J.T. Mullins

Kromek (United Kingdom)

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A.W. Brinkman

University of Twente

Arnab Basu

Ramakrishna Mission Vivekananda Educational and Research Institute

K. A. Prior

Cancer Research Horizons

B.C. Cavenett

University of Hull

G. Horsburgh

Heriot-Watt University

Paul D. Brown

University of Nottingham

B.J. Cantwell

Kromek (United Kingdom)

Tsunemasa Taguchi

University of Tsukuba

B. K. Tanner

Durham University

C. J. Humphreys

Queen Mary University of London

Cooperative Institutions

Durham University

University of Cambridge

Heriot-Watt University

University of Manchester

Kromek (United Kingdom)

Imperial College London

University of Oxford

University of Surrey

University of Strathclyde

Centre National de la Recherche Scientifique

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3-D Mapping of Strain and Defects in a ZnSE Epilayer Using a Variable Energy Electron Beam

Materials science forum (1995)

C. Trager‐Cowan Alex Paterson Robert Martin K.P. O’Donnell J.T. Mullins

Strain (injury)

Electron beam-induced current

Strain energy

10.4028/www.scientific.net/msf.182-184.163

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Citations (0)

Growth and Optical Properties of CdS:(Cd, Zn)S Strained Layer Superlattices

Japanese Journal of Applied Physics (1991)

J.T. Mullins Tsunemasa Taguchi Paul D. Brown Yuri Y. Loginov K. Durose

Cubic CdS:CdxZn1-xS strained layer superlattices with x in the region of 0.3 have been grown on GaAs by low pressure metal organic vapour phase epitaxy (MOVPE) and characterised by X-ray diffraction, photoluminesence and optical absorption measurements. Close lattice matching to the GaAs substrates has been achieved and, for short period samples, blue shifted excitonic emission and energy gaps have been observed. It may be, however, that extremely short periods, in the region of a few tens of Å, are necessary in order to obtain acceptable optical quality in this system.

10.1143/jjap.30.l1853

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Citations (22)

Non-linear optical properties of the Cd1−xZnxS:Cd1−yZnyS strained-layer superlattice system

Journal of Crystal Growth (1992)

J.T. Mullins Tsunemasa Taguchi

Square (algebra)

Harmonic

10.1016/0022-0248(92)90801-o

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Citations (12)

Partial pressure monitoring in cadmium telluride vapour growth

Journal of Crystal Growth (1997)

J. Carles J.T. Mullins A.W. Brinkman

Partial pressure

Cadmium telluride photovoltaics

Telluride

10.1016/s0022-0248(97)00022-5

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Citations (20)

Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds

Journal of Electronic Materials (2008)

J.T. Mullins B.J. Cantwell Arnab Basu Quanbo Jiang A. Choubey

Cadmium telluride photovoltaics

Cadmium zinc telluride

Telluride

Crystal (programming language)

10.1007/s11664-008-0442-3

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Citations (13)

Growth by the Multi-tube Physical Vapour Transport method and characterisation of bulk (Cd,Zn)Te

Journal of Crystal Growth (2012)

A. Choubey P. Veeramani A.T.G. Pym J.T. Mullins P.J. Sellin

Crystal (programming language)

Mole fraction

10.1016/j.jcrysgro.2012.03.005

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Citations (13)

Room temperature ZnSe/ZnCdSe bistable self-electro-optic effect device operating at 488 nm

Applied Physics Letters (1993)

S. Y. Wang G. Horsburgh P. Thompson I. Hauksson J.T. Mullins

Optical bistability at room temperature has been observed for the first time in a II-VI semiconductor self-electro-optic effect device fabricated by molecular beam epitaxy. The optical switch is based on a ZnSe/ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.

Bistability

Optical Bistability

Electro-optic effect

Photoconductivity

10.1063/1.109880

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Citations (26)

Ultraviolet laser and photodetector of CdZnS/ZnS multiple quantum wells

Physica B Condensed Matter (1993)

T. Tauchi Yoichi Yamada Takao Ohno J.T. Mullins Yasuaki Masumoto

Ultraviolet

10.1016/0921-4526(93)90187-b

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Citations (15)

X-ray diffraction imaging of ZnTe crystals grown by the multi-tube physical vapour transport technique

Journal of Crystal Growth (2014)

J.T. Mullins F. Dierre B. K. Tanner

Crystal (programming language)

Diffraction topography

Seed crystal

Monochromatic color

10.1016/j.jcrysgro.2014.12.007

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Citations (4)

GaN-InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor

physica status solidi (a) (2002)

E. J. Thrush M. J. Kappers P. Dawson D. M. Graham J. S. Barnard

A Close Coupled Showerhead MOCVD reactor has been used to grow GaN–InGaN quantum well (QW) structures and LEDs using two different growth regimes, one in which the wells are grown at a lower temperature than the barriers and the other in which both are grown at the same temperature. In general the optical quality of single temperature multi-quantum wells (MQWs) are superior to that of structures grown at two temperatures but the latter have been proved easier to optimise for operation at longer wavelengths. Improved emission wavelength uniformity has been noted for the single temperature structures and XRD and low temperature PL measurements of the latter have indicated that high quality structures have been achieved. Time resolved PL has shown that the radiative carrier lifetime increases with the indium content of the quantum wells making longer wavelength structures more susceptible to competition from non-radiative recombination.

Indium gallium nitride

10.1002/1521-396x(200208)192:2<354::aid-pssa354>3.0.co;2-i

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Citations (12)