K. P. Martin

University College Cork

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R. J. Higgins

Vitenparken

J.D. Meindl

American College of Surgeons

Muhannad S. Bakir

Georgia Institute of Technology

Paul A. Kohl

Georgia Institute of Technology

J. Sebastián

Universidad de Oviedo

J. J. L. Rascol

Georgia Institute of Technology

Manuel Arias

Instituto Universitario Italiano de Rosario

R. E. Carnahan

Georgia Institute of Technology

Timothy J. Drabik

Georgia Institute of Technology

Aitor Vázquez

Universidad de Oviedo

Cooperative Institutions

Hong Kong Polytechnic University

172

University of the Basque Country

171

Bangalore University

170

Nokia (United Kingdom)

166

Georgia Institute of Technology

Centre National de la Recherche Scientifique

Meta (Israel)

IBM (United States)

Stanford University

Institut National des Sciences Appliquées de Toulouse

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On Bidirectional DC Nano-Grids: Design Considerations and an Architecture Proposal

Energies (2019)

Aitor Vázquez K. P. Martin Manuel Arias J. Sebastián

The use of DC distribution networks has several advantages, especially for energy saving and integration of energy storage system and renewable energies. In this regard, DC nano-grids are a very interesting solution when distributing electrical power in households. In this paper, an analysis about the possible bidirectional capability of this DC nano-grid is presented. The end-user can freely connect either a passive load (demanding power) or an active one (able to sink current to the grid). The analysis is divided into three different parts. First, a discussion about the most promising power architecture is addressed, taking into consideration the loads in a house. Second, a standard for voltage regulation in a bidirectional DC nano-grid is proposed. Finally, a possible bus provider for this particular bidirectional DC nano-grid is also addressed. This power converter is based on a Dual Active Bridge cascaded with five synchronous buck converters. The key design aspects of the proposed topology are analyzed to emphasize the particular constraints imposed by the standard and the power architecture. A 500 W, 380 V to 24 V bidirectional bus provider has been built in order to experimentally validate the standard proposal and the design aspects.

Buck converter

10.3390/en12193715

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Citations (9)

Interconnecting device opportunities for gigascale integration (GSI)

J.D. Meindl V. Ramakrishnan Jeffrey A. Davis J.W. Joyner Azad Naeemi

In recent years interconnecting devices have become primary limits on the performance, energy dissipation, signal integrity, and productivity of gigascale integration (GSI). Opportunities to address the interconnect problem include new materials and processes, reverse scaling, novel microarchitectures, three-dimensional integration, input/output interconnect enhancements, RF wireless interconnects and microphotonics.

10.1109/iedm.2001.979560

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Citations (36)

Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction

Applied Physics Letters (1990)

S. Ben Amor L. Dmowski J.C. Portal K. P. Martin R. J. Higgins

We report a study of the subband structure of Ga0.49In0.51P/GaAs heterojunctions. High-field (0<B<20 T) magnetotransport measurements were performed at low temperatures (4.2 K) under hydrostatic pressure (P<12 kbar). The strong persistent photoconductivity effect in this system allowed us to tune the two-dimensional electron gas (2DEG) density (N2D) with short light bursts from a red electroluminescent diode. The pressure dependence of N2D shows that in contrast with other systems, pressure effects on the band discontinuity and the effective mass are responsible for the observed density dependence. Both single particle (quantum) and scattering (classical) lifetimes were measured. The ratio of the classical-to-quantum lifetimes was large (≊10) at ambient pressure and confirmed the dominant role of scattering by remote ionized impurities. After illumination, the ratio quickly decreases with increasing 2DEG density. However when pressure is applied, this ratio decreases with decreasing N2D, giving evidence of a pressure-induced misfit strain at the interface that modifies the dominant scattering mechanisms.

Hydrostatic pressure

10.1063/1.103732

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Citations (7)

Magneto electric states in wide-well double barrier tunneling structures

Surface Science (1990)

S. Ben Amor K. P. Martin J. J. L. Rascol R. J. Higgins Robert Potter

Biasing

Lattice (music)

10.1016/0039-6028(90)90332-3

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Citations (0)

Thermometry in high magnetic fields at low temperatures

Review of Scientific Instruments (1983)

Michael Naughton Stephen J. Dickinson R. C. Samaratunga J. S. Brooks K. P. Martin

We have investigated the behavior of carbon resistor and capacitive thermometers from 4.2 to below 0.1 K and to 19 T. We observe, in agreement with previous work at higher temperatures, a nonmonotonic magnetoresistance in a standard carbon resistor for thermometry below 1.0 K. We provide the reader with an expression for the magnetoresistance which may be used, with proper precalibration for a particular sensor, to determine the temperature from a reading of the resistance and the magnetic field. In addition, we discuss epoxy mixing chambers for dilution refrigerators and discuss results which indicate that certain materials can be magnetized and demagnetized at low temperatures. Finally, we report measurements on two types of capacitive temperature sensors which also exhibit magnetoeffects.

