics

10.1007/s11664-998-0186-0

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Multisubband transport of the two-dimensional electron gas in AlxGa1−xN/GaN heterostructures

Journal of Applied Physics (2003)

Zhongming Zheng Bo Shen Chunping Jiang Y. S. Gui Takao Someya

Multisubband transport of the two-dimensional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that the mobility of the 2DEG in the first subband in a triangular quantum well at the heterointerface decreases significantly, while the mobility of the 2DEG in the second subband increases, when the Al0.22Ga0.78N barrier is partially relaxed. Such behavior of the 2DEG mobility is explained by the nonuniformity of the piezoelectric polarization field at the heterointerface induced by the Al0.22Ga0.78N relaxation and strong interface scattering. Meanwhile, it is concluded that the scattering from the remote ionized donors is the main mechanism contributing to the quantum scattering time and responsible for the intersubband scattering in the quantum well at the heterointerface.

Shubnikov–de Haas effect

Electron Mobility

10.1063/1.1536720

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Citations (18)