Dirk J. Hagen

Max Planck Institute of Microstructure Physics

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Maarit Karppinen

Aalto University

Martyn E. Pemble

University College Cork

Ian M. Povey

University College Cork

S. Rushworth

University of Chester

S. Parkin

Max Planck Institute of Microstructure Physics

A. Wouter Maijenburg

Martin Luther University Halle-Wittenberg

Stefan L. Schweizer

Martin Luther University Halle-Wittenberg

T. S. Tripathi

Aalto University

Reiner Creutzburg

Brandenburg University of Applied Sciences

Jacqueline S. Wrench

University of Liverpool

Cooperative Institutions

Max Planck Institute of Microstructure Physics

University College Cork

Martin Luther University Halle-Wittenberg

Tyndall Centre

Luther University

Tyndall National Institute

Max Planck Society

Aalto University

National University of Ireland

Wittenberg University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Application scenarios and usability for modern 360 degree video projection rooms in modern meeting, incentive, conventions, and exhibitions (MICE) industry

Reiner Creutzburg Dirk J. Hagen E Hasche

360-degree image and movie content has gained popularity over the media and the MICE (Meeting, Incentive, Conventions, and Exhibitions) industry in the last few years. There are three main reasons for this development. First, on the one hand, it is the immersive character of this media form, and, on the other hand, the development of recording and presentation technology has made significant progress in terms of resolution and quality. Third, after a decade of dynamic rising, the MICE Industry focuses on a disruptive change for more digital-based solutions. 360-degree panoramas are particularly widespread in VR and AR technology. However, despite the high immersive potential, these forms of presentation have the disadvantage that the users are isolated and have no social contact during the performance. Therefore, efforts have been made to project 360-degree content in specially equipped rooms or planetariums to enable a shared experience for the audience.

Popularity

Presentation (obstetrics)

Degree (music)

10.1117/12.2618848

Cite

Citations (0)

Atomic Layer Deposition of the Conductive Delafossite PtCoO₂

Advanced Materials Interfaces (2022)

Dirk J. Hagen Jiho Yoon Haojie Zhang Bodo Kalkofen Mindaugas Šilinskas

Abstract The first atomic layer deposition process for a ternary oxide is reported, which contains a metal of the platinum group, the delafossite PtCoO 2 . The deposition with the precursors trimethyl‐Pt‐methylcyclopentadienyl, Co‐bis( N ‐ t ‐butyl‐ N ′‐ethylpropanimidamidate), and oxygen plasma results in a process with a nearly constant growth rate and stoichiometric composition over a wide temperature window from 100 to 320 °C. Annealing of the as‐deposited amorphous films in an oxygen atmosphere in a temperature window from 700 to 800 °C leads to the formation of the delafossite phase. Very thin films show a pronounced preferred orientation with the Pt sheets being almost parallel to the substrate surface while arbitrary orientation is observed for thicker films. The conformal coating of narrow trenches highlights the potential of this atomic‐layer‐deposition process. Moreover, heterostructures with magnetic films are fabricated to demonstrate the potential of PtCoO 2 for spintronic applications.

Delafossite

Stoichiometry

10.1002/admi.202200013

Cite

Citations (7)

Atomic/molecular layer deposition of Cu–organic thin films

Dalton Transactions (2018)

Dirk J. Hagen Lukas Mai Anjana Devi Jani Sainio Maarit Karppinen

The gas-phase atomic/molecular layer deposition (ALD/MLD) technique is strongly emerging as a viable approach for fabricating new exciting inorganic–organic hybrid thin-film materials. Here we report new ALD/MLD processes for copper-based hybrid materials based on five different organic precursors.

Deposition

Layer by layer

Atomic layer epitaxy

10.1039/c8dt03735c

Cite

Citations (18)

Island Coalescence during Film Growth: An Underestimated Limitation of Cu ALD

Advanced Materials Interfaces (2017)

Dirk J. Hagen J.P. Connolly Ian M. Povey S. Rushworth Martyn E. Pemble

The processes involved in the low‐temperature (30–60 °C) growth of ultrathin copper films such as those required in complementary metal oxide semiconductor (CMOS) processing are studied using atomic layer deposition (ALD) combined with simple modeling. The ALD growth is performed using the copper precursor Cu(II)‐bisaminoalkoxide CTA‐1 together with a hydrogen plasma. It is found that the growth processes differ significantly between the substrate materials used. On substrates such as Si and TaN, the formation of isolated islands is observed. The coalescence of smaller islands, which were initially formed in very high density on the substrate, is found to be the main reason for this interesting growth mode. The general limitations imposed on the use of ALD as a method for the deposition of ultrathin Cu films resulting from the findings presented here are described.

