Kamaljit Rangra

Indian Institute of Technology Jodhpur

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Deepak Bansal

Desh Bhagat University

Prem Kumar

SRM Institute of Science and Technology

Amit Kumar

Central Electronics Engineering Research Institute

Maninder Kaur

Jaypee Institute of Information Technology

Anuroop Bajpai

Central Electronics Engineering Research Institute

Mahesh Angira

National Institute of Technology Hamirpur

Saakshi Dhanekar

Indian Institute of Technology Jodhpur

B. Margesin

Fondazione Bruno Kessler

Dinesh Kumar

Indian Agricultural Statistics Research Institute

Khushbu Mehta

Academy of Scientific and Innovative Research

Cooperative Institutions

Central Electronics Engineering Research Institute

Council of Scientific and Industrial Research

Indian Institute of Technology Jodhpur

Academy of Scientific and Innovative Research

Vivekananda Global University

Birla Institute of Technology and Science, Pilani

Fondazione Bruno Kessler

University of Rajasthan

University of Trento

Malaviya National Institute of Technology Jaipur

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QUASI-STATIC C-V MEASUREMENTS ON RF MEMS TEST STRUCTURES

Sensors and Microsystems (2004)

Leandro Lorenzelli Cristian Collini B. Margesin Kamaljit Rangra

10.1142/9789812702944_0070

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Low temperature bonding techniques for MEMS devices

Anuroop Deepak Bansal Prem Kumar Maninder Kaur Kamaljit Rangra

Conventional bonding techniques like fusion, glass frit, soldering, eutectic, and anodic bonding, have been used in packaging for micro-electro-mechanical systems (MEMS). These bonding techniques require high temperature which results in bending/buckling of MEMS devices especially in case of hanging structures. In this work, low temperature and low cost bonding techniques with commercially available epoxy 320 NC and photoresist SU-8 2010 are done. Bonding with commercially available epoxy 320 NC at room temperature leads to spreading of epoxy in device region and affects the device performance. To define bonding ring dimensions, photoresist SU 8 2010 is used as an adhesive. Sharp dimensions of SU 8 2010 bonding ring are achieved using lithography. Top silicon cap is fabricated using TMAH etching. The bonds made with these techniques gave good shear strength, as measured with an indigenous setup.

Anodic bonding

Photoresist

Wire bonding

Eutectic bonding

Adhesive Bonding

Thermocompression bonding

Wafer Bonding

10.1109/rsm.2015.7354958

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Design of Energy Harvesting Circuit for Low Power Application

Asian Journal of Managerial Science (2018)

Nitesh Kumar Dixit Kamaljit Rangra Yogesh Chandra Sharma

Piezoelectric energy harvesting is the technology to convert wasted vibration energy to an electrical energy output. A considerable amount of energy is dissipated in PEH to flip the output voltage through the internal capacitor and resistor of piezoelectric (PZT) material. One of the most effective techniques to harvest this power loss is called Synchronized Switch Harvesting on Inductor (SSHI) technique. Parallel SSHI technique has been used to flip the terminal voltage of the PEH through external inductor. A new simple and effective self-powered circuit has been introduced in this paper for this purpose. The new circuit uses two capacitors only to detect the flipping points of terminal voltage and enhance the power output

10.51983/ajes-2018.7.2.2277

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Impact of post deposition annealing in N2 ambient on structural properties of nanocrystalline hafnium oxide thin film

Journal of Materials Science Materials in Electronics (2016)

Shilpi Pandey Prateek Kothari Seema Verma Kamaljit Rangra

Nanocrystalline material

Ellipsometry

10.1007/s10854-016-5587-x

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Contact Area Design of Ohmic RF MEMS Switch for Enhanced Power Handling

Anuroop Deepak Bansal Khushbu Khushbu Prem Kumar Amit Kumar

RF MEMS switches are small in size, consume low power and have good RF response. However, the field deployment of RF MEMS switches is restricted due to limited power handling capability and reliability issues. In literature, power handling is improved through contact area either by adding hard materials or increasing the thickness. In the present paper, calculations for contact area versus stiction forces are performed and RF MEMS ohmic switch with optimal contact area is proposed and fabricated. The power handling of RF MEMS switch is increased by 55.86% without the addition of new material or processing steps. Insertion loss and return loss of the switch are also improved using corner compensation.

