Armin Buschhausen

Hochschule Düsseldorf University of Applied Sciences

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H. Vogt

University of Duisburg-Essen

Christian Walk

Fraunhofer Institute for Microelectronic Circuits and Systems

Oğuz Doǧan

Kahramanmaraş Sütçü İmam University

W. Mokwa

RWTH Aachen University

Taylan Altan

The Ohio State University

K. J. Weinmann

Michigan Technological University

Joon Y. Lee

University of Pittsburgh Medical Center

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Fraunhofer Institute for Microelectronic Circuits and Systems

Fraunhofer Society

University of Duisburg-Essen

University of Göttingen

Entwicklungszentrum für Schiffstechnik und Transportsysteme

Max Planck Institute for Physics

Pathologie Hamburg-West

Board of the Swiss Federal Institutes of Technology

ETH Zurich

Kyungpook National University

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Development of a Post-CMOS Compatible Nanoporous Thin Film layer Based on Al₂O₃

IOP Conference Series Materials Science and Engineering (2018)

Oğuz Doǧan Armin Buschhausen Christian Walk W. Mokwa H. Vogt

Porous alumina is a popular material with numerous application fields. A post-CMOS compatible process chain for the fabrication of nanoporous surface based on Al2O3 by atomic layer deposition (ALD) is presented. By alternately applying small numbers of ALD cycles for Al2O3 and ZnO, a homogenous composite was accomplished, for which the principle of island growth of ALD materials at few deposition cycle numbers was utilised. By selective texture-etching of ZnO content via hydrofluoric acid (HF) in vaporous phase at 40 °C and 10.67 mbar, a porous surface of the etch resistant Al2O3 could be achieved. TOF-SIMS investigations verified the composition of ALD composite, whereas AFM and high resolution SEM images characterised the topographies of pre- and post-etched samples. Pores with opening diameters of up to 15 nm could be detected on the surface after vaporous HF treatment for 2 minutes. The amount of pores increased after an etching time of 5 minutes.

Hydrofluoric acid

Nanoporous

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10.1088/1757-899x/350/1/012001

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Development of a post-CMOS compatible nanoporous Al2O3 thin film layer

Oğuz Doǧan Armin Buschhausen Christian Walk H. Vogt W. Mokwa

Nanoporous

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