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D. L. Smith

Baylor College of Medicine

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P. P. Ruden

University of Minnesota

T. C. McGill

California Institute of Technology

I. H. Campbell

Australian National University

Avadh Saxena

Los Alamos National Laboratory

S. A. Crooker

Los Alamos National Laboratory

Feilong Liu

South China Normal University

Avadh Saxena

Los Alamos National Laboratory

Sergei Tretiak

Los Alamos National Laboratory

C. Mailhiot

Lawrence Livermore National Laboratory

R. B. James

Savannah River National Laboratory

Cooperative Institutions

Los Alamos National Laboratory

University of Illinois Urbana-Champaign

University of Minnesota

Los Alamos Medical Center

Center for Integrated Nanotechnologies

University of California, Santa Barbara

California Institute of Technology

Centre National de la Recherche Scientifique

University of Delaware

University of Adelaide

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Summary Abstract: HgTe–CdTe superlattices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena (1983)

T. C. McGill D. L. Smith

First Page

Cadmium telluride photovoltaics

10.1116/1.582498

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Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

Journal of Applied Physics (2007)

S. A. Crooker Madalina Furis X. Lou P. A. Crowell D. L. Smith

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.

Hanle effect

Spinplasmonics

Spin pumping

10.1063/1.2722785

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Citations (21)

Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel

MRS Proceedings (2007)

P. P. Ruden D. L. Smith

Ambipolar diffusion

Organic semiconductor

10.1557/proc-1003-o04-08

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Optical Properties of Small Band Gap Semiconductors Subject to Laser Excitation. Nonlinear Infrared Properties of Semiconductors.

T. C. McGill D. L. Smith

Abstract : A theoretical and experimental study of the optical properties of small band gap semiconductors subject to laser excitation and the nonlinear infrared properties of small band gap semiconductors subject to laser excitation and the nonlinear infrared properties of semiconductors has been carried out. These studies have led to an understanding of the nonradiative recombination mechanisms due to impurities via an Auger process. Predictions about the role of radiative and nonradiative processes in narrow band gap semiconductors have been made. Experiments performed on HgCdTe alloys with different composition provided the first systematic study of photoluminescence in these alloys and gave data that supported the conclusions on the relative importance of radiative and nonradiative processes in alloys. The study of the nonlinear infrared properties in the semiconductors resulted in the first complete theory of the phenomenon. Experiments to measure the role of impurities on the saturation intensity have given results in good agreement with theory. (Author)

10.21236/ada119264

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Spin noise spectroscopy to probe quantum states of ultracold fermionic atom gases

Bulletin of the American Physical Society (2006)

Bogdan Mihaila S. A. Crooker Krastan B. Blagoev D.G. Rickel P. B. Littlewood

Bogdan Mihaila, Scott A. Crooker, Krastan B. Blagoev, Dwight G. Rickel, Peter B. Littlewood, and Darryl L. Smith Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom Received 2 March 2006; published 7 December 2006

National laboratory

Ultracold atom

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Electron-Spin Filters Based on the Rashba Effect

David Z. Ting Xavier Cartoixà T. C. McGill J. S. Moon D. H. Chow

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Rashba effect

Spinplasmonics

Magnetic semiconductor

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Proposal for Manipulating Functional Interface Properties of Composite Organic Semiconductors with Addition of Designed Macromolecules

Physical Review Letters (2012)

P. Maniadis Turab Lookman Avadh Saxena D. L. Smith

The arrangement of the electronic levels in an interface between organic semiconductors is crucial for the operation of devices such as solar cells and light emitting diodes. With the addition of designed macromolecules, we show that it is possible to control the relative position of the highest occupied molecular orbital and lowest unoccupied molecular orbital levels, and consequently improve the performance. The designed macromolecules consist of two end segments, each compatible with one of the interface components, and a central segment which adds functionality to the interface. The tails control the position and the orientation of the functional units. When the central functional unit is an electric dipole, an electrostatic field is created due to the orientation of the dipoles, which shifts the electronic levels in a controlled way. We develop a theoretical framework, based on self-consistent field theory, to study the concentration and the orientation of the central functional units. We find that the levels can shift by as much as several tenths of an eV.

Interface (matter)

Position (finance)

Organic semiconductor

10.1103/physrevlett.108.257802

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Tunneling through a Short Interacting Wire

APS March Meeting Abstracts (2004)

D. Schmeltzer Avadh Saxena A. R. Bishop D. L. Smith

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Effect of structural distortion and polarization in localization of electronic excitations in organic semiconductor materials

Bulletin of the American Physical Society (2012)

Iffat Nayyar Enrique R. Batista Sergei Tretiak Avadh Saxena D. L. Smith

Organic semiconductor

Distortion (music)

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Intrinsic Spin Fluctuations Reveal the Dynamical Response Function of Holes Coupled to Nuclear Spin Baths in (In,Ga)As Quantum Dots

Physical Review Letters (2012)

Yan Li Nikolai A. Sinitsyn D. L. Smith D. Reuter Andreas D. Wieck

The problem of how single "central" spins interact with a nuclear spin bath is essential for understanding decoherence and relaxation in many quantum systems, yet is highly nontrivial owing to the many-body couplings involved. Different models yield widely varying timescales and dynamical responses (exponential, power-law, Gaussian, etc). Here we detect the small random fluctuations of central spins in thermal equilibrium (holes in singly-charged (In,Ga)As quantum dots) to reveal the timescales and functional form of bath-induced spin relaxation. This spin noise indicates long (400 ns) spin correlation times at zero magnetic field, that increase to $\sim$5 $\mu$s as hole-nuclear coupling is suppressed with small (100 G) applied fields. Concomitantly, the noise lineshape evolves from Lorentzian to power-law, indicating a crossover from exponential to inverse-log dynamics.

10.1103/physrevlett.108.186603

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Citations (81)

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