Besar Asllani

Supergrid Institute

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Dominique Planson

Laboratoire Ampère

Hervé Morel

Laboratoire Ampère

Luong Viêt Phung

Université Claude Bernard Lyon 1

Pascal Bevilacqua

Université Claude Bernard Lyon 1

Christophe Raynaud

Institut National des Sciences Appliquées de Lyon

Alberto Castellazzi

Kyoto University of Advanced Science

Pierre Brosselard

Université Claude Bernard Lyon 1

Cyril Buttay

Laboratoire Ampère

Cédric Mathieu de Vienne

Supergrid Institute

Pierre Lefranc

Centre National de la Recherche Scientifique

Cooperative Institutions

Laboratoire Ampère

Centre National de la Recherche Scientifique

Institut National des Sciences Appliquées de Lyon

Université Claude Bernard Lyon 1

Supergrid Institute

École Centrale de Lyon

Laboratoire de Génie Électrique de Grenoble

Institut de Microelectrònica de Barcelona

Université Grenoble Alpes

Institut polytechnique de Grenoble

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Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium

HAL (Le Centre pour la Communication Scientifique Directe) (2014)

Besar Asllani Shiqin Niu Patrick Denis Maxime Berthou Dominique Tournier

Ce travail de recherche propose une approche nouvelle de modelisation de diodes Schottky/JBS en carbure de silicium en employant la seule equation de Shockley comme terme generique d'un modele electrique multi-branches. La fonction de Lambert est utilisee pour s'affranchir du caractere implicite de cette equation. In fine, des parametres - dits phenomenologiques - sont determines afin de reconstruire la caracteristique IVT en dessous et au dessus du seuil avec un facteur de qualite convaincant. Deux cas sont traites, celui d'une diode Schottky SiC avec interface en Tungstene stable, et celui de diodes Schottky et JBS avec interface en Nickel issues de procedes de conception/fabrication en cours de developpement. Les resultats obtenus permettent de discuter de la maturite/qualite de l'interface metal/semiconducteur etudiee et des possibles mecanismes de conduction a l'oeuvre. Enfin, le modele phenomenologique presente aussi un interet en terme de simulations electriques.

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10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies (2019)

Besar Asllani Hervé Morel Luong Viêt Phung Dominique Planson

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

PIN diode

Atmospheric temperature range

10.3390/en12234566

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Characterisation and modelling of 4H-SiC Schottky and JBS diode for high voltage applications

HAL (Le Centre pour la Communication Scientifique Directe) (2016)

Besar Asllani

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Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Materials Science in Semiconductor Processing (2019)

Dominique Planson Besar Asllani Luong Viêt Phung Pascal Bevilacqua Hassan Hamad

Wide-bandgap semiconductor

10.1016/j.mssp.2019.01.042

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Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices

HAL (Le Centre pour la Communication Scientifique Directe) (2019)

Camille Sonneville Dominique Planson Luong Viêt Phung Besar Asllani Pascal Bevilacqua

UV Laser is used to generate electron-hole pairs into Wide Band-Gap (WBG) semiconductors (SiC, GaN or Ga2O3). In the space charge region, the electric field drives the collected carriers and a current, so-called Optical Beam induced Current (OBIC), can be measured. The induced current is then directly related to the electrical field in the device. The OBIC, is a non-destructive technique, which has been previously successfully used to characterize High Voltage (HV) SiC devices [1, 2, 3, 4]. In order to fully benefit of the advantages provided by WBG semiconductors materials and to avoid premature breakdown of the high voltage devices, it is mandatory to have efficient peripheral protections such as a MESA, a JTE and JTE rings…The OBIC characterization can help the technology computer-aided design (TCAD) and the device process to optimize the efficiency of the periphery protection by analyzing the electric field distribution in the structure and especially at the junction periphery. In this talk, we will present an in-house testbench called micro-OBIC which will allow us to characterize HV PiN diodes with a micro-meter spatial resolution.

