Satoshi Yamasaki

Kanazawa University

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i-10 index

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Document Type

Co-Authors

Hiromitsu Kato

National Institute of Advanced Industrial Science and Technology

198

Toshiharu Makino

National Institute of Advanced Industrial Science and Technology

197

Masahiko Ogura

National Institute of Advanced Industrial Science and Technology

161

Hideyo Okushi

National Institute of Advanced Industrial Science and Technology

149

Daisuke Takeuchi

National Institute of Advanced Industrial Science and Technology

126

Norio Tokuda

Kanazawa University

106

Kazunobu Tanaka

Osaka University

Tsubasa Matsumoto

Fukuoka Children's Hospital and Medical Center for Infectious Diseases

Norikazu Mizuochi

Kyoto University

Akihisa Matsuda

Nippon Medical School

Cooperative Institutions

National Institute of Advanced Industrial Science and Technology

174

The University of Tokyo

140

Tokyo Institute of Technology

114

Osaka University

107

University of Tsukuba

101

Japan Science and Technology Agency

Kyoto University

Tohoku University

Kyushu University

Toshiba (Japan)

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Low specific contact resistance of heavily phosphorus-doped diamond film

Applied Physics Letters (2008)

Hiromitsu Kato Hitoshi Umezawa Norio Tokuda Daisuke Takeuchi Hideyo Okushi

Low resistive contacts were formed on heavily phosphorus-doped diamond (n+) films with phosphorus concentration of over ∼1020cm−3 grown on (111) diamond substrates by microwave plasma enhanced chemical vapor deposition with precise control of growth conditions. The specific contact resistance was determined by characterizing the current-voltage relations by means of transfer length method. It was found that the resistance of Ti∕n+ contact was significantly reduced down to the order of ∼10−3Ωcm2 even at room temperature, which indicates that the barrier width would be narrow for tunneling through the barrier to take place by heavy phosphorus doping.

Contact resistance

Resistive touchscreen

Deposition

10.1063/1.3005639

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Citations (70)

EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

Materials science forum (2002)

Norikazu Mizuochi Junichi Isoya Satoshi Yamasaki H. Takizawa Norio Morishita

10.4028/www.scientific.net/msf.389-393.497

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Citations (3)

Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation

Journal of Applied Physics (2001)

Tetsuji Yasuda Matsuhiko Nishizawa Satoshi Yamasaki

We have investigated the nucleation processes in chemical vapor deposition (CVD) of Si on SiO2 surfaces that were treated with different chlorosilane gases SiHnCl4−n, where n=0, 1, or 2. These gases chemisorb on the SiO2 surface in a self-limiting manner. At 493 K, the saturation coverage was reached at 4×108 L exposure for the SiH2Cl2 gas, and at 2×109 L for the SiHCl3 and SiCl4 gases. CVD of Si was carried out on the chlorosilane-saturated SiO2 surfaces using Si2H6 as a source gas at 853 K. It has been found that the SiCl4 and SiHCl3 treatments effectively passivate the nucleation centers on the SiO2 surfaces, while the SiH2Cl2 treatment drastically enhances Si nucleation. The reaction mechanisms causing these differences are discussed, considering the structural changes of the adsorbed chlorosilane fragments at the CVD temperature. Application of the SiCl4 treatment to the patterned SiO2 mask for selective-area epitaxial growth of Si is demonstrated.

Chlorosilane

Dimethylsilane

Passivation

Dichlorosilane

Deposition

Saturation (graph theory)

Limiting

10.1063/1.1402977

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Citations (7)

2P-125 DNAの構造分布の非調和性を考慮したDNA・DNAタンパク質複合体構造評価ポテンシャルの開発(核酸・相互作用,複合体,第46回日本生物物理学会年会)

生物物理 (2008)

Satoshi Yamasaki Tohru Terada Kentaro Shimizu Hidetoshi Kono Akinori Sarai

Source

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Citations (0)

Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins

ACS Nano (2017)

