David J. Thomson

University of Southampton

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Graham T. Reed

University of Southampton

252

Frédéric Y. Gardes

University of Southampton

141

Callum G. Littlejohns

University of Southampton

Goran Z. Mashanovich

University of Southampton

Ali Z. Khokhar

University of Southampton

Ke Li

Harbin University of Science and Technology

Weiwei Zhang

University of Southampton

Mehdi Banakar

University of Southampton

Wei Cao

University of Southampton

Miloš Nedeljković

University of Southampton

Cooperative Institutions

University of Southampton

178

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

CEA LETI

University of York

University of Maryland, College Park

Centre National de la Recherche Scientifique

University of Surrey

Université Grenoble Alpes

CEA Grenoble

Institut polytechnique de Grenoble

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Recent results in silicon photonics at the University of Southampton

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2014)

Graham T. Reed Goran Z. Mashanovich Frédéric Y. Gardes David J. Thomson Y. Hu

In this paper we will discuss recent results in our work on Silicon Photonics. This will include active and passive devices for a range of applications. Specifically we will include work on modulators and drivers, deposited waveguides, multiplexers, device integration and Mid IR silicon photonics. These devices and technologies are important both for established applications such as integrated transceivers for short reach interconnect, as well as emerging applications such as disposable sensors and mass market photonics.

Transceiver

10.1117/12.2045490

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A robust and fabrication tolerant (de)multiplexer on the SOI platform

Asia Communications and Photonics Conference 2021 (2014)

Graham T. Reed Y. Hu David J. Thomson Frédéric Y. Gardes Goran Z. Mashanovich

We recently demonstrated the angled multimode interferometer (AMMI) as a wavelength (de)multiplexer for 4 channels. We have now extended the device application to eight channels via interleaving, and we propose denser integration via ring resonator enhancement.

Interleaving

10.1364/acpc.2014.af3b.6

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Locally Erasable Couplers for Optical Device Testing in Silicon on Insulator

Journal of Lightwave Technology (2014)

R. Topley G.Z. Mashanovich Graham T. Reed G. Martinez-Jimenez Liam O’Faoláin

Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit. The method is based on diffractive grating couplers, fabricated using lattice damage induced by ion implantation of germanium. These gratings can be erased via localised laser annealing, which is shown to reduce the outcoupling efficiency by over 20 dB after the device testing is completed. Laser annealing was achieved by employing a CW laser, operating at visible wavelengths thus reducing equipment costs and allowing annealing through thick oxide claddings. The process used also retains CMOS compatibility.

10.1109/jlt.2014.2324018

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Citations (29)

Device-level characterization of the flow of light in integrated photonic circuits using ultrafast photomodulation spectroscopy

Nature Photonics (2014)

Roman Bruck B. Mills Benedetto Troia David J. Thomson Frédéric Y. Gardes

Characterization

Modulation (music)

10.1038/nphoton.2014.274

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Citations (49)

Buried 3D silicon photonics spot-size convertors

Weiwei Zhang Martin Ebert Jamie D. Reynolds Bigeng Chen Xingzhao Yan

A buried three-dimensional spot size converter has been demonstrated in silicon on insulator photonics platform for the first time enabling low loss optical mode conversion between micron and submicron scale waveguides, which provides new solutions for fibre (chip) to chip coupling for co-package optics applications.

Silicon chip

Coupling loss

10.1109/gfp51802.2021.9673849

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Dataset for: A universal 3D imaging sensor on a silicon photonics platform

Christopher Rogers Alexander Y. Piggott David J. Thomson Robert Wiser I.E. Opris

Dataset to support paper: A universal 3D imaging sensor on a silicon photonics platform, published in Nature. The .zip file contains all the data and code accompanying this dataset. There are three sub-folders in the top-level .zip file for the data corresponding to Figure 3, Figure 4, and the extended data figures of the paper, referred to respectively as figure3, figure4, and extfigs. Each of those folders in turn have two of their own sub-folders called data and plots that hold the corresponding numerical data and image artwork (in both .pdf and .svg format) from the paper as well as Python code in the higher directory that will create the figures from the data.