10.1063/1.1137290

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Citations (47)

Evolution of superfluid turbulence in thermal counterflow

Physical review. B, Condensed matter (1983)

K. P. Martin J. T. Tough

Using two complementary techniques, we have for the first time determined the full evolution of superfluid turbulence in a single circular tube. Our analysis shows that the evolution of the turbulence from laminar flow through the two turbulent states T I and T II is independent of the tube size and is probably a generic feature of the circular geometry. This important result finally allows a reliable comparison to be made of data from wide and narrow tube experiments. The parameters of states T I and T II are found to be well defined by these experiments, and comparison to the theory of Schwarz suggests that the fully developed state T II is reasonably homogeneous. The transition from laminar flow to state T I is consistent with previous results showing a critical density of quantized vortex lines in the turbulence. Our analysis suggests that this concept may be extended to the transition from T I to T II. Associated with this second transition is an intrinsic relaxation time that appears to diverge at the critical velocity.

Vortex Tube

10.1103/physrevb.27.2788

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Citations (71)

Determination of transport coefficients in high mobility heterostructure systems in the presence of parallel conduction

Applied Physics Letters (1986)

D. A. Syphers K. P. Martin R. J. Higgins

The effect of a parasitic parallel conducting layer on the measurement of longitudinal and transverse magnetoresistances of a high mobility two-dimensional (2D) electron gas in modulation-doped heterostructures is considered. A circuital analysis which takes into account the effect of circulating currents at the Hall contacts is presented, and previous descriptions of this situation are shown to be inapplicable. The resultant equations correctly predict the behavior of the longitudinal and transverse magnetoresistances at both high and low magnetic fields, and correlate well with the measured values. They also allow one to accurately determine the 2D mobility and density as well as the parallel layer resistivity.

Electron Mobility

Modulation (music)

10.1063/1.97103

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Citations (33)

Observation of resonant tunneling through localized continuum states in electron wave interference diodes

Applied Physics Letters (1994)

R. E. Carnahan M. A. Maldonado K. P. Martin R. J. Higgins J.P.A. van der Wagt

A 13 layer aperiodic semiconductor superlattice electron wave interference filter, designed with thin-film optical interference filter techniques by using the analogies between electromagnetic wave propagation in dielectrics and ballistic electron wave propagation in semiconductors, was realized in the GaAs/AlGaAs material system. Current-voltage measurements at 300 and 77 K show negative differential resistance peaks (with peak-to-valley current ratios of 1.25 and 3.9, respectively) that represent observation of tunneling through an above barrier localized quasibound state. We show that electron wave interference devices could compete with resonant tunneling diodes as high frequency oscillators based on dc device characteristics and theoretical subpicosecond tunneling traversal times.

Tunnel diode

10.1063/1.111604

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Improving electron beam resist sensitivity by preexposure to deep ultraviolet radiation

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (2007)

Raghunath Murali Devin K. Brown K. P. Martin J.D. Meindl

Electron beam lithography, when combined with optical lithography, is a promising approach to obtain good throughput. A bottleneck for this is resist sensitivity and the concomitant shot-noise limit for resolution. It is possible to obtain increased sensitivity without reducing resolution by preexposing electron beam resist to deep ultraviolet radiation before electron beam patterning. Results show that up to a 30% reduction in required dosage is obtained with this method; the associated trade off in dissolution of unexposed areas and critical dimension sensitivity is minimal. Resolution is also maintained and sub-50nm lines with good aspect ratio have been demonstrated.

Extreme Ultraviolet Lithography

Ultraviolet

10.1116/1.2794070

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Confidentiality in the Age of AIDS: A Case Study in Clinical Ethics

The Journal of Clinical Ethics (1993)

Martin L. Smith K. P. Martin

Clinical Ethics

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10.1086/jce199304307

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Citations (4)