C. F. Huang

Tatung University

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Chi‐Te Liang

National Taiwan University

Y. H. Chang

National Tsing Hua University

Da‐Ren Hang

National Sun Yat-sen University

Gil‐Ho Kim

Sungkyunkwan University

D. A. Ritchie

University of Cambridge

Tsai-Yu Huang

Soochow University

H.D. Yeh

National Taiwan University

Soroush Vosoughi

Dartmouth College

H. H. Lin

Duke University

Y.F. Chen

Harvard University

Cooperative Institutions

National Taiwan University

National Yang Ming Chiao Tung University

National Tsing Hua University

Chinese Academy of Sciences

National Cheng Kung University

National Central University

University at Buffalo, State University of New York

National University of Singapore

University of Cambridge

Chiba University

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Probing semiclassical magneto-oscillations in the low-field quantum Hall effect

Physical Review B (2009)

Da‐Ren Hang C. F. Huang K. A. Cheng

The low-field quantum Hall effect is investigated on a two-dimensional electron system in an AlGaAs/GaAs heterostructure. Magneto-oscillations following the semiclassical Shubnikov-de Haas formula are observed even when the emergence of the mobility gap shows the importance of quantum localization effects. Moreover, the Lifshitz-Kosevich formula can survive as the oscillating amplitude becomes large enough for the deviation to the Dingle factor. The crossover from the semiclassical transport to the description of quantum diffusion is discussed. From our study, the difference between the mobility and cyclotron gaps indicates that some electron states away from the Landau-band tails can be responsible for the semiclassical behaviors under low-field Landau quantization.

Semiclassical physics

Landau quantization

Shubnikov–de Haas effect

Bloch oscillations

10.1103/physrevb.80.085312

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Citations (11)

Text Augmentation in a Multi-Task View

Jason Wei C. F. Huang Shiqi Xu Soroush Vosoughi

Traditional data augmentation aims to increase the coverage of the input distribution by generating augmented examples that strongly resemble original samples in an online fashion where augmented examples dominate training. In this paper, we propose an alternative perspective—a multi-task view (MTV) of data augmentation—in which the primary task trains on original examples and the auxiliary task trains on augmented examples. In MTV data augmentation, both original and augmented samples are weighted substantively during training, relaxing the constraint that augmented examples must resemble original data and thereby allowing us to apply stronger augmentation functions. In empirical experiments using four common data augmentation techniques on three benchmark text classification datasets, we find that using the MTV leads to higher and more robust performance than traditional augmentation.

Benchmark (surveying)

Training set

10.18653/v1/2021.eacl-main.252

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Citations (7)

On the low-field insulator-quantum Hall conductor transitions

Physica E Low-dimensional Systems and Nanostructures (2004)

Tsai-Yu Huang J. R. Juang C. F. Huang Gil‐Ho Kim Chao-Ping Huang

Landau quantization

Thermal Hall effect

10.1016/j.physe.2003.11.258

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Citations (15)

An experimental study on Γ(2) modular symmetry in the quantum Hall system with a small spin splitting

Journal of Physics Condensed Matter (2006)

C. F. Huang Y. H. Chang Hao-Tien Cheng Z.P. Yang H.D. Yeh

Magnetic-field-induced phase transitions were studied with a two-dimensional electron AlGaAs/GaAs system. The temperature-driven flow diagram shows features of the Γ(2) modular symmetry, which includes distorted flowlines and a shifted critical point. The deviation of the critical conductivities is attributed to a small but resolved spin splitting, which reduces the symmetry in Landau quantization (Dolan 2000 Phys. Rev. B 62 10278). Universal scaling is found under the reduction of the modular symmetry. It is also shown that the Hall conductivity can still be governed by the scaling law when the semicircle law and the scaling on the longitudinal conductivity are invalid.

Landau quantization

Critical point (mathematics)

10.1088/0953-8984/19/2/026205

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Citations (9)

Transport and Optical Studies of the D--Conduction Band in Doped GaAs/AlGaAs Quantum Wells

Chinese Journal of Physics (2001)

C. H. Lee Y. H. Chang C. F. Huang Meng-Rou Huang H. H. Lin

Quasi Fermi level

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Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction

Applied Physics Letters (2001)

Da‐Ren Hang Chi‐Te Liang C. F. Huang Y. H. Chang Y. F. Chen

We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov–de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185±0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements.

Shubnikov–de Haas effect

Oscillation (cell signaling)

10.1063/1.1380245

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Citations (37)

Experimental studies of low-field Landau quantization in two-dimensional GaAs electron systems

Bulletin of the American Physical Society (2005)

Da‐Ren Hang H.D. Yeh Y.W. Zhang J.-C. Hsiao Huimin Pang

Landau quantization

Shubnikov–de Haas effect

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Half integer features in the quantum Hall Effect: experiment and theory

arXiv (Cornell University) (2008)

Tobias Kramer Eric J. Heller Robert E. Parrott Chi‐Te Liang C. F. Huang

The quantum Hall effect is one of the most important developments in condensed matter physics of the 20th century. The standard explanations of the famous integer quantized Hall plateaus in the transverse resistivity are qualitative, and involve assumptions about disorder, localized states, extended states, edge states, Fermi levels pinned by Landau levels, etc. These standard narratives give plausible reasons for the existence of the plateaus, but provide little in the way of even a qualitative understanding of the shape and width of the Hall plateaus, much less a first principles calculation. The injection model presented in this paper changes that situation. Rather than focusing on the middle of the Hall device, we follow the electrons to their source: one corner of the Hall bar and its steep electric field gradients. We find the entire resistivity curve including the Hall plateaus is calculable as a function of magnetic field, temperature, and current. The new higher current experiments reported here show remarkable half integer features for the first time; these are faithfully reproduced by the injection theory. The Hall plateaus and half integer inflections are shown to result from the local density of states appropriate to the magnetic field and the strong electric field gradient at the injection corner.

Landau quantization

Thermal Hall effect

10.48550/arxiv.0811.3572

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Citations (1)

Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System

arXiv (Cornell University) (2002)

Changkong Liang C. F. Huang Yu-Ming Cheng Tsai-Yu Huang Y. H. Chang

We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $\sigma_{xx}$ and $\sigma_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $\nu=1.5$. The "anomalous" temperature-driven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for $3<\nu<5$, there is a temperature-independent point in $\rho_{xx} (B)$, $\rho_{xy} (B)$, $\sigma_{xx}$, and $\sigma_{xy}$ which corresponds to a boundary of the quantum phase transition.

Sigma

Classical XY model

10.48550/arxiv.cond-mat/0201333

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Landau quantization, Localization, and Insulator-quantum Hall Transition at Low Fields

Bulletin of the American Physical Society (2005)

Tsai-Yu Huang Chi‐Te Liang Gil‐Ho Kim C. F. Huang Chao-Ping Huang

Landau quantization

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