Jung‐Hyung Kim

Korea Research Institute of Standards and Science

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Hyo‐Chang Lee

Korea Aerospace University

S. J. You

Chungnam National University

H. J. Yeom

Korea Research Institute of Standards and Science

Min Young Yoon

Korea Research Institute of Standards and Science

Hong‐Young Chang

Korea Advanced Institute of Science and Technology

Gwang-Seok Chae

Korea Aerospace University

Dae-Jin Seong

Korea Research Institute of Standards and Science

Deuk-Chul Kwon

Korea Institute of Fusion Energy

Yong‐Hyeon Shin

Seoul National University of Science and Technology

Jong‐Ryul Jeong

Chungnam National University

Cooperative Institutions

Korea Research Institute of Standards and Science

Korea Advanced Institute of Science and Technology

Samsung (South Korea)

Chungnam National University

Seoul National University

Hanyang University

Daejeon University

Yonsei University

Korea Aerospace University

Korea Institute of Materials Science

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Plasma etching resistance and mechanical properties of polymorph Gd2O3-MgO nanocomposite with Zr phase stabilizer incorporation

Applied Surface Science (2024)

Su Been Ham Y.T. Shin Seonghyun Kim Ha‐Neul Kim Mi‐Ju Kim

Stabilizer (aeronautics)

10.1016/j.apsusc.2024.160890

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Citations (1)

Characteristics of self bias voltage and poly-Si etching in pulsed helicon wave plasma

Thin Solid Films (1999)

Jung‐Hyung Kim Chang-Jin Kang Tae-Hyuk Ahn Joo-Tae Moon

Helicon

Biasing

Plasma Etching

10.1016/s0040-6090(99)00108-x

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Citations (11)

Transmission spectrum analysis of ceramic-shielded microwave cutoff probes in low-pressure plasmas

Journal of Applied Physics (2024)

Do-Yeon Hwang H. J. Yeom Ga‐Won Lee Jung‐Hyung Kim Hyo‐Chang Lee

In this study, the influence of ceramic shield characteristics, including thickness and geometry, on the transmission spectrum and electron density measurements of a ceramic shield cutoff probe (CSC) was investigated to measure high-density or process plasma. Through electromagnetic simulations and circuit modeling, we examined the measurement characteristics of the CSC based on different ceramic shield geometries. When the ceramic shield is sufficiently thin, it does not affect the CSC wave transmission characteristics. However, for a thick ceramic shield, a cutoff frequency shift of up to 3% toward the lower side can occur. This shift is attributed to the electrical properties of the ceramic material, which can function as a parasitic capacitor. In addition, when fabricating a CSC, depending on the shape of the ceramic shield or the method used to couple it with the CSC body, a cutoff frequency shift can occur toward the lower side. The simulation results were validated through experiments, revealing a cutoff frequency shift toward the lower side of up to 18.0% in the simulations and up to 11.6% in the experiments. The findings of this study could assist in high-density or processing plasma measurements using cutoff probes.

Cutoff frequency

Cut-off

10.1063/5.0214696

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Citations (0)

Discharge physics and atomic layer etching in Ar/C4F6 inductively coupled plasmas with a radio frequency bias

Physics of Plasmas (2021)

Min Young Yoon H. J. Yeom Jung‐Hyung Kim Won Chegal Yong Jai Cho

Atomic layer etching (ALE), a cyclic process of surface modification and removal of the modified layer, is an emerging damage-less etching technology for semiconductor fabrication with a feature size of less than 10 nm. Among the plasma sources, inductively coupled plasma (ICP) can be a candidate for ALE, but there is a lack of research linking discharge physics to the ALE process. In this study, we comprehensively investigated the discharge physics of ICPs with a radio frequency (RF) bias and Ar/C4F6 mixture to be considered for the ALE process. Detailed studies on the discharge physics were conducted in each step of ALE (i.e., modification step, removal step) as well as the whole cycle as follows: (1) In the general ALE cycle, plasma properties dependent on the chamber geometry and the discharge mode of the ICP were analyzed; (2) in the modification step, a plasma instability with molecular gas was observed. The timescale for molecular gas removal was also investigated; (3) in the removal step, changes in plasma characteristics with the RF bias power were studied. Based on measurements of these plasma physical parameters, the discharge condition for ALE was optimized. ALE was performed on various thin films, including a-Si, poly c-Si, SiO2, and Si3N4. For each thin film, thicknesses of 0.5–2.0 nm were etched per cycle, as in quasi-ALE. Finally, ALE was performed on a patterned wafer, and the etch thickness of 0.6 nm per cycle and fine etch profile were obtained.