Python

File format

Code (set theory)

10.5258/soton/d1619

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High performance silicon optical modulators

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2012)

Graham T. Reed David J. Thomson Frédéric Y. Gardes Y. Hu N. Owens

In this work we present results from high performance silicon optical modulators produced within the two largest silicon photonics projects in Europe; UK Silicon Photonics (UKSP) and HELIOS. Two conventional MZI based optical modulators featuring novel self-aligned fabrication processes are presented. The first is based in 400nm overlayer SOI and demonstrates 40Gbit/s modulation with the same extinction ratio for both TE and TM polarisations, which relaxes coupling requirements to the device. The second design is based in 220nm SOI and demonstrates 40Gbits/s modulation with a 10dB extinction ratio as well modulation at 50Gbit/s for the first time. A ring resonator based optical modulator, featuring FIB error correction is presented. 40Gbit/s, 32fJ/bit operation is also shown from this device which has a 6um radius. Further to this slow light enhancement of the modulation effect is demonstrated through the use of both convention photonic crystal structures and corrugated waveguides. Fabricated conventional photonic crystal modulators have shown an enhancement factor of 8 over the fast light case. The corrugated waveguide device shows modulation efficiency down to 0.45V.cm compared to 2.2V.cm in the fast light case. 40Gbit/s modulation is demonstrated with a 3dB modulation depth from this device. Novel photonic crystal based cavity modulators are also demonstrated which offer the potential for low fibre to fibre loss. In this case preliminary modulation results at 1Gbit/s are demonstrated. Ge/SiGe Stark effect devices operating at 1300nm are presented. Finally an integrated transmitter featuring a III-V source and MZI modulator operating at 10Gbit/s is presented.

Extinction ratio

Modulation (music)

10.1117/12.2001296

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Silicon photonics for high data rate applications -INVITED

EPJ Web of Conferences (2020)

David J. Thomson Weiwei Zhang Ke Li Kapil Debnath Shenghao Liu

The high speed conversion of signals between the optical and electrical domains is crucial for many key applications of silicon photonics. Electro-optic modulators integrated with electronic drive amplifiers are typically used to convert an electrical signal to the optical domain. Design of these individual elements is important to achieve high performance, however a true optimisation requires careful co-design of the photonic and electronic components considering the properties of each other. Here we present our recent results in this area together with a MOSCAP type modulator with the potential for high speed, high efficiency and highly linear modulation.

Modulation (music)

10.1051/epjconf/202023801005

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Group IV mid-infrared photonics

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2015)

Goran Z. Mashanovich Miloš Nedeljković Jordi Soler Penadés C. J. Mitchell Ali Z. Khokhar

In this paper we present SOI, suspended Si, and Ge-on-Si photonic platforms and devices for the mid-infrared. We demonstrate low loss strip and slot waveguides in SOI and show efficient strip-slot couplers. A Vernier configuration based on racetrack resonators in SOI has been also investigated. Mid-infrared detection using defect engineered silicon waveguides is reported at the wavelength of 2-2.5 μm. In order to extend transparency of Si waveguides, the bottom oxide cladding needs to be removed. We report a novel suspended Si design based on subwavelength structures that is more robust than previously reported suspended designs. We have fabricated record low loss Ge-on-Si waveguides, as well as several other passive devices in this platform. All optical modulation in Ge is also analyzed.

Cladding (metalworking)

Modulation (music)

Waveguide

10.1117/12.2176219

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Silicijumski optički modulatori za novu generaciju računara i optičkih telekomunikacija

G.Z. Mashanovich Frédéric Y. Gardes David J. Thomson Y. Hu Renzo Loiacono

Optical technology is poised to revolutionise short reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such interconnect is the optical modulator. Although silicon does not have a linear electrooptical effect and modulators in silicon use free carrier modulation, there has been a dramatic improvement of their performance in recent years. Most notably the bandwidth has increased from the MHz to the multi GHz regime in less than a decade. Minimising metrics such as the energy per bit, and device footprint, whilst maximising bandwidth and modulation depth are non trivial demands. All of this must be achieved with acceptable thermal tolerance and optical spectral width, using CMOS compatible fabrication processes. Here we discuss the techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future.

Modulation (music)

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