Coalescence (physics)

Island growth

Deposition

10.1002/admi.201700274

Cite

Citations (21)

Potentials and challenges for mega events: mobile devices usability for virtual reality, augmented reality, and visual effects

Reiner Creutzburg Dirk J. Hagen E Hasche

Due to the rapid technical development of computer and internet technologies, more and more new applications are becoming possible. Virtual Reality (VR), Augmented Reality (AR) is very often realized with technologies from the field of visual effects, for example, through real-time rendering, artificial intelligence, and high-quality 3D assets. As part of the digital transformation, VR and AR have also been developed for the event industry in recent years, especially for mega-events. As a result, the technologies are increasingly being used. However, processing on mobile devices in these qualities, like smartphones, can still be a challenge, but more and more solutions are being described and developed. On the occasion of the planned 300th anniversary of Immanuel Kant's birth in 2024, there are excellent visualization possibilities for AR applications, for example, the creation of 3D models.

10.1117/12.2618822

Cite

Citations (0)

Atomic layer deposition of metals: Precursors and film growth

Applied Physics Reviews (2019)

Dirk J. Hagen Martyn E. Pemble Maarit Karppinen

The coating of complex three-dimensional structures with ultrathin metal films is of great interest for current technical applications, particularly in microelectronics, as well as for basic research on, for example, photonics or spintronics. While atomic layer deposition (ALD) has become a well-established fabrication method for thin oxide films on such geometries, attempts to develop ALD processes for elemental metal films have met with only mixed success. This can be understood by the lack of suitable precursors for many metals, the difficulty in reducing the metal cations to the metallic state, and the nature of metals as such, in particular their tendency to agglomerate to isolated islands. In this review, we will discuss these three challenges in detail for the example of Cu, for which ALD has been studied extensively due to its importance for microelectronic fabrication processes. Moreover, we give a comprehensive overview over metal ALD, ranging from a short summary of the early research on the ALD of the platinoid metals, which has meanwhile become an established technology, to very recent developments that target the ALD of electropositive metals. Finally, we discuss the most important applications of metal ALD.

Microelectronics

Deposition

10.1063/1.5087759

Cite

Citations (80)

Microstructure and optical properties of ultra-thin NiO films grown by atomic layer deposition

Semiconductor Science and Technology (2018)

Dirk J. Hagen T. S. Tripathi Ichiro Terasaki Maarit Karppinen

High-quality ultrathin films of the p-type wide bandgap semiconductor NiO are potentially interesting candidates for a number of frontier applications. Here we have fabricated a series of NiO thin films with a precise thickness control by atomic layer deposition from Ni-bis(2,2,6,6-tetramethyl-3,5-heptanedionate) and O3 precursors. While randomly oriented polycrystalline films were obtained on glass and Si substrates, epitaxial growth was achieved on sapphire, SrTiO3 and MgO single crystals. Optical energy gaps were determined from UV–vis absorption spectra for the films grown on borosilicate glass, and found to decrease with decreasing film thickness. This observation is in contrast to the expected bandgap increase through quantum confinement, but can be explained by an increased Coulomb interaction. Furthermore, NiO films doped with Co, Cu and Mn were deposited. Electrical measurements showed that the doping has a much higher impact on the two-probe resistance than on the resistivity. A likely explanation is a change of the contact resistance by a change of hole density.

Non-blocking I/O

Deposition

10.1088/1361-6641/aae2e9

Cite

Citations (9)

Die Atomlagenabscheidung von Cobaltphosphid zum Zwecke einer effizienten Wasserspaltung

Angewandte Chemie (2020)

Haojie Zhang Dirk J. Hagen Xiaopeng Li Andreas Graff Frank Heyroth

Abstract Wir berichten von der erstmaligen erfolgreichen Herstellung von Übergangsmetallphosphiden (TMP) mittels Atomlagenabscheidung (ALD). Ultradünne Co‐P Filme wurden mit PH 3 ‐Plasma als der Phosphorquelle und einem zusätzlichen H 2 ‐Plasma‐Schritt, der zum Entfernen von überschüssigem P aus den wachsenden Schichten dient, abgeschieden. Der optimierte ALD‐Prozess folgte dem selbstsättigenden Schicht‐für‐Schicht‐Wachstumsverhalten und die abgeschiedenen Co‐P‐Filme zeichneten sich durch hohe Reinheit und Glätte aus. Die mittels ALD abgeschiedenen Co‐P‐Filme zeigten bessere elektrochemische und photoelektrochemische Aktivitäten für die Wasserstoffentwicklungsreaktion als gleichartige Co‐P‐Filme, die mit der traditionellen Postphosphorisierungsmethode hergestellt wurden. Außerdem zeigen wir die Abscheidung in periodische Furchen. Dies demonstriert das breite und vielversprechende Anwendungspotential dieses ALD‐Prozesses für die gleichmäßige Beschichtung komplexer dreidimensionaler (3D) Strukturen mit TMP‐Filmen.

10.1002/ange.202002280

Cite

Citations (2)