Plasma Etching

10.1063/5.0047811

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Citations (41)

High Aspect Ratio Trench Etching Under Ion Tilting in Rf Biased Inductively Coupled Plasma

SSRN Electronic Journal (2022)

Min Young Yoon H. J. Yeom Jung‐Hyung Kim Jong‐Ryul Jeong Hyo‐Chang Lee

For next-generation semiconductor manufacturing, vertical ion-bombardment during plasma etching is a key factor in obtaining high performance devices. However, the ion trajectory on the wafer can vary owing to the physical discontinuity between the wafer termination and the focus ring. In this study, we developed a method to qualify the plasma etching result in highaspect-ratio trench with ion tilting by using the natural sheath curvature at the wafer edge. The experiment was investigated in a radio-frequency-biased inductively coupled plasma with an Ar/C 4 F 6 mixture. It is revealed that even a slight ion tilts (1–3°) induce large changes in etch characteristics, such as etch-stop, asymmetric and vertical etching, which strongly depend on the trench arrangement, location, and aspect ratio. These phenomena were analyzed using the relationship between the electric field angle (𝜃 E ) at the sheath curvature and the critical angle (𝜃 c ) for ions reaching the trench bottom. It was confirmed that: i) bottom etch stops when 𝜃 E >

Plasma Etching

10.2139/ssrn.4004653

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Citations (0)

Crystalline silicon nanoparticle formation by tailored plasma irradiation: self-structurization, nucleation and growth acceleration, and size control

Nanoscale (2021)

Daehan Choi Jung‐Hyung Kim Deuk-Chul Kwon Chae Ho Shin Hyun Ryu

The self-structurization process of crystalline Si nanoparticles from a-Si thin film surface by tailored Ar plasma irradiation: Nucleation, growth and size control by extremely-low ion energy transfer.

10.1039/d1nr00628b

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Citations (5)

Effect of radiofrequency bias power on transmission spectrum of flat-cutoff sensor in inductively coupled plasma

Physics of Plasmas (2024)

H. J. Yeom Gwang-Seok Chae Min Young Yoon W. Kim J.H. Lee

Real-time monitoring of plasma parameters at the wafer plane is important because it significantly affects the processing results, yield enhancement, and device integrity of plasma processing. Various plasma diagnostic sensors, including those embedded in a chamber wall and on-wafer sensors, such as flat-cutoff sensors, have been developed for plasma measurements. However, to measure the plasma density on the wafer surface in real-time when processing plasma with bias power, such as in the semiconductor etching process, one must analyze the transmission spectrum of the flat-cutoff sensor in an environment with bias power applied. In this study, the transmission-spectrum and measured plasma-density characteristics of an electrode-embedded flat-cutoff sensor are analyzed via electromagnetic simulations and experiments under applied bias power. Our findings indicate that the flat-cutoff sensor accurately measures the plasma density, which is equivalent to the input plasma density under low bias power. Conversely, under high bias power, the plasma density measured by the sensor is lower than the input plasma density. Also, a thick-sheath layer is formed owing to the high bias power, which may complicate the measurement of plasma parameters using the flat-cutoff sensor. Plasma diagnostics using a flat-cutoff sensor in thick-sheath environments can be achieved by optimizing the flat-cutoff sensor structure. Our findings can enhance the analysis of plasma parameters on-wafer surfaces in processing environments with bias power applied.

Cut-off

Cutoff frequency

10.1063/5.0221016

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Citations (1)

Study on self-bias voltage induced on the substrate by r.f. bias power in a high density plasma

Thin Solid Films (2003)

Jung‐Hyung Kim Yonghyun Shin Kwang Hwa Chung

Helicon

Biasing

Plasma Etching

DC bias