We have grown InAs quantum dots on InP and directly bonded InP/Si substrate using MOVPE where the strain of GaInAsP second cap layer were changed. We have investigated the density, size and optical characteristics dependent on difference of lattice mismatch of strain compensation layer.
We demonstrated the bonding of thin film InP and Si using wafer direct bonding technique, described the heating process of the InP-Si directly attached substrate. The evaluation of the prepared InP-Si substrate by observing the surface state with Nomarski-mode images is better than previous annealing sequence. We have successfully obtained lasing characteristics of GaInAsP MQW LD using this substrate.
We demonstrated the bonding of thin film InP and Si using wafer direct bonding technique, described the heating process of the InP-Si directly attached substrate. The evaluation of the prepared InP-Si substrate by observing the surface state with Nomarski-mode images is better than previous annealing sequence. We have successfully obtained lasing characteristics of GaInAsP MQW LD using this substrate.
Recently, a community microgrid (MG) has been attracted solution for managing a local area energy network. The proposed robust generation schedules are carried out to evaluate the performance of the MG system operation. The authors have already developed the fundamental system operation and planning functions which was named robust supply and demand manager. The effectiveness of the proposed manager is demonstrated for the MG including photovoltaic generations (PVs), battery energy storage systems (BESSs), and electric vehicles (EVs). The approach for mitigating the irregularity associated with the uncertainties of PVs, EVs, and BESSs' behavior is developed in this paper.
We report the successful lasing operation of MQW laser diode with buried heterostructure on the directly bonded InP/Si substrate. Buried heterostructure laser diode was fabricated two step MOVPE growth on silicon substrate.
