Z Z Zhang

Changchun Institute of Optics, Fine Mechanics and Physics

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Rui Deng

First Affiliated Hospital of Jiangxi Medical College

Yongfeng Li

Jilin University

J Y Zhang

Chinese Academy of Sciences

Bin Yao

Jilin University

D. Z. Shen

Beijing Academy of Artificial Intelligence

D. Z. Shen

Chinese Academy of Sciences

Bo Yao

Beijing Institute of Technology

You Lü

Daresbury Laboratory

B H Li

Changchun Institute of Optics, Fine Mechanics and Physics

W W Liu

Cooperative Institutions

Chinese Academy of Sciences

Changchun Institute of Optics, Fine Mechanics and Physics

Jilin University

Zhengzhou University

State Key Laboratory of Superhard Materials

PowerChina (China)

Institute of Semiconductors

Institute of Physics

Beijing Institute of Technology

Hangzhou Normal University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate

Chinese Journal of Luminescence (2010)

Bo-Ying Li Bo Yao Yongfeng Li Rui Deng Z Z Zhang

ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasma-assisted molecular beam expitaxy. An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes. Comparing with the n-ZnO/p-GaAs heterojunction, the ZnO/MgO/p-GaAs heterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V. Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak.

Ultraviolet

Source

Cite

Citations (0)

Ultraviolet photodiode based on p-Mg_0.2Zn_0.8O/n-ZnO heterojunction with wide response range

Journal of Physics D Applied Physics (2009)

Yongfeng Li Bin Yao Rui Deng B H Li J Y Zhang

P-Mg0.2Zn0.8O/n-ZnO heterojunction ultraviolet photodiode was fabricated on a sapphire substrate by plasma-assisted molecular beam epitaxy. The current–voltage measurement indicates that the heterojunction has a weak rectifying behaviour with a turn-on voltage of ∼5 V. The spectral response measurement shows that the photodiode has a peak responsivity at around 340 nm, and it has a wide detection range in the ultraviolet region from 400 to 320 nm. The response in the long and short wavelength region is due to the contribution of the n-ZnO and p-MgZnO layers, respectively. The ultraviolet–visible rejection ratio (R340 nm/R500 nm) of two orders of magnitude was obtained at a reverse bias of 8 V.

Photodiode

Ultraviolet

10.1088/0022-3727/42/10/105102

Cite

Citations (35)