Electron beam-induced current

Wide-bandgap semiconductor

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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Besar Asllani Hervé Morel Dominique Planson Asad Fayyaz Alberto Castellazzi

V _TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous bias state. The subthreshold drain current, also called drain leakage current, is enhanced after a negative gate bias is applied to put the device in OFF-state. This phenomenon affects the static characteristics and might also change the dynamic behaviour of the devices, but such measurements have not yet been reported. This study reports the impact of the Hysteresis on the Short Circuit behaviour of a commercially available SiC MOSFET. A physical interpretation of the measurement is given in order to provide the fundamentals necessary for the evaluation of the reliability of these power devices.

Subthreshold conduction

Hysteresis

Leakage (economics)

Subthreshold slope

10.1109/esars-itec.2018.8607547

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Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors

HAL (Le Centre pour la Communication Scientifique Directe) (2018)

Dominique Planson Luong Viêt Phung Besar Asllani Pascal Bevilacqua Hassan Hamad

Power electronic devices based on wide bandgap (WBG) semiconductors (like silicon carbide (SiC), gallium nitride (GaN), diamond (C) ...) offer better performances when compared to those based on silicon (Si). However, the periphery protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the method. Then, this electro-optical characterization technique is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. Results are mainly focused on SiC devices for the sake of availability. Finally, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. This paper shows also additional results and measurements on GaN and diamond Schottky diodes. Finally, extraction of OBIC signals allows to know some physical features as shown in the last section like ionization coefficients, minority carrier lifetime and local defects in semiconductors.

Wide-bandgap semiconductor

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Avalanche ruggedness of parallel SiC power MOSFETs

Microelectronics Reliability (2018)

Asad Fayyaz Besar Asllani Alberto Castellazzi Michele Riccio Andrea Irace

Power MOSFET

Transient (computer programming)

Avalanche breakdown

10.1016/j.microrel.2018.06.038

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Citations (26)

Caractérisation et modélisation de diodes Schottky et JBS SiC-4H pour des applications haute tension

Besar Asllani

La diode Schottky SiC est un composant qui peut potentiellement remplacer la diode PiN Si dans les applications de puissance. Effectivement, la tenue en tension elevee, la faible resistivite, ainsi que l’independance de la temperature du courant de recouvrement rendent cette diode ideale pour les convertis- seurs de puissance DC/DC. Cependant, face a l’abondance des composants Si sur le marche, la diode Schottky rencontre une certaine reticence. Malgre les nombreuses demonstrations de systemes electroniques de puissance realises, la fiabilite de cette technologie n’arrive pas a convaincre. Cette etude porte sur la caracterisation en regime statique sur une large gamme de temperatures et l’evaluation de la fiabilite en surcharge des diodes Schottky et JBS SiC-4H. La caracterisation en temperature a permis de proposer des modeles de la carac- teristique directe et inverse sur une gamme etendue de temperatures. Les tests en surcharge ont permis de comparer la fiabilite de diodes experimentales et commerciales a fin de montrer la maturite de cette technologie.

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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Besar Asllani Hervé Morel Pascal Bevilacqua Dominique Planson

Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported. The 2.4 mm ² SiC BJT show good static and switching behavior. The current gain is low compared to literature, but several issues have been identified and can be improved. For the first time, the Short-circuit ruggedness of a 10 kV SiC-BJT is reported. These tests show outstanding performance with at least 16 μs withstand time. Several samples have been brought to failure and revealed an outstanding 52.1 J/cm ² of short-circuit critical energy at 32% of breakdown voltage. The failure seems to happen on the top face metallization since the devices failed in blocked mode and the base-emitter terminals shorted. The SiC BJT handles without failing at least 3 times the critical Short-circuit energy of the commercial SiC MOSFETs. In addition, switching performance is much better than that of Si-IGBTs.

Insulated-gate bipolar transistor

10.23919/epe20ecceeurope43536.2020.9215769

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