Yishuo Hu

Huazhong University of Science and Technology

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Wenzhao Wang

Wuhan University of Science and Technology

Yang Zeng

Nanjing University of Science and Technology

Shaoxiong Wu

North University of China

Yonghong Xiao

Shantou University

Zhenyu Guo

Imperial College London

Guangtong Zhou

Yanshan University

Shibo Wang

Jiangnan University

Xiangbin Zeng

Huazhong University of Science and Technology

Jin Wen

Zhejiang University of Science and Technology

Jingjing Lu

Jiaxing University

Cooperative Institutions

Huazhong University of Science and Technology

Nanjing University

Chinese Academy of Sciences

Dalian University of Technology

Xi'an Jiaotong University

Kunming University of Science and Technology

Beijing University of Chemical Technology

Taiyuan University of Science and Technology

Wuhan National Laboratory for Optoelectronics

Peking University

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High-performance p-type MoS ₂ field-effect transistor by toroidal-magnetic-field controlled oxygen plasma doping

2D Materials (2019)

Shaoxiong Wu Yang Zeng Xiangbin Zeng Shibo Wang Yishuo Hu

P-type transition metal dichalcogenides (TMDCs) field-effect transistor (FET) with high performance is fundamental for the development of 2D electronic and optoelectronic devices. We achieve the effective p-type doping using toroidal-magnetic-field (TMF) controlled oxygen plasma on the six-layer MoS2. The bottom-gated MoS2 FET shows a record current on-off ratio of 107, a hole mobility of 115.2 cm2 V−1 s−1 and a subthreshold swing of 137 mV dec−1 at room temperature. The high performance is attributed to the negligible lattice defects and high substitutional rate through restricting the energy of oxygen ions, which are demonstrated by Raman spectroscopy, photoluminescence spectroscopy and x-ray photoelectron spectroscopy. The excellent p-type conduction is also beneficial from enhancing the ratio of ions in oxygen plasma by the TMF. First-principle calculations validate that ions lead to a shallow acceptor level at 42.16 meV above the valance band maximum and extracting 1.0 electron from MoS2 lattice. These findings provide a scheme for realizing 2D integrated circuit and excellent optoelectronic devices using MoS2 and other homogeneous TMDCs.

10.1088/2053-1583/aafe2d

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Simulation and Optimization Characteristic of Novel MoS<sub>2</sub>/c-Si HIT Solar Cell

Journal of Minerals and Materials Characterization and Engineering (2017)

Sue Xu Xiangbin Zeng Wenzhao Wang Guangtong Zhou Yishuo Hu

Monolayer MoS2 has excellent optoelectronic properties, which is a potential material for solar cell. Though MoS2/c-Si heterojunction solar cell has been researched by many groups, little study of MoS2/c-Si solar cell physics is reported. In this paper, MoS2/c-Si heterojunction solar cells have been designed and optimized by AFORS-HET simulation program. The various factors affecting the performance of the cells were studied in details using TCO/n-type MoS2/i-layer/p-type c-Si/BSF/Al structure. Due to the important role of intrinsic layer in HIT solar cell, the effect of different intrinsic layers including a-Si:H, nc-Si:H, a-SiGe:H, on the performance of TCO/n-type MoS2/i-layer/p-type c-Si/Al cell, was studied in this paper. The results show that the TCO/n-type MoS2/i-layer/p-type c-Si/Al cell has the highest efficiency with a-SiGe:H as intrinsic layer, efficiency up to 21.85%. The back surface field effects on the properties of solar cells were studied with p + μc-Si and Al as BSF layers. And the effect of various factors such as thickness and band gap of intrinsic layer, thickness of MoS2, density of defect state and the energy band offset of MoS2/c-Si interface of TCO/n-type MoS2/i-layer nc-Si:H/p-type c-Si/Al cells, on the characteristics of solar cells, have been discussed for this kind of MoS2 heterojunction cells. The optimal solar cell with structure of TCO/n-type MoS2/i-type nc-Si:H/p-type c-Si/BSF/Al, has the best efficiency of 27.22%.

10.4236/jmmce.2017.55027

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Citations (7)

One-step growth of centimeter-scale doped multilayer MoS₂ films by pulsed laser-induced synthesis

Journal of Materials Chemistry C (2020)

Yishuo Hu Xiangbin Zeng Tingting Ren Yonghong Xiao Yang Zeng

This paper describes an innovative method known as pulsed laser induced synthesis to quickly and efficiently produce MoS₂ films. Additionally, in situ doping of various elements can be realized via a similar process. This indicates that the proposed method will be a key technology contributing to the industrialization of MoS₂ films and other TMDCs.

Pulsed laser

Pulsed Laser Deposition

10.1039/c9tc06908a

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Citations (8)

窒素プラズマドーピングにより作製した横方向単層MoS_2ホモ接合素子【JST・京大機械翻訳】

Nanotechnology (2021)

Jingjing Lu Guo Zhenyu Wang Wenzhao Lu Jichang Yishuo Hu

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Optoelectronic properties of lateral MoS₂ p-n homojunction implemented by selective p-type doping using nitrogen plasma

Journal of Physics D Applied Physics (2020)

Jin Wen Xiangbin Zeng Zhenyu Guo Yang Zeng Wenzhao Wang

The sharp interface between the p- and n-type two-dimensional (2D) semiconductors is of great importance to realize large-scale production of optoelectronic devices based on p-n junction. In this work, we report a lateral MoS2 p-n homojunction implemented by area selective nitrogen plasma doping controlled by toroidal magnetic field (TMF). Nitrogen plasma was used to modulate MoS2 thin films from naturally n-type to p-type, and thus form a lateral p-n homojunction with the remaining part of the pristine n-type MoS2. Characterization using Raman spectroscopy, photoluminescence (PL) and atomic force microscope (AFM) was carried out to identify the p-type doping effect with low surface damage. The optoelectronic properties based on band structure and carrier transport were discussed. At last, the current-voltage characteristics of the homojunction were investigated and a typical rectifying effect was exhibited. Under AM 1.5G illumination, solar cells based on the lateral p-n homojunction displayed photovoltaic properties. The controllable doping technique and the realization of p-n junction without transfer demonstrate the potential for use in various optoelectronic devices.

Homojunction

10.1088/1361-6463/ab985d

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Thermodynamic Simulation of Components’ Content in MoS₂Hydrothermal Reaction System and Oxygen–Doped MoS₂One-Step Hydrothermal Preparation Method

IOP Conference Series Materials Science and Engineering (2018)

Guangtong Zhou Hanjian Li Xiangbin Zeng Wenzhao Wang Yishuo Hu

Binary nanocomposites of Oxygen-doped molybdenum disulfide was prepared through one-step hydrothermal method. Different effects of initial addition amount of sulfur, hydrazine hydrate and molybdenum oxide on the reaction products were investigated by HCS Chemistry. The direction and process of the hydrothermal reaction were determined by the principle of lowest Gibbs free enthalpy and the components' content in the reaction system were simulated. Scanning Electron Microscopy (SEM), Raman Spectroscopy (Raman) and X-ray (XRD) was used to characterize the experimental results.

Molybdenum disulfide

Hydrothermal Synthesis

Hydrazine (antidepressant)

10.1088/1757-899x/381/1/012021

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Investigation of the Growth Process of Continuous Monolayer MoS2 Films Prepared by Chemical Vapor Deposition

Journal of Electronic Materials (2018)

Wenzhao Wang Xiaoxiao Chen Xiangbin Zeng Shaoxiong Wu Yang Zeng

Molybdenum disulfide

10.1007/s11664-018-6443-y

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Citations (12)

The morphological control of MoS2 films using a simple model under chemical vapor deposition

Thin Solid Films (2018)

Shaoxiong Wu Xiangbin Zeng Wenzhao Wang Yang Zeng Yishuo Hu

Morphology

Deposition

10.1016/j.tsf.2018.09.021

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Citations (9)

Low-damaged p-type doping of MoS₂ using direct nitrogen plasma modulated by toroidal-magnetic-field

Nanotechnology (2019)

Yang Zeng Xiangbin Zeng Shibo Wang Yishuo Hu Wenzhao Wang

Low damaged doping of two-dimensional (2D) materials proves to be a significant obstacle in realizing fundamental devices such as p–n junction diodes and transistors due to its atom layer thickness. In this work, the defect formation energy and p-type conduction behavior of nitrogen plasma doping are investigated by first principle calculation. Low damaged substitutional p-type doping in MoS2 using low energy nitrogen plasma composed of N+ and N2+ is achieved by a novel toroidal magnetic field (TMF). The TMF helps to raise the concentration of N2+ ions at low RF power condition. The electrical characteristics of double-layer MoS2 field-effect transistors (FETs) clearly show an efficient p-type doping behavior. Atomic force microscope is applied to verify the slight damage in MoS2. X-ray photoelectron spectroscopy, photoluminescence and Raman spectroscopy confirm the effective p-type doping characteristic with weak damage. These findings provide a low damage technology for efficient carrier modulation of MoS2 and other homogeneous TMDC materials, which overcomes barriers in developing 2D electronic and optoelectronic devices.

10.1088/1361-6528/ab4402

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Citations (18)

Preparation of Centimeter-scale MoS2 thin films by pulsed laser-induced synthesis and simultaneous doping of noble metals(Au, Pt, Pd)

Yishuo Hu Zeng Xiangbin

This study describes a quick synthesis (5-10 min) of Centimeter-scale MoS2 thin films on Si/SiO2 substrates by a novel pulsed laser irradiation method. Meanwhile, simultaneous doping of noble metal (Au, Pt, Pd) can be realized through this method.

Noble metal

Centimeter

Pulsed Laser Deposition

Pulsed laser

10.1364/isst.2019.jw4a.77

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