Takayuki Iwasaki Wataru Naruki Kosuke Tahara Toshiharu Makino Hiromitsu Kato

The electric field inside semiconductor devices is a key physical parameter that determines the properties of the devices. However, techniques based on scanning probe microscopy are limited to sensing at the surface only. Here, we demonstrate the direct sensing of the internal electric field in diamond power devices using single nitrogen–vacancy (NV) centers. The NV center embedded inside the device acts as a nanoscale electric field sensor. We fabricated vertical diamond p-i-n diodes containing the single NV centers. By performing optically detected magnetic resonance measurements under reverse-biased conditions with an applied voltage of up to 150 V, we found a large splitting in the magnetic resonance frequencies. This indicated that the NV center senses the transverse electric field in the space-charge region formed in the i-layer. The experimentally obtained electric field values are in good agreement with those calculated by a device simulator. Furthermore, we demonstrate the sensing of the electric field in different directions by utilizing NV centers with different N–V axes. This direct and quantitative sensing method using an electron spin in a wide-band-gap material provides a way to monitor the electric field in operating semiconductor devices.

Semiconductor nanostructures

10.1021/acsnano.6b04460

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Citations (98)

Structure due to indirect exciton in photocurrent spectrum of homoepitaxial diamond film

Solid State Communications (2004)

Kazuro Murayama Naoto Kodaira T. Makino Masahiko Ogura Shien Ri

Photocurrent

Photon energy

Absorption edge

10.1016/j.ssc.2004.11.048

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Citations (3)

Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2003)

Alexander V. Kolobov H. Ōyanagi Anatoly I. Frenkel Ian Robinson J. O. Cross

Nanocrystalline material

X-ray absorption spectroscopy

10.1016/s0168-583x(02)01556-2

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Citations (6)

Extension of Coherence Time under the Generation of Dressed states in NV Center Toward Hybrid Sensor

The Japan Society of Applied Physics (2018)

Daisuke Mima Hiroki Morishita Toshiyuki Tashima Hiromitsu Kato Toshiharu Makino

Center (category theory)

Coherence time

Source

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Citations (0)

Single crystal diamond membranes for nanoelectronics

Nanoscale (2018)

Kerem Bray Hiromitsu Kato Rodolfo Previdi Russell Sandstrom Kumaravelu Ganesan

Single crystal, nanoscale diamond membranes are highly sought after for a variety of applications including nanophotonics, nanoelectronics and quantum information science. However, so far, the availability of conductive diamond membranes has remained an unreachable goal. In this work we present a complete nanofabrication methodology for engineering high aspect ratio, electrically active single crystal diamond membranes. The membranes have large lateral directions, exceeding ∼500 × 500 μm2 and are only several hundreds of nanometers thick. We further realize vertical single crystal p-n junctions made from the diamond membranes that exhibit onset voltages of ∼10 V and a current of several mA. Moreover, we deterministically introduce optically active color centers into the membranes, and demonstrate for the first time a single crystal nanoscale diamond LED. The robust and scalable approach to engineer the electrically active single crystal diamond membranes offers new pathways for advanced nanophotonic, nanoelectronic and optomechanical devices employing diamond.

Nanoelectronics

Nanophotonics

10.1039/c7nr09097h

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Citations (29)

Atypical mycobacteriosis in two patients with rheumatoid arthritis

Modern Rheumatology (2002)

Tomoki Origuchi K. Migita Ayako Kawakami Satoshi Yamasaki Ayumi Hida

We report two cases of rheumatoid arthritis (RA) with atypical mycobacteriosis. Opportunistic infections are critical complications for rheumatic diseases. The use of steroids or immunosuppressants may increase the risk of opportunistic infections. However, these reports are rare in that they demonstrate atypical mycobacterial infections as complications of RA, even though no immunosuppressive agents were used. We discuss the characteristics of atypical mycobacterial infections of the lung in RA.

Mycobacterium Infections

Lung infection

10.1007/s101650200013

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Citations (1)