W. Li

Yale University

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R. G. Moore

Oak Ridge National Laboratory

Zhi‐Xun Shen

SLAC National Accelerator Laboratory

Makoto Hashimoto

SLAC National Accelerator Laboratory

Thomas Devereaux

SLAC National Accelerator Laboratory

Ming Yi

Rice University

F. Schmitt

SLAC National Accelerator Laboratory

Dong-Hui Lu

SLAC National Accelerator Laboratory

Yi Zhang

Hefei University

J. J. Lee

Stanford University

Yong‐Tao Cui

University of California, Riverside

Cooperative Institutions

Stanford University

SLAC National Accelerator Laboratory

Lawrence Berkeley National Laboratory

Stanford Synchrotron Radiation Lightsource

University of California, Berkeley

Chinese Academy of Sciences

Tsinghua University

Linac Coherent Light Source

Material Sciences (United States)

Baylor University

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Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-DopedSrTiO3Substrate

Physical Review Letters (2015)

Yong‐Tao Cui R. G. Moore Anxin Zhang Yong Tian J. J. Lee

We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped ${\mathrm{SrTiO}}_{3}$, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near the $\mathrm{FeSe}/{\mathrm{SrTiO}}_{3}$ interface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.

Interface (matter)

10.1103/physrevlett.114.037002

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Citations (26)

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

Scientific Reports (2016)

W. Li Martin Claassen Cui‐Zu Chang Brian Moritz Tao Jia

Abstract The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2 Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2 Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

Topological insulator

10.1038/srep32732

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Discovery of Charge Order in the Transition Metal Dichalcogenide FexNbS2

Physical Review Letters (2023)

Shan Wu Rourav Basak W. Li Jong‐Woo Kim Philip J. Ryan

The Fe intercalated transition metal dichalcogenide (TMD), ${\mathrm{Fe}}_{1/3}{\mathrm{NbS}}_{2}$, exhibits remarkable resistance switching properties and highly tunable spin ordering phases due to magnetic defects. We conduct synchrotron x-ray scattering measurements on both underintercalated ($x=0.32$) and overintercalated ($x=0.35$) samples. We discover a new charge order phase in the overintercalated sample, where the excess Fe atoms lead to a zigzag antiferromagnetic order. The agreement between the charge and magnetic ordering temperatures, as well as their intensity relationship, suggests a strong magnetoelastic coupling as the mechanism for the charge ordering. Our results reveal the first example of a charge order phase among the intercalated TMD family and demonstrate the ability to stabilize charge modulation by introducing electronic correlations, where the charge order is absent in bulk $2\mathrm{H}\text{\ensuremath{-}}{\mathrm{NbS}}_{2}$ compared to other pristine TMDs.

10.1103/physrevlett.131.186701

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Direct Optical Coupling to an Unoccupied Dirac Surface State in the Topological InsulatorBi2Se3

Physical Review Letters (2013)

Jonathan A. Sobota Shuolong Yang Alexander F. Kemper J. J. Lee F. Schmitt

We characterize the occupied and unoccupied electronic structure of the topological insulator ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ by one-photon and two-photon angle-resolved photoemission spectroscopy and slab band structure calculations. We reveal a second, unoccupied Dirac surface state with similar electronic structure and physical origin to the well-known topological surface state. This state is energetically located 1.5 eV above the conduction band, which permits it to be directly excited by the output of a Ti:sapphire laser. This discovery demonstrates the feasibility of direct ultrafast optical coupling to a topologically protected, spin-textured surface state.

Topological insulator

Surface States

10.1103/physrevlett.111.136802

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Citations (157)

Anatomy of skyrmionic textures in magnetic multilayers

Conference on Multimedia Modeling (2019)

W. Li Iuliia Bykova S. Zhang Guoqiang Yu Riccardo Tomasello

Source

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Increased bilateral expression of α1-adrenoceptors on peripheral nerves, blood vessels and keratinocytes does not account for pain or neuroinflammatory changes after distal tibia fracture in rats

Neuroscience (2014)

Eleanor Drummond Linda F. Dawson P.M. Finch W. Li T.-Z. Guo

Tibia Fracture

10.1016/j.neuroscience.2014.09.046

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Quasiparticle and excitonic properties of monolayer 1T′ WTe2 within many-body perturbation theory

Physical review. B./Physical review. B (2024)

Jinyuan Wu Bowen Hou W. Li Yu He Diana Y. Qiu

Among existing band structure predictions of the topological monolayer 1$T$`-WTe${}_{2}$, only a semi-empirical hybrid functional has been able to reproduce the gapped electronic structure observed by angle-resolved photoemission spectroscopy (ARPES). Here, the authors demonstrate that the electronic band structure can be obtained by updating the quasiparticle wave functions within many-body perturbation theory (MBPT). Moreover, Bethe-Salpeter equation (BSE) on top of the gapped band structure leads to negative exciton frequencies, suggesting a possible exciton instability consistent with experimental evidence.

10.1103/physrevb.110.075133

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Interfacial mode coupling as the origin of the enhancement of Tc in FeSe films on SrTiO3

Nature (2014)

J. J. Lee F. Schmitt R. G. Moore Steven Johnston Yong‐Tao Cui

Mode (computer interface)

10.1038/nature13894

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Citations (632)

Femtosecond electron-phonon lock-in by photoemission and x-ray free-electron laser

Science (2017)

Simon Gerber Shuolong Yang Diling Zhu Hadas Soifer Jonathan A. Sobota

A deeper look into iron selenide In the past 10 years, iron-based superconductors have created more puzzles than they have helped resolve. Some of the most fundamental outstanding questions are how strong the interactions are and what the electron pairing mechanism is. Now two groups have made contributions toward resolving these questions in the intriguing compound iron selenide (FeSe) (see the Perspective by Lee). Gerber et al. used photoemission spectroscopy coupled with x-ray diffraction to find that FeSe has a very sizable electron-phonon interaction. Quasiparticle interference imaging helped Sprau et al. determine the shape of the superconducting gap and find that the electron pairing in FeSe is orbital-selective. Science , this issue p. 71 , p. 75 ; see also p. 32

Selenide

Electron pair

Femtochemistry

10.1126/science.aak9946

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Citations (216)

(351) Neuropeptide regulation of adaptive immune responses after fracture

Journal of Pain (2016)

Wade S. Kingery W. Li T.-Z. Guo Xiaoshuang Shi J. David Clark

10.1016/j.jpain.2016.01.258

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