K. Yu. Shubina

St Petersburg University

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A. M. Mizerov

St Petersburg University

T. N. Berezovskaya

St Petersburg University

D. V. Mokhov

St Petersburg University

E. V. Nikitina

St Petersburg University

S. N. Timoshnev

Ioffe Institute

A. D. Bouravleuv

Saint Petersburg State Electrotechnical University

E. V. Pirogov

St Petersburg University

M. S. Sobolev

St Petersburg University

Yakov Enns

Peter the Great St. Petersburg Polytechnic University

A Kazakin

Peter the Great St. Petersburg Polytechnic University

Cooperative Institutions

Saint Petersburg Academic University

St Petersburg University

Ioffe Institute

Russian Academy of Sciences

ITMO University

Physico-Technical Institute

Peter the Great St. Petersburg Polytechnic University

Saint Petersburg State Electrotechnical University

Institute for Analytical Instrumentation

Physical and Technical Institute

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Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

Semiconductors (2018)

K. Yu. Shubina T. N. Berezovskaya D. V. Mokhov I. A. Morozov K. P. Kotlyar

Isotropic etching

Plasma Etching

Dry etching

10.1134/s1063782618160297

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Citations (3)

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

Semiconductors (2018)

A. M. Mizerov S. N. Timoshnev M. S. Sobolev E. V. Nikitina K. Yu. Shubina

Polarity (international relations)

Stoichiometry

10.1134/s1063782618120175

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Citations (19)

Annealing Temperature Effect on the Physical Properties of NiO Thin Films Grown by DC Magnetron Sputtering (Adv. Mater. Interfaces 9/2024)

Advanced Materials Interfaces (2024)

S. N. Timoshnev A Kazakin K. Yu. Shubina В. Д. Андреева Elizaveta Fedorenko

Non-blocking I/O

10.1002/admi.202470026

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Citations (0)

Separation of III-N partially-coalesced nanowire arrays from Si substrate

Journal of Physics Conference Series (2021)

V. V. Lendyashova K. P. Kotlyar Vladislav O. Gridchin R. R. Reznik A. I. Lihachev

Abstract In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO 3 solution, which allows preserving the optical properties of the structure for further use.

Isotropic etching

10.1088/1742-6596/2086/1/012191

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Citations (1)

Formation of Transparent Contacts to p-NiO by DC Magnetron Sputtering ITO

2022 International Conference on Electrical Engineering and Photonics (EExPolytech) (2023)

Yakov Enns A Kazakin В. Д. Андреева S. N. Timoshnev K. Yu. Shubina

This paper investigates the optical and electrical properties of ITO films for their application as a transparent contact electrode to NiO films. The films were fabricated by magnetron sputtering at various parameters of the discharge power and oxygen content in the working gas mixture. Structural analysis showed an increase in the crystallinity of the films during their subsequent annealing. The films demonstrate high conductivity and transparency with an absorption edge higher than that of NiO films. The results of the study show a high potential for using ITO films to create a transparent electrode to NiO layers.

Non-blocking I/O

10.1109/eexpolytech58658.2023.10318652

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Citations (1)

Silicon Echelles for Soft X-Ray and Extreme UV Radiation: Influence of the Camber of the Reflective Facet on the Diffraction Efficiency

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques (2023)

Leonid I. Goray T. N. Berezovskaya D. V. Mokhov V. A. Sharov K. Yu. Shubina

Facet (psychology)

Camber (aerodynamics)

10.1134/s1027451023070145

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Citations (0)