ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTThe effect of charge upon mobility. A critical examination of the Zwanzig equationD. F. Evans, C. Chan, and B. C. LamartineCite this: J. Am. Chem. Soc. 1977, 99, 20, 6492–6496Publication Date (Print):September 1, 1977Publication History Published online1 May 2002Published inissue 1 September 1977https://doi.org/10.1021/ja00462a004RIGHTS & PERMISSIONSArticle Views90Altmetric-Citations81LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (554 KB) Get e-Alertsclose Get e-Alerts
Chemical vapor deposition of tungsten silicide (WSix) from WF6 and SiH2Cl2 [JB Price, S. Wu, Y.Chow, and J. Mendonca, Semicon West (1986)] at higher deposition temperatures (450–650 °C) than the conventional WF6 and SiH4 (250–400 °C) process has been characterized using a plasma enhanced, single-wafer, cold-wall, radiantly heated system with temperature control utilizing a thermocouple in contact with the backside of the wafer. Film properties such as silicon to tungsten ratio, fluorine and chlorine concentration, resistivity, and film stress were studied as a function of substrate temperature, reactant composition, and flow rates. The film composition was measured by Rutherford backscattering spectrometry. The silicon to tungsten ratio is a function of deposition temperature at a fixed flow (x varying from 2.0–2.8 through the temperature range of 450–650 °C). The as-deposited resistivity is also a strong function of deposition temperature. The chlorine and fluorine distributions in the WSix film were measured using secondary ion mass spectrometry. The fluorine concentration was found to be much lower than levels reported by conventional WF6/SiH4 chemistry with as-deposited values of 9×1015 to 3×1018/cm3 compared to 1.3×1020 cm3 by M. Fukumoto and T. Ohzone [Appl. Phys. Lett. 50, 894 (1987)].
Describes a method of data storage that might hold data for thousands of years. High-density ROM (HD-ROM) uses a focussed ion beam operating in an ultra-high vacuum to etch robust materials such as steel or iridium. The ion beam locates the medium by using secondary electrons to produce a contrast image. It then performs ion milling under computer control. 77 nm channels have been achieved; 5 nm may be possible. The HD-ROM must be protected against abrasion and some chemical action; encapsulation is necessary.
A method is presented for nano-patterning a diffraction grating on human hair with a focused ion beam. Strands of brown hair are patterned with hyperbolas and Archimedean spirals whose pitches range from 540 nm to 1040 nm. Exposure of the hair strands to white light at various incident angles demonstrates that light of varying wavelengths is diffracted by the diffraction gratings. The diffraction causes the brown strands of hair to reflect light from the entire range of visible light.
This paper will discuss the Focus Ion Beam (FIB) milling process, media life considerations, and methods of reading the micromilled data. The FIB process for data storage provides a new non-magnetic storage method for archiving large amounts of data. The process stores data on robust materials such as steel, silicon, and gold coated silicon. The storage process was developed to provide a method to insure the long term storage life of data. We estimate the useful life of data written on silicon or gold coated silicon to be a few thousand years. The process uses an ion beam to carve material from the surface much like stone cutting. The deeper information is carved into the media the longer the expected life of the information. The process can read information in three formats: (1) binary at densities of 3.5 Gbits/cm{sup 2}, (2) alphanumeric at optical or non-optical density, and (3) graphical at optical and non-optical density. The formats can be mixed on the same media; and thus it is possible to record, in a human readable format, instructions that can be read using an optical microscope. These instructions provide guidance on reading the higher density information.
