Mykola Sopinskyy

Research Field

Abstract Polytetrafluoroethylene (PTFE) films are deposited in parallel and perpendicular magnetic fields (MF) by electron‐enhanced vacuum deposition (EVD) and EVD + low‐temperature plasma (LTP) methods. The structure, morphology, and nanomechanical properties of the films are studied by infrared spectroscopy (IRS), atomic force microscopy (AFM), and spectroscopic ellipsometry. The structure of the thicker films is closer to that of bulk PTFE than that of thin films. The films' crystallinity and surface roughness are higher than those deposited without MF. The birefringence of the refractive index (n) of the films deposited in the MF is inverse to the anisotropy of the n of the films deposited without MF. The hardness of the films is close to that of bulk PTFE.

Deposition

Vacuum deposition

10.1002/mame.202400332

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Formation of Profiled Holographic Diffraction Gratings Using Physicochemical Interaction in As2Se3-Ag System

Mykola Sopinskyy Peter F. Romanenko I. Z. Indutnyy E. F. Venger

Abstract : The method of blazed holographic diffraction gratings fabrication by transformation of an original symmetric grating grooves into asymmetric ones using inclined vacuum deposition of silver and additional chemical etching have been developed. As photoresist material for gratings recording light-sensitive chalcogenide glassy As2Se3 layers were used. The shape of grating grooves was determined with an atomic force microscope. Angular and spectral dependencies of the diffraction efficiency of the gratings were found, and a relation between optical features and the grating surface pattern was analyzed.

Diffraction efficiency

Photoresist

Electromagnetically induced grating

Source

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Citations (3)

Polarized luminescence of silicon nanoparticles formed in (SiOx–SiOy)n superlattice

Applied Nanoscience (2021)

Katerina Michailovska Viktor Dan’ko И. З. Индутный P. E. Shepeliavyi Mykola Sopinskyy

Dangling bond

Porous Silicon

Passivation

10.1007/s13204-021-01671-4

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Citations (1)

Formation of silicon nanocomposites by annealing of (SiOx/Sm)n multilayers: luminescence, Raman and FTIR studies

Applied Nanoscience (2023)

Katerina Michailovska И. З. Индутный P. E. Shepeliavyi Mykola Sopinskyy Viktor Dan’ko

Silicon oxide

10.1007/s13204-023-02887-2

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Citations (1)

Further study of CdWO4 crystal scintillators as detectors for high sensitivity experiments: Scintillation properties and pulse-shape discrimination

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (2006)

L. Bardelli M. Bini P. G. Bizzeti L. Carraresi F.A. Danevich

Crystal (programming language)

10.1016/j.nima.2006.09.094

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Citations (75)

Luminescent and Raman study of nanostruc-tures formed upon annealing of SiOx:Sm films

Semiconductor Physics Quantum Electronics & Optoelectronics (2023)

Katerina Michailovska И. З. Индутный P. E. Shepeliavyi Mykola Sopinskyy Viktor Dan’ko

ncs-Si–SiO x :Sm structures formed by high-temperature air annealing of the SiO x films doped with samarium during thermal co-evaporation in vacuum of silicon monoxide and metallic Sm was studied. By measuring the spectra of photoluminescence (PL), it has been shown that doping of SiO x films with Sm stimulates their decomposition into Si and SiO 2 , and also reduces the transition temperature of silicon nanoparticle from the amorphous state to the crystalline one. With an increase in the impurity content up to 2 wt.%, along with the ncs-Si luminescence, the PL spectrum exhibits emission bands of Sm 3+ and Sm 2+ ions, which do not appear at a lower Sm concentration. The presence of silicon nanocrystals in SiO x films doped with Sm and annealed at 970 °C in air has been confirmed using Raman scattering spectra. A possible mechanism for interaction of samarium ions with the SiO x matrix and ncs-Si has been discussed.

Silicon monoxide

Vacuum evaporation

10.15407/spqeo26.01.068

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Citations (1)

Impact of Surface Plasmon Polaritons on Silver Photodiffusion into As2S3 Film

Plasmonics (2020)

И. З. Индутный V. I. Mynko Mykola Sopinskyy P. M. Lytvyn

Photoresist

10.1007/s11468-020-01275-8

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Citations (10)