Stiction

Ohmic contact

Return loss

RF switch

Crossover switch

10.1109/icsenst.2018.8603623

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Compact 4-Bit DMTL Phase Shifter for K_uBand Applications

INROADS- An International Journal of Jaipur National University (2016)

Shilpi Pandey Deepak Bansal Maninder Kaur Kamaljit Rangra Seema Verma

This paper presents a compact design of DMTL based phase shifter for Ku band applications. Conventional approach for DMTL based phase shifters is to load CPW transmission line periodically with similar type of MEMS capacitors at particular spacing. In this paper, a novel approach is adapted to reduce the size as well as the number of switches by optimizing different unit cells for each section rather than fixed MIM capacitor. A4-bit phase shifter demonstrates an average insertion loss of 2.98 dB at 17GHz and has size of 4.5 mm with 7 MEMS bridges compared to 15 or 30 MEMS bridges using conventional approach. The pull-in voltage is simulated to 16 V and switching time is calculated to H ≍ 56μs at 20V.

Phase shift module

Bit (key)

10.5958/2277-4912.2016.00014.x

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A novel capacitive RF-MEMS switch for multi-frequency operation

Superlattices and Microstructures (2019)

Mahesh Angira Deepak Bansal Prem Kumar Khusbu Mehta Kamaljit Rangra

10.1016/j.spmi.2019.106204

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Citations (25)

Design and characterization of a compact Einzel lens for portable quadrupole mass spectrometry (QMS)

Instrumentation Science & Technology (2024)

Khushbu Mehta Ashudeep Minhas Maninder Kaur Amit Kumar Kamaljit Rangra

Quadrupole mass spectrometry (QMS) offers better resolution, selectivity and sensitivity than the metal-oxide, field effect transistors and thermal-based gas sensors. However, existing QMS systems are unsuitable for field applications. The miniaturized QMS requires dimensionally scaled components with comparable performance to the conventional bulky systems. For a portable quadrupole mass spectrometry, a compact focusing ion system is required to transfer the maximum number of ions from the ion source to the filter. The present paper discusses the design of a miniature focusing Einzel lens and the effect of design parameters on its performance. The three-cylindrical axially symmetric compact Einzel lens assembly was designed using commercially available software. The relationship between the design parameters is explored for compact and low-powered ion optics. The beam focal length was tuned by varying the bias voltage. The dimensions, as well as voltages across the Einzel lens, were reduced significantly to open a new way for portable point-of-care applications. At an applied voltage of 70 V, the focal length of the ions is 11 mm without being scattered, which is favorable for a portable quadrupole mass filter. The designed Einzel lens was fabricated using micromachining techniques and characterized at a vacuum of 3.05 × 10−4 mbar. The developed lens system shows a current output of 0.114 µA at 72 V lens voltage. A current of 94.8 µA is observed with a background noise of 0.01 µA for the system with nitrogen (28 amu) as the sample.

Electrostatic lens

10.1080/10739149.2024.2391522

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Compact high isolation and improved bandwidth hybrid RF MEMS SPDT switch for 5G applications

Microsystem Technologies (2019)

Anuroop Deepak Bansal Prem Kumar Amit Kumar Ashudeep Minhas

Frequency band

10.1007/s00542-019-04343-0

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Citations (7)

<title>Application of electron beam lithography to produce corrugated surface for DFB lasers</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1992)

P.R. Deshmukh M Shubhakanta Singh Kamaljit Rangra W.S. Khokle B.B. Pal

For long wavelength single node DFB type laser devices it Is required to rrugate the surface of InP substrate in the form of lines (Grating) with spatial period In sub-half micron ng. Electron beam lithography (E2L) can be used to make such high resolutlon lines first in the resist and then these lines can be transferred to the substrate by suitable dry or wet etching process. In delineating such closely spaced lines In the resist which Is coated on a relatively high average atctnic number substrate ( At.No.32), the well known proximity exposure (PE) effect associated with EBL requires cxrrection • The paper discusses arid gives the simulation results which depict the effect of PE on the width and spacing of lines. A comparison Is made between the lines on the lower At.No. substrate Si, and high At.No. InP substrate. A proximity exposure compensation (PEC) scheme based on dose variation technique is found to provide just adequate correction to PE effect. The experimental results on the delineation of lines before and after correction show good agreement with the simulated results within experimental limitations.

Dry etching

10.1117/12